Yogesh Sharma

Multilevel unipolar resistive memory switching in amorphous SmGdO3 thin film

Multilevel resistive switching was observed in random access memory device using amorphous SmGdO3 (SGO) ternary oxide thin films. Non-volatile and stable 4-level resistance states with sufficient margin of resistance ratios were observed by varying compliance current which was attributed to compliance current dependent variation in size of conducting filaments. As fabricated Pt/SGO/Pt devices exhibited excellent switching parameters such as stable resistance ratios of reset (ON) to set (OFF) states, non-overlapping switching voltages, excellent data retention, and endurance. Temperature dependent variation of resistances of ON and OFF states of the device was studied to elucidate current conduction and resistive switching mechanisms.

Unipolar resistive switching behavior of amorphous YCrO3 films for nonvolatile memory applications

Amorphous YCrO3 (YCO) films were prepared on Pt/TiO2/SiO2/Si substrate by pulsed laser deposition in order to investigate resistive switching (RS) phenomenon. The Pt/YCO/Pt device showed stable unipolar RS with resistance ratio of ∼105 between low and high resistance states, excellent endurance and retention characteristics, as well as, non-overlapping switching voltages with narrow dispersions. Based on the x-ray photoelectron spectroscopy and temperature dependent switching characteristics, observed RS was mainly ascribed to the oxygen vacancies. Moreover, current-voltage characteristics of the device in low and high resistance states were described by Ohmic and trap controlled space–charge limited conduction mechanisms, respectively.

Studies of the switchable photovoltaic effect in co-substituted BiFeO3 thin films

We report the photovoltaic properties of doped ferroelectric [Bi0.9La0.1][Fe0.97Ti0.02Zr0.01]O3 (BLFTZO) thin films. Polycrystalline BLFTZO films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition technique. Al-doped ZnO transparent top electrodes complete the ZnO:Al/BLFTZO/Pt metal-ferroelectric-metal capacitor structures. BLFTZO showed switchable photoresponse in both polarities. The open circuit voltage (VOC) and short circuit current (JSC) were found to be ∼0.022 V and ∼650 μA/cm2, respectively after positive poling, whereas significant difference in VOC ∼ 0.018V and JSC ∼ 700 μA/cm2 was observed after negative poling. The observed switchable photocurrent and photovoltage responses are explained on the basis of polarization flipping in BLFTZO due to the applied poling field.

Phonons and magnetic excitation correlations in weak ferromagnetic YCrO3

Here, we report the temperature dependent Raman spectroscopic studies on orthorhombically distorted perovskite YCrO3 over a temperature range of 20–300 K. Temperature dependence of DC-magnetization measurements under field cooled and zero field cooled protocols confirmed a Neel transition at TN ∼ 142 K. Magnetization isotherms recorded at 125 K show a clear loop opening without any magnetization saturation up to 20 kOe, indicating a coexistence of antiferromagnetic (AFM) and weak ferromagnetic (WFM) phases. Estimation of exchange constants using mean-field approximation further confirm the presence of a complex magnetic phase below TN. Temperature evolution of Raman line-shape parameters of the selected modes (associated with the octahedral rotation and A(Y)-shift in the unit-cell) reveal an anomalous phonon shift near TN. An additional phonon anomaly was identified at T* ∼ 60 K, which could possibly be attributed to the change in the spin dynamics. Moreover, the positive and negative shifts in Raman freq...

Ferroelectric photovoltaic properties in doubly substituted (Bi0.9La0.1)(Fe0.97Ta0.03)O3 thin films

Doubly substituted [Bi0.9La0.1][Fe0.97Ta0.03]O3 (BLFTO) films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. The ferroelectric photovoltaic properties of ZnO:Al/BLFTO/Pt thin film capacitor structures were evaluated under white light illumination. The open circuit voltage and short circuit current density were observed to be ∼0.20 V and ∼1.35 mA/cm2, respectively. The band gap of the films was determined to be ∼2.66 eV, slightly less than that of pure BiFeO3 (2.67 eV). The PV properties of BLFTO thin films were also studied for various pairs of planar electrodes in different directions in polycrystalline thin films.

Switchable photovoltaic and polarization modulated rectification in Si-integrated Pt/(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3/LaNiO3 heterostructures

We studied switchable photovoltaic and photo-diode characteristics of Pt/(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3/ LaNiO3 (Pt/BSFHO/LNO) heterostructures integrated on Si (100). The directions of photocurrent (JSC) and rectification are found to be reversibly switchable after applying external poling voltages. In pristine state, metal-ferroelectric-metal capacitor Pt/BSFHO/LNO shows JSC ∼ 32 μA/cm2 and VOC ∼ 0.04 V, which increase to maximum value of JSC  ∼  303 (−206) μA/cm2 and VOC ∼ −0.32 (0.26) V after upward (downward) poling at ±8 V. We believe that Schottky barrier modulation by polarization flipping at Pt/BSFHO interface could be a main driving force behind switchable photovoltaic and rectifying diode characteristics of Pt/BSFHO/LNO heterostructures.

Photovoltaic effect and enhanced magnetization in 0.9(BiFeO3)–0.1(YCrO3) composite thin film fabricated using sequential pulsed laser deposition

We report on the photovoltaic effect and multiferroic properties of a 0.9(BiFeO3)–0.1(YCrO3) composite thin film deposited on a Pt/TiO2/SiO2/Si substrate by sequential ablation of BiFeO3 and YCrO3 ceramic targets using pulsed laser deposition. The desired composition of the composite was achieved by controlling the ablation time of respective targets. As confirmed by the x-ray diffraction pattern the resultant film was found to be polycrystalline in nature and composed of a mixture of both rhombohedral BiFeO3 and orthorhombic YCrO3 phases. Interesting multiferroic properties in terms of an enhanced saturation magnetization of ~14 emu cm−3 and the remnant polarization of ~4.5 µC cm−2 were observed where the enhancement in magnetization as compared to pristine BiFeO3 could be attributed to the super-exchange interaction between Fe and Cr-ions. The photovoltaic properties of the composite thin film were studied under white light illumination in both top–bottom and lateral electrode configurations. Short circuit current densities (JSC) = 1.48 µA cm−2 and 0.44 µA cm−2, and open circuit voltages (VOC) = 0.51 V and 0.32 V were observed in top–bottom and lateral electrode configurations, respectively.

Nonpolar resistive memory switching with all four possible resistive switching modes in amorphous LaHoO3 thin films

We studied the resistive memory switching in pulsed laser deposited amorphous LaHoO3 (a-LHO) thin films for non-volatile resistive random access memory applications. Nonpolar resistive switching (RS) was achieved in Pt/a-LHO/Pt memory cells with all four possible RS modes (i.e., positive unipolar, positive bipolar, negative unipolar, and negative bipolar) having high RON/ROFF ratios (in the range of ∼104–105) and non-overlapping switching voltages (set voltage, VON ∼ ±3.6–4.2 V and reset voltage, VOFF ∼ ±1.3–1.6 V) with a small variation of about ±5–8%. Temperature dependent current-voltage (I–V) characteristics indicated the metallic conduction in low resistance states (LRS). We believe that the formation (set) and rupture (reset) of mixed conducting filaments formed out of oxygen vacancies and metallic Ho atoms could be responsible for the change in the resistance states of the memory cell. Detailed analysis of I–V characteristics further corroborated the formation of conductive nanofilaments based on metal-like (Ohmic) conduction in LRS. Simmons-Schottky emission was found to be the dominant charge transport mechanism in the high resistance state.

Unipolar resistive switching in planar Pt/BiFeO3/Pt structure

We report unipolar resistive switching suitable for nonvolatile memory applications in polycrystalline BiFeO3 thin films in planar electrode configuration with non-overlapping Set and Reset voltages, On/Off resistance ratio of ∼104 and good data retention (verified for up to 3,000 s). We have also observed photovoltaic response in both high and low resistance states, where the photocurrent density was about three orders of magnitude higher in the low resistance state as compared to the high resistance state at an illumination power density of ∼100 mW/cm2. Resistive switching mechanisms in both resistance states of the planar device can be explained by using the conduction filament (thermo-chemical) model.

Structural phase transition of ternary dielectric SmGdO3: Evidence from angle dispersive x-ray diffraction and Raman spectroscopic studies

High-pressure synchrotron based angle dispersive x-ray diffraction (ADXRD) studies were carried out on SmGdO3 (SGO) up to 25.7 GPa at room temperature. ADXRD results indicated a reversible pressure-induced phase transition from ambient monoclinic to hexagonal phase at ∼8.9 GPa. The observed pressure-volume data were fitted with the third order Birch-Murnaghan equation of state yielding zero pressure bulk modulus B0 = 132(22) and 177(9) GPa for monoclinic (B-type) and hexagonal (A-type) phases, respectively. Pressure dependent micro-Raman spectroscopy further confirmed the monoclinic to hexagonal phase transition at about 5.24 GPa. The mode Gruneisen parameters and pressure coefficients for different Raman modes corresponding to each individual phases of SGO were calculated using pressure dependent Raman mode analysis.