Yoonyoung Chung

Linearly and Highly Pressure-Sensitive Electronic Skin Based on a Bioinspired Hierarchical Structural Array.

Pressure-sensitive electronic skin composed of a hierarchical structural array exhibits outstanding linear and high sensitivity in the pressure range exerted by gentle touch. By virtue of monolayer graphene acting as electrode material, this device can be operated with low voltage. Especially, its high transparency enables an accurate placement of the device on the target position when it is used for health monitoring.

Enhancing 2D growth of organic semiconductor thin films with macroporous structures via a small-molecule heterointerface

The physical structure of an organic solid is strongly affected by the surface of the underlying substrate. Controlling this interface is an important issue to improve device performance in the organic electronics community. Here we report an approach that utilizes an organic heterointerface to improve the crystallinity and control the morphology of an organic thin film. Pentacene is used as an active layer above, and m-bis(triphenylsilyl)benzene is used as the bottom layer. Sequential evaporations of these materials result in extraordinary morphology with far fewer grain boundaries and myriad nanometre-sized pores. These peculiar structures are formed by difference in molecular interactions between the organic layers and the substrate surface. The pentacene film exhibits high mobility up to 6.3 cm(2) V(-1) s(-1), and the pore-rich structure improves the sensitivity of organic-transistor-based chemical sensors. Our approach opens a new way for the fabrication of nanostructured semiconducting layers towards high-performance organic electronics.

Controlling Electric Dipoles in Nanodielectrics and Its Applications for Enabling Air-Stable n-Channel Organic Transistors

We present a new method to manipulate the channel charge density of field-effect transistors using dipole-generating self-assembled monolayers (SAMs) with different anchor groups. Our approach maintains an ideal interface between the dipole layers and the semiconductor while changing the built-in electric potential by 0.41-0.50 V. This potential difference can be used to change effectively the electrical properties of nanoelectronic devices. We further demonstrate the application of the SAM dipoles to enable air-stable operation of n-channel organic transistors.

Water‐Free Transfer Method for CVD‐Grown Graphene and Its Application to Flexible Air‐Stable Graphene Transistors

Transferring graphene without water enables water-sensitive substrates to be used in graphene electronics. A polymeric bilayer (PMMA/PBU) is coated on graphene as a supporting layer for the water-free transfer process and as an excellent passivation layer that enhances device operation.

Low-voltage and short-channel pentacene field-effect transistors with top-contact geometry using parylene-C shadow masks

We have fabricated high-performance top-contact pentacene field-effect transistors using a nanometer-scale gate dielectric and parylene-C shadow masks. The high-capacitance gate dielectric, deposited by atomic layer deposition of aluminum oxide, resulted in a low operating voltage of 2.5 V. The flexible and conformal parylene-C shadow masks allowed fabrication of transistors with channel lengths of L=5, 10, and 20 μm. The field-effect mobility of the transistors was μ=1.14 (±0.08) cm2/V s on average, and the IMAX/IMIN ratio was greater than 106.

Engineering the metal gate electrode for controlling the threshold voltage of organic transistors

For practical applications of organic field-effect transistors (OFETs), the control of threshold voltage (VTH) is important as different circuits require different electrical characteristics. Here, we demonstrate two types of gate electrode structures to achieve this control, namely, via dual-metal gates and bilayer metal gates. The first approach uses different metallic materials, titanium, and platinum, while the second approach uses different thicknesses in a metal bilayer composed of aluminum and platinum. Our results show that the VTH is varied by more than 20% of the supply voltage without affecting the field-effect mobility values for both pentacene p-channel and C60 n-channel OFETs.

Ubiquitous Graphene Electronics on Scotch Tape

We report a novel concept of graphene transistors on Scotch tape for use in ubiquitous electronic systems. Unlike common plastic substrates such as polyimide and polyethylene terephthalate, the Scotch tape substrate is easily attached onto various objects such as banknotes, curved surfaces, and human skin, which implies potential applications wherein electronics can be placed in any desired position. Furthermore, the soft Scotch tape serves as an attractive substrate for flexible/foldable electronics that can be significantly bent, or even crumpled. We found that the adhesive layer of the tape with a relatively low shear modulus relaxes the strain when subjected to bending. The capacitance of the gate dielectric made of oxidized aluminum oxide was 1.5 μF cm−2, so that a supply voltage of only 2.5 V was sufficient to operate the devices. As-fabricated graphene transistors on Scotch tape exhibited high electron mobility of 1326 (±155) cm2 V−1 s−1; the transistors still showed high mobility of 1254 (±478) cm2 V−1 s−1 even after they were crumpled.