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Dive into the research topics where Yoshihiro Tsukahara is active.

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Featured researches published by Yoshihiro Tsukahara.


international microwave symposium | 2011

A 67% PAE, 100 W GaN power amplifier with on-chip harmonic tuning circuits for C-band space applications

Shinichi Miwa; Yoshitaka Kamo; Yoshinori Kittaka; Takashi Yamasaki; Yoshihiro Tsukahara; Toshihiko Tanii; Masaki Kohno; Seiki Goto; Akihiro Shima

This paper describes a high efficiency and high output power GaN power amplifier for C-band space applications. The amplifier uses on-chip harmonic tuned FETs to improve dc-to-rf conversion efficiency. A 2nd harmonic input tuning circuit is incorporated into each unit on-chip FET cell and realizes high precise control of 2nd harmonic input impedance. In addition, 2nd and 3rd harmonic output impedances are optimized with external output matching circuits. A 100 W power amplifier with 4-chips achieves a 67.0% PAE (72.4% drain efficiency) at 3.7 GHz under CW operating conditions. To the best of our knowledge, this is the highest efficiency of C-band power amplifiers ever reported with over 100 W output power.


international microwave symposium | 2008

60GHz High Isolation SPDT MMIC switches using shunt pHEMT resonator

Yoshihiro Tsukahara; Hirotaka Amasuga; Seiki Goto; Tomoki Oku; Takahide Ishikawa

This paper describes the successful development of a 60GHz high isolation SPDT MMIC switch for wireless applications. In order to improve the isolation, the shunt pHEMT resonator, which is reduced on-state resistance of FET, is proposed. The developed V-band SPDT switch shows an isolation of over 45 dB and an insertion loss of 1.4 dB at 60 GHz. Input and output return losses are better than 18 dB in ON-state. Moreover, the switch requires no complex off-chip bias circuitry and consumes no DC power. These performances of high isolation and low insertion loss presented here are the best among the V-band pHEMT MMIC switches.


international microwave symposium | 2001

A compact T/R switching circuit using quadrature couplers and drain-driven HPAs

Hiromitsu Uchida; Masatoshi Nii; Yoshihiro Tsukahara; Moriyasu Miyazaki; Yasushi Itoh

A novel T/R switching circuit is proposed for microwave T/R modules. It consists of balanced high-power amplifiers with quadrature couplers, and a low-noise amplifier which is connected to the isolation port of the coupler. In RX-mode, the HPAs are switched off by controlling drain voltage of FETs. A prototype C- to Ku-band T/R switching circuit has been fabricated, and the validity of the switching method has been confirmed experimentally.


Archive | 2009

VOLTAGE CONTROLLED OSCILLATOR, MMIC, AND HIGH FREQUENCY WIRELESS DEVICE

Shinsuke Watanabe; Seiki Goto; Yoshihiro Tsukahara; Ko Kanaya


Archive | 2010

Semiconductor switch, transceiver, transmitter, and receiver

Yoshihiro Tsukahara


Archive | 2012

POWER AMPLIFIER AND MMIC USING THE SAME

Yoshihiro Tsukahara


Archive | 2012

Switch circuit having improved RF power characteristics

Yoshihiro Tsukahara


Archive | 2010

HIGH FREQUENCY SECOND HARMONIC OSCILLATOR

Shinsuke Watanabe; Yoshihiro Tsukahara; Ko Kanaya; Shinichi Miwa


Archive | 2002

Matching circuit and semiconductor device

Takao Ishida; Yoshihiro Tsukahara


Archive | 2015

INDUCTOR AND MMIC

Yoshihiro Tsukahara

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Yasushi Itoh

Shonan Institute of Technology

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