Yoshihito Kobayashi

High performance mask fabrication process for the next-generation mask production

ArF immersion lithography combined with double patterning has been used for fabricating below half pitch 40nm devices. However, when pattern size shrinks below 20nm, we must use new technology like quadruple patterning process or next generation lithography (NGL) solutions. Moreover, with change in lithography tool, next generation mask production will be needed. According to ITRS 2013, fabrication of finer patterns less than 15nm will be required on mask plate in NGL mask production 5 years later [1]. In order to fabricate finer patterns on mask, higher resolution EB mask writer and high performance fabrication process will be required. In a previous study, we investigated a potential of mask fabrication process for finer patterning and achieved 17nm dense line pattern on mask plate by using VSB (Variable Shaped Beam) type EB mask writer and chemically amplified resist [2][3]. After a further investigation, we constructed higher performance mask process by using new EB mask writer EBM9000. EBM9000 is the equipment supporting hp16nm generations photomask production and has high accuracy and high throughput. As a result, we achieved 15.5nm pattern on mask with high productivity. Moreover, from evaluation of isolated pattern, we proved that current mask process has the capability for sub-10nm pattern. These results show that the performance of current mask fabrication process have the potential to fabricate the next-generation mask.

Potential of mask production process for finer pattern fabrication

Photomask used for optical lithography has been developed for purpose of fabrication a pattern along with finer designed rules and increase the productivity. With regard to pattern fabrication on mask, EB (Electron beam) mask writer has been used because it has high resolution beam. But in producing photomask, minimum pattern size on mask is hits a peak around 40nm by the resolution limit of ArF immersion systems. This value is easy to achieve by current EB writer. So, photomask process with EB writer has gotten attached to increase turnaround time. In next generation lithography such as EUV (Extreme ultraviolet) lithography and Nano-imprint lithography, it is enable to fabricate finer pattern beyond the resolution limit of ArF immersion systems. Thereby the pattern on a mask becomes finer rapidly. According to ITRS 2012, fabrication of finer patterns less than 20nm will be required on EUV mask and on NIL template. Especially in NIL template, less than 15nm pattern will be required half a decade later. But today’s development of EB writer is aiming to increase photomask’s productivity, so we will face a difficulty to fabricate finer pattern in near future. In this paper, we examined a potential of mask production process with EB writer from the view of finer pattern fabrication performances. We succeeded to fabricate hp (half-pitch) 17nm pattern on mask plate by using VSB (Variable Shaped Beam) type EB mask writer with CAR (Chemically Amplified Resist). This result suggests that the photomask fabrication process has the potential for sub-20nm generation mask production.