Yoshiko Kokawa

Semiconductor device having a two layered structure gate electrode

Semiconductor device having a gate electrode of polycrystal layer and a method of manufacturing thereof

Semiconductor substrate for bipolar element

Method of making a semiconductor substrate having gettering effect

HALBLEITEREINRICHTUNG UND VERFAHREN ZU DEREN HERSTELLUNG

Method of manufacturing semiconductor device having a two layered structure gate electrode

Semiconductor device for use in MOS transistor mfr. - comprising polycrystalline silicon gate electrode with defined crystal orientation, semiconductor substrate and pair of impurity regions

Semiconductor substrate with getter effect - comprises substrate having polycrystalline silicon layer and silicon nitride layer

Halbleitersubstrat mit Gettereffekt und Verfahren zur Herstellung desselben The same semiconductor substrate with getter and methods for preparing

Halbleitersubstrat mit Gettereffekt und Verfahren zur Herstellung desselben