Yoshioki Hajimoto

Electron paramagnetic resonance study on the annealing behavior of vacuum deposited amorphous silicon on crystalline silicon

Structure of amorphous silicon (a‐Si) vacuum deposited on single‐crystal (100) silicon (c‐Si) with and without clean surfaces achieved by ion sputtering and annealing has been examined by using electron paramagnetic resonance (EPR) and transmission electron microscopy (TEM) as a function of annealing temperature. Annealing behavior of EPR signal can be explained well on the basis of TEM observation that there are void networks in a‐Si film deposited on c‐Si with native oxide but no such structure in a‐Si film on c‐Si with clean surface. Structure of a‐Si, where solid phase epitaxial growth occurs at a high rate, is compared with that of ion bombarded a‐Si.

Photodepression in As–S thin films

A small depression (about 80 A) was observed when As–S thin films were exposed to a xenon 500‐W lamp. The depression is considered to be a structural change in amorphous As–S.

The photodoping sensitivity in As‐S and Ge‐S films

Photodoping sensitivity differs greatly between As‐S and Ge‐S films. This difference depends on the degree of phase separation and on the degree of crystallization of the films.