Young Ho Do

Large in-plane permittivity of Ba0.6Sr0.4TiO3 thin films crystallized using excimer laser annealing at 300 °C

We demonstrated a way to fabricate the crystalline Ba0.6Sr0.4TiO3 (BST) thin films using excimer laser annealing technique on the amorphous BST thin films fabricated by sol-gel process. The grain size of the laser-annealed films is larger than that of the conventionally thermal-annealed films. However, an uncrystallized, amorphous layer was observed near the film/substrate interface due to the limited laser absorption depth. The uncrystallized layer has a critical influence on out-of-plane dielectric property of BST films. The significant difference of the relative dielectric permittivity (er) between in-plane (1383) and out-of-plane (184) directions is observed.

Fabrication of 1 μm Thickness Lead Zirconium Titanate Films Using Poly(N-vinylpyrrolidone) Added Sol-gel Method

Copyright 2011 KIEEME. All rights reserved. This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted noncommercial use, distribution, and reproduction in any medium, provided the original work is properly cited. Fabrication of 1 μm Thickness Lead Zirconium Titanate Films Using Poly(N-vinylpyrrolidone) Added Sol-gel Method

Electrical Characteristics of

The single-layer 400 μm × 200 μm sized Ba_0.6Sr_0.4TiO₃ thin-film embedded chip capacitors with two external electrodes fabricated on the surface of the chip capacitors have been demonstrated. The structure of the external electrodes placed on the same surface allows the reduction of connection length, resulting in low parasitic loss and noise of elecronic devices. The fabricated chip capacitors exhibited excellent electrical properties such as high capacitance density and dielectric constant (1687 nF/cm² and 452) and a low dielectric loss of 0.052 at 1 kHz, respectively. In addition, the chip capacitors exhibited the superior temperature stability of X5R (Δ<i>C</i>/<i>C</i> = ±15% at -55^°C to +85^°C) characteristics. Such a low leakage current density of ~ 0.15 μA/cm² at 3 V and a high breakdown voltage of 19.75 V were obtained as well. In conclusion, the chip capacitors are suggested as a candidate for the applications of embedded passive components.