Youngsin Park

Cell reprogramming into the pluripotent state using graphene based substrates

Graphene has been attracting considerable interest in the field of biomedical engineering because graphene and its derivatives are considered to be ideal platforms for supporting cell growth and differentiation. Here we report that graphene promotes the reprogramming of mouse somatic fibroblasts into induced pluripotent stem cells (iPSCs). We constructed a layer of graphene film on a glass substrate and characterized it as a monolayer using Raman spectroscopy. We found that the graphene substrate significantly improved cellular reprogramming efficiency by inducing mesenchymal-to-epithelial-transition (MET) which is known to affect H3K4me3 levels. Thus, our results reveal that a graphene substrate directly regulates dynamic epigenetic changes associated with reprogramming, providing an efficient tool for epigenetic pluripotent reprogramming.

Surface-Effect-Induced Optical Bandgap Shrinkage in GaN Nanotubes.

We investigate nontrivial surface effects on the optical properties of self-assembled crystalline GaN nanotubes grown on Si substrates. The excitonic emission is observed to redshift by ∼100 meV with respect to that of bulk GaN. We find that the conduction band edge is mainly dominated by surface atoms, and that a larger number of surface atoms for the tube is likely to increase the bandwidth, thus reducing the optical bandgap. The experimental findings can have important impacts in the understanding of the role of surfaces in nanostructured semiconductors with an enhanced surface/volume ratio.

Graphene and Graphene Analogs toward Optical, Electronic, Spintronic, Green-Chemical, Energy-Material, Sensing, and Medical Applications

This spotlight discusses intriguing properties and diverse applications of graphene (Gr) and Gr analogs. Gr has brought us two-dimensional (2D) chemistry with its exotic 2D features of density of states. Yet, some of the 2D or 2D-like features can be seen on surfaces and at interfaces of bulk materials. The substrate on Gr and functionalization of Gr (including metal decoration, intercalation, doping, and hybridization) modify the unique 2D features of Gr. Despite abundant literature on physical properties and well-known applications of Gr, spotlight works based on the conceptual understanding of the 2D physical and chemical nature of Gr toward vast-ranging applications are hardly found. Here we focus on applications of Gr, based on conceptual understanding of 2D phenomena toward 2D chemistry. Thus, 2D features, defects, edges, and substrate effects of Gr are discussed first. Then, to pattern Gr electronic circuits, insight into differentiating conducting and nonconducting regions is introduced. By utilizing the unique ballistic electron transport properties and edge spin states of Gr, Gr nanoribbons (GNRs) are exploited for the design of ultrasensitive molecular sensing electronic devices (including molecular fingerprinting) and spintronic devices. The highly stable nature of Gr can be utilized for protection of corrosive metals, moisture-sensitive perovskite solar cells, and highly environment-susceptible topological insulators (TIs). Gr analogs have become new types of 2D materials having novel features such as half-metals, TIs, and nonlinear optical properties. The key insights into the functionalized Gr hybrid materials lead to the applications for not only energy storage and electrochemical catalysis, green chemistry, and electronic/spintronic devices but also biosensing and medical applications. All these topics are discussed here with the focus on conceptual understanding. Further possible applications of Gr, GNRs, and Gr analogs are also addressed in a section on outlook and future challenges.

Correlation between lateral size and gas sensing performance of MoSe2 nanosheets

We demonstrate a facile synthetic method to prepare lateral size controlled molybdenum diselenide (MoSe2) nanosheets using liquid phase exfoliated few-layer MoSe2 nanosheets as a starting material. By precisely controlling the centrifugation condition, preparation of MoSe2 nanosheets with a narrow size distribution ranging from several hundred nanometers to several micrometers could be realized. The accurate size control of MoSe2 nanosheets offers us a great opportunity to examine the size dependent sensing properties. The sensing test results demonstrate that the MoSe2 nanosheets provide competitive advantages compared with conventional graphene based sensors. A tradeoff phenomenon on sensing response and recovery as the lateral size of MoSe2 nanosheets varies is observed. First principles calculations reveal that the ratio of edge-surface sites is responsible for this phenomenon. The correlation between the lateral size and gas sensing performance of MoSe2 nanosheets is established.

Hydrogen physisorption based on the dissociative hydrogen chemisorption at the sulphur vacancy of MoS 2 surface

We provide a new insight that the sulphur-depleted MoS2 surface can store hydrogen gas at room temperature. Our findings reveal that the sulphur-vacancy defects preferentially serve as active sites for both hydrogen chemisorption and physisorption. Unexpectedly the sulphur vacancy instantly dissociates the H2 molecules and strongly binds the split hydrogen at the exposed Mo atoms. Thereon the additional H2 molecule is adsorbed with enabling more hydrogen physisorption on the top sites around the sulphur vacancy. Furthermore, the increase of the sulphur vacancy on the MoS2 surface further activates the dissociative hydrogen chemisorption than the H2 physisorption.

Two-Dimensional Excitonic Photoluminescence in Graphene on a Cu Surface

Despite having outstanding electrical properties, graphene is unsuitable for optical devices because of its zero band gap. Here, we report two-dimensional excitonic photoluminescence (PL) from graphene grown on a Cu(111) surface, which shows an unexpected and remarkably sharp strong emission near 3.16 eV (full width at half-maximum ≤3 meV) and multiple emissions around 3.18 eV. As temperature increases, these emissions blue shift, displaying the characteristic negative thermal coefficient of graphene. The observed PL originates from the significantly suppressed dispersion of excited electrons in graphene caused by hybridization of graphene π and Cu d orbitals of the first and second Cu layers at a shifted saddle point 0.525(M+K) of the Brillouin zone. This finding provides a pathway to engineering optoelectronic graphene devices, while maintaining the outstanding electrical properties of graphene.

Carrier trapping and confinement in Ge nanocrystals surrounded by Ge3N4

We investigated the optical properties of Ge nanocrystals surrounded by Ge3N4. The broad emission ranging from infrared to blue is due to the dependence on the crystal size and preparation methods. Here, we report high resolution Photoluminescence (PL) attributed to emission from individual Ge nanocrystals (nc-Ge) spatially resolved using micro-photoluminescence and detailed using temperature and power-dependent photoluminescence studies. The measured peaks are shown to behave with excitonic characteristics and we argue that the spread of the nc-Ge peaks in the PL spectrum is due to different confinement energies arising from the variation in size of the nanocrystals.

Investigation of electron irradiation-induced magnetism in layered MoS2 single crystals

By using higher acceleration energies than the displacement energy of Mo atoms, the electron irradiation on the layered MoS2 single crystals is found to be an effective and simple method to induce the diamagnetic to ferromagnetic phase transition persisting up to room temperature. The easy axis can be controllable by regulating the electron dose and the acceleration energy. The ferromagnetic states are largely attributed to the strain around the vacancies.

Electron beam-formed ferromagnetic defects on MoS2 surface along 1 T phase transition.

1 T phase incorporation into 2H-MoS2 via an optimal electron irradiation leads to induce a weak ferromagnetic state at room temperature, together with the improved transport property. In addition to the 1T-like defects, the electron irradiation on the cleaved MoS2 surface forms the concentric circle-type defects that are caused by the 2 H/1 T phase transition and the vacancies of the nearby S atoms of the Mo atoms. The electron irradiation-reduced bandgap is promising in vanishing the Schottky barrier to attaining spintronics device. The simple method to control and improve the magnetic and electrical properties on the MoS2 surface provides suitable ways for the low-dimensional device applications.

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods

We have investigated the emission from InGaN/GaN quantum disks grown on the tip of GaN nanorods. The emission at 3.21 eV from the InGaN quantum disk doesn’t show a Stark shift, and it is linearly polarized when excited perpendicular to the growth direction. The degree of linear polarization is about 39.3% due to the anisotropy of the nanostructures. In order to characterize a single nanostructure, the quantum disks were dispersed on a SiO2 substrate patterned with a metal reference grid. By rotating the excitation polarization angle from parallel to perpendicular relative to the nanorods, the variation of overall PL for the 3.21 eV peak was recorded and it clearly showed the degree of linear polarization (DLP) of 51.5%.