Youxian Wen

Fundamental solutions for real-time optical CD metrology

We have developed fast numerical solutions to the diffraction of light from periodic array structures that allow real-time regression fitting to optical data. In contrast to previous publications, the solutions we have developed are easily applied to focused beams with arbitrary angles of incidence on periodic structures with complex shapes and multiple layers both within and below the structure. The adaptive nature of the shape definition makes it relatively easy to characterize typical microelectronic patterning effects, including undercut, rounding, footing and encroachment in a robust manner on poly-gate, STI, Damascene and resist structures. This real-time approach is not limited by a priori knowledge or assumptions about the range of variation of the CD parameters, and is therefore able to deal with large excursions in process parameters. It is also not limited by parameter discretization effects. The program itself is easily configured for any type of optical measurement (ellipsometry, reflectometry, etc). Data will be presented for several categories of microelectronic CD structures that have been measured with this approach.

Contact hole inspection by real-time optical CD metrology

We have developed fast numerical solutions to the diffraction of light from a periodic array of contact holes (CH) in microelectronic structures. We present results for contact holes in oxide and in 193 nm and 248 nm photoresists. We also show detectability limits of the CH and observed variations across wafers processed with state-of-the-art lithography.

Application of scatterometry for evaluation of lithographic process and OPC model generation

Evaluation and qualification of lithographic exposure tools is a crucial step in establishing high volume manufacturing processes for IC manufacturers. The data sampling offered by scatterometry can be as dense as that from ECD (electrical CD) for the qualification of the tool. In this paper, the CDs obtained from scatterometry measurements are compared with those obtained by ECD (electrical CD) measurements to show the cross-slit and cross-scan tool characteristics. Since scatterometry is still an order of magnitude slower than ECD, data from various sampling plans will be compared. Another important consideration of this study is to use scatterometry to generate OPC (optical proximity correction) models for the 45nm and 32nm nodes. An accurate measurement of the process to fit the model becomes very crucial in the very deep sub-micron regime. Currently, SEM measurements are performed but they are slow and their precision is not adequate. In this paper, scatterometry measured data will also be compared with SEM data for OPC model fit.

Performance of measuring contact holes using the Opti-Probe 7341 3-D RT/CD technology

Spectra of contact hole arrays with target diameters ranging from 106 to 131 nm and pattern pitch ranging from 220 to 300 nm are taken from an off-axis (65°) rotating compensator spectroscopic ellipsometry (RCSE).[1] 3-dimensional finite difference (FD3D) model developed by H. Chu,[2] is applied in the studies. To ensure accuracy of optical dispersion of each film, the simultaneous use of angle resolved beam profile reflectometry (BPR), broadband spectroscopic reflectometry (BB), and SE of an Opti-Probe 7341 are used for characterizing of the resist and BARC films. In particular, The extracted n&k dispersions are used to model the contact hole SE data using Therma-Waves proprietary 3-dimensional RT/CD technology.[3,4] The performance of stability of both static and dynamic repeatability, uniformity, and correlation to other independent technology (i.e., SEM) will be presented in this paper.

CD variation control based on accurate characterization of 193-nm material and CD metrology

Shrinkage of device dimensions requires tighter lithography process control. Current levels of Process Control leave less than 0.5 nm budget for CD metrology. An accurate and stable metrology solution requires measurement of CD and profile that are critically dependent on thin film material characterization at various earlier process stages. Opti-Probe integrates five different technologies into a single platform to accurately characterize optical properties of 193 nm materials. Real-time CD (RT/CD) technology utilizes four independent spectra collected from the samples using a rotating-compensator spectroscopic ellipsometer (RCSE) and analyzes the spectra with an innovative numerical solution-finding approach to construct detailed CD and profile of printed features in a 2- and 3 Dimensional geometries. The study presents a comparison of: i) Methodologies using an advanced combination of metrology techniques to characterize 193 nm materials (e.g. ARC). ii) Measured CD and profile variations using RCSE of Opti-Probe and RT/CD technology. iii) Correlation between measured CD variation and measured material characteristics. In order to achieve less than 0.3 nm accuracy and stability requirement for sub 65 nm process development and CD uniformity control, less than 0.003 variation and accuracy in optical dispersion (n&k) of critical material has to be ensured.

Contact hole application for lithography process development using the Opti-Probe three-dimensional RT/CD technology

This paper presents measurement results of the 3-D contact hole profiles using RT/CD technology for various diameter-to-space (D/S) ratios and film stacks. The key controlling parameters (hole depth, diameter, sidewall angle, and hole openness, etc.) for lithography processing of contacts and vias were studied in terms of measurement sensitivity on samples with different pitches and D/S ratios and film stacks. Good correlation (R2 ~ 0.99) between CD-SEM and RT/CD was obtained for the sample structures. The static and dynamic measurement stability of contact diameter and contact depth was better than 1 nm using simple profile modeling.