Yu-Jung Cha

Influence of the Thermal Conductivity of Thermally Conductive Plastics on the Thermal Distribution of an Light-Emitting Diode Headlight for Vehicles

This paper investigates the thermal distribution of an LED headlight for vehicles based on the thermal conductivity of thermally conductive plastics (TCP). In general, heat dissipation structures used for LED headlights are made from metallic materials. However, headlight structures made from TCP have not been investigated. The headlights made from TCP having a various thermal conductivity were fabricated by injection molding with and without a metal plate insert. The temperature characteristics were compared and analyzed using thermal simulations and measurement. The inserted metal in TCP greatly reduced the temperature at solder point, indicating that the fast heat dissipation from the high power LED package to TCP though the inserted metal is essential. The measured temperature at solder points decreased as the thermal conductivity of TCP increased, which is well matched to the simulation results. The measured temperature at the solder point was lower than 150 °C when the thermal conductivity of the TCP was 10 W/mK.

Improved Heat Dissipation of High-Power LED Lighting by a Lens Plate with Thermally-Conductive Plastics

The junction temperature of high-power LED lighting was reduced effectively using a lens plate made from a thermally-conductive plastics (TCP). TCP has an excellent thermal conductivity, approximately 5 times that of polymethylmethacrylate (PMMA). Two sets of high-power LED lighting were designed using a multi array LED package with a lens plate for thermal simulation. The difference between two models was the materials of the lens plate. The lens plates of first and second models were fabricated by PMMA (PMMA lighting) and TCP (TCP lighting), respectively. At the lens plate, the simulated temperature of the TCP lighting was higher than that of the PMMA lighting. Near the LED package, the temperature of the TCP lighting was 2 °C lower than that of the PMMA lighting. This was well matched with the measured temperature of the fabricated lighting with TCP and PMMA.

Opposite Behavior of Multilayer Graphene/ Indium-Tin-Oxide p-Electrode for Gallium Nitride Based-Light Emitting Diodes Depending on Thickness of Indium-Tin-Oxide Layer

In order to improve EQE, we have investigated on the role of multilayer graphene (MLG) on the electrical and optical properties of GaN based light-emitting diodes (LEDs) with ultrathin ITO (5 nm or 10 nm)/p-GaN contacts. The MLG was transferred on the ITO/p-GaN to decrease sheet resistance of thin ITO p-electrode and improve the current spreading of LEDs. The LEDs with the ITO 5 nm and MLG/ITO 5 nm structures showed 3.25 and 3.06 V at 20 mA, and 11.69 and 13.02 mW/sr at 400 mA, respectively. After forming MLG on ITO 5 nm, the electro-optical properties were enhanced. Furthermore, the GaN based-LEDs applied to the ITO 10 nm, and MLG/ITO (10 nm) structures showed 2.95 and 3.06 V at 20 mA, and 20.28 and 16.74 mW/sr at 400 mA, respectively. The sheet resistance of the MLG transferred to ITO 5 nm was decreased approximately four fold compared to ITO 5 nm. On the other hand, the ITO 10 nm and MLG/ITO 10 nm showed a similar sheet resistance; the transmittance of the LEDs with ITO 10 nm decreased to 16% due to MLG formation on ITO. This suggests that the relationship between the sheet resistance and transmittance according to the ITO film thickness affected the electro-optical properties of the LEDs with a transparent p-electrode with the MLG/ITO dual structure.

Impact of Plasma Electron Flux on Plasma Damage‐Free Sputtering of Ultrathin Tin‐Doped Indium Oxide Contact Layer on p‐GaN for InGaN/GaN Light‐Emitting Diodes

Abstract The origin of plasma‐induced damage on a p‐type wide‐bandgap layer during the sputtering of tin‐doped indium oxide (ITO) contact layers by using radiofrequency‐superimposed direct current (DC) sputtering and its effects on the forward voltage and light output power (LOP) of light‐emitting diodes (LEDs) with sputtered ITO transparent conductive electrodes (TCE) is systematically studied. Changing the DC power voltage from negative to positive bias reduces the forward voltages and enhances the LOP of the LEDs. The positive DC power drastically decreases the electron flux in the plasma obtained by plasma diagnostics using a cutoff probe and a Langmuir probe, suggesting that the repulsion of plasma electrons from the p‐GaN surface can reduce plasma‐induced damage to the p‐GaN. Furthermore, electron‐beam irradiation on p‐GaN prior to ITO deposition significantly increases the forward voltages, showing that the plasma electrons play an important role in plasma‐induced damage to the p‐GaN. The plasma electrons can increase the effective barrier height at the ITO/deep‐level defect (DLD) band of p‐GaN by compensating DLDs, resulting in the deterioration of the forward voltage and LOP. Finally, the plasma damage‐free sputtered‐ITO TCE enhances the LOP of the LEDs by 20% with a low forward voltage of 2.9 V at 20 mA compared to LEDs with conventional e‐beam‐evaporated ITO TCE.

Effects of the growth parameters on the hydrothermal synthesis of ZnO nano-rods and their application to GaN based LEDs

Accurate growth control is required to apply ZnO nanorods to devices and materials. This study examined the effects of the growth parameters, such as pressure, growth temperature, growth time, and concentration of the growth solution. The pressure had little influence on ZnO growth. The growth temperature increased length of ZnO nanorods but not affected diameter of ZnO nanorods. The concentration of the growth solution increased the length and diameter of ZnO nanorods. The growth time affected only length of the ZnO nanorods. We confirmed the effect of ZnO nanorods growth parameters successfully and control is possible. The LEDs with ZnO nanorods exhibited improved light extraction efficiency due to the wave manipulation by the ZnO nanorods.

Consideration of number of via holes for high efficiency GaN based VI-LED design

This study examined the electrical and optical characteristics of GaN-based vertical-injection light-emitting diodes (VI-LEDs) with various numbers of via holes.