Yu. K. Dolgikh

Universal behavior of the electron g factor in Ga As ∕ Al x Ga 1 − x As quantum wells

The Zeeman splitting and the underlying

Nontrivial relaxation dynamics of excitons in high-quality InGaAs/GaAs quantum wells

g

Interference of polariton waves in structures with wide GaAs/AlGaAs quantum wells

factor for conduction-band electrons in

Experimental determination of dead layer thickness for excitons in a wide GaAs/AlGaAs quantum well

\mathrm{Ga}\mathrm{As}∕{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}

Investigation of the mechanisms of exciton coherence relaxation in single GaAs/AlGaAs quantum wells by the methods of excitonic induction

quantum wells have been measured by spin-beat spectroscopy based on a time-resolved Kerr rotation technique. The experimental data are plotted as functions of the lowest band-to-band optical transition energy, i.e., the effective band gap of the quantum wells. The model calculations suggest that in the tracked range of transition energies

Temperature-induced delocalization of excitations in GaAs/AlAs type-II superlattices

E

All-optical NMR in semiconductors provided by resonant cooling of nuclear spins interacting with electrons in the resonant spin amplification regime

from

Carrier spin dynamics in GaAs/AlGaAs quantum wells with a laterally localizing electric potential

1.52\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}2.0\phantom{\rule{0.3em}{0ex}}\mathrm{eV}

Nonlinear dynamics of the exciton reflection spectrum

, the component of electron

Anisotropy of the relaxation of the electron spin caused by competition of the Rashba and Dresselhaus mechanisms

g