Yu. M. Zhukov

The electronic structure formation of CuxTiSe2 in a wide range (0.04 < x < 0.8) of copper concentration

An experimental study of the electronic structure of copper intercalated titanium dichalcogenides in a wide range of copper concentrations (x = 0.05 - 0.6) using the x-rays photoemission spectroscopy, resonant photoemission and x-rays absorption spectroscopy has been performed. Negative energy shifts of the Ti 2p and Se 3d core levels spectra and a corresponding decrease of the photon energy in Ti 2p absorption spectra with increasing concentration of copper have been found. Such sign-anomalous shifts may be explained by the shielding effect of the corresponding atomic shells as a result of the dynamic charge transfer during the formation of a covalent chemical bond between the copper atoms and the TiSe2 matrix.An experimental study of the electronic structure of copper intercalated titanium dichalcogenides in a wide range of copper concentrations (x = 0.04-0.8) using x-ray photoelectron spectroscopy, resonant photoelectron spectroscopy, and x-ray absorption spectroscopy has been performed. Shift towards low energies of the Ti 2p and Se 3d core level spectra and a corresponding decrease in the photon energy of Ti 2p absorption spectra with the increase in copper concentration have been found. These sign-anomalous shifts may be explained by the shielding effect of the corresponding atomic shells as a result of the dynamic charge transfer during the formation of a covalent chemical bond between the copper atoms and the TiSe2 matrix.

Effect of the exposure time at recording an X-ray photoelectron spectrum on the charge state and environment of copper in mordenites

The effect of the exposure time at recording an X-ray photoelectron spectrum on the valence state and environment of copper in mordenite-type zeolite has been studied. It has been found that X-ray irradiation under the conditions of the experiment results in the redistribution of copper ions between the existing forms determined by differences in their coordination but without change in their valence state.

Influence of surface processing in a BCl3 plasma on the formation of ohmic contacts to AlGaN/GaN structures

Conditions for the surface processing of a cap GaN layer in AlGaN/GaN high-electron-mobility transistor (HEMT) structures in a BCl3 plasma have been found. They make it possible to considerably reduce the resistance of ohmic contacts to Group III nitride-based field-effect transistors. The primary factor behind this effect is the noticeable lowering of a potential barrier on the GaN surface through the formation of nitrogen vacancies that act as donors and, correspondingly, a rise in the surface concentration of electrons.

Atomic composition and stability of Langmuir–Blodgett monolayers based on siloxane dimer of quaterthiophene on the surface of polycrystalline gold

Atomic composition of monolayers based on siloxane dimer of quaterthiophene deposited by Langmuir–Blodgett technique on a silicon dioxide surface partially covered by gold film and the stability of these monolayers upon surface treatment by Ar+ ions bombardment have been studied. Experimental results for the chemical composition of a series of studied surfaces have been obtained by X-ray photoelectron spectroscopy (XPS) by recording XPS spectra of C 1s, O 1s, S 2p, and Au 4f core levels. The relative concentration of Au and Si substrate atoms and the composition of ex situ prepared surface under study were determined within 10–15%, which indicates that Langmuir–Blodgett monolayers based on siloxane dimer of quaterthiophene form continuous coating in a considerable extent. Prior to the treatment of the studied surface by Ar+ ions bombardment, carbon- and oxygen-containing surface adsorbates provided a considerable contribution to the results of XPS measurements. The surface cleaning by Ar+ ions with energy 3 keV at electric current through sample of ~1 μA in several 30-s steps has led to the etching of surface adsorbates and next Langmuir–Blodgett films of the siloxane dimer of quaterthiophene.

Electronic structure of graphene on Ni(111) and Ni(100) surfaces

A comparative investigation of graphene prepared by cracking of propylene (C3H6) on nickel surfaces with different orientations, Ni(111) and Ni(100), has been carried out using angle-resolved photoemission spectroscopy. It has been shown that the graphene formed on the Ni(111) surface is well ordered on a large surface area, whereas the graphene on the Ni(100) surface has a well-defined domain structure. It has been found that the electronic structures of the two systems are similar to each other, and graphene is strongly bound to the nickel substrate. It has been demonstrated that the intercalation of a gold monolayer for the two systems leads to the formation of an electronic structure that is characteristic of quasi-free-standing graphene.

Electronic structure of VxTi1−xSe2 in wide concentration region (0.06 ≤ x ≤ 0.9)

An experimental study of the electronic structure of VxTi1-xSe2 system in a wide range of vanadium concentrations (x = 0.06-0.9) using x-ray photoelectron spectroscopy and resonant photoelectron spectroscopy has been performed. The partial charge transfer from the VSe2 to TiSe2 structural fragments is experimentally observed, and the most part of the charge is localized on the vanadium atoms in the VSe2 structural fragments.