Yuichi Minoura

Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz

In this work, we demonstrated an excellent output power (Pout) density of 3.0 W/mm at 96 GHz using a novel collapse-free InAlGaN/GaN-HEMT with an 80-nm gate for a millimeter-wave amplifier. The developed devices showed basic reliability for commercial products. To eliminate the current collapse, a unique double-layer silicon nitride (SiN) passivation film that has oxidation resistance was adopted. We proved the potential of InAlGaN/GaN-HEMT using our unique device technology experimentally and analytically.

3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier

We demonstrated a W-band high-power-density MMIC power amplifier with 80 nm InAlGaN/GaN HEMTs. The MMIC consists of two-stage cascade units, each of which has two transistors with the same gate periphery for a high gain and low-loss matching circuit. The MMIC achieved a maximum output power of 1.15 W and maximum PAE of 12.3 % at 86 GHz under CW operation. Its power density reached 3.6 W/mm, representing the highest performance of the W-band GaN HEMT MMIC power amplifier.

InAlGaN/GaN-HEMT device technologies for W-band high-power amplifier

We demonstrated an excellent output power (Pout) density performance using a novel InAlGaN/GaN-HEMT with an 80-nm gate for a W-band amplifier. To eliminate current collapse, a unique double-layer silicon nitride (SiN) passivation film with oxidation resistance was adopted. The developed discrete GaN-HEMT achieved a Pout density of 3.0 W/mm at 96 GHz, and we fabricated W-band amplifier MMIC using the air-bridge wiring technology. The Pout density of the MMIC reached 3.6 W/mm at 86 GHz. We proved the potential of the developed InAlGaN/GaN-HEMT experimentally using our unique device technology. With the aim of future applications, we developed a novel wiring-inter-layer technology. It consists of a cavity structure and a moisture-resistant dielectric film technology. We demonstrated excellent high-frequency performances and low current collapse originating in humidity-degradation using AlGaN/GaN-HEMT. This is also a valuable technology for InAlGaN/GaN-HEMT.

High-Power-Density InAlGaN/GaN-HEMT Technology for W-Band Amplifier

We demonstrated an excellent output power (Pout) density performance using a novel InAlGaN/GaN-HEMT with an 80-nm gate for a high-power W-band amplifier. The developed HEMT showed basic reliability for commercial products. A unique double-layer silicon nitride (SiN) passivation film with oxidation resistance was adopted to suppress current collapse. The developed discrete InAlGaN/GaN-HEMT achieved a Pout density of 3.0 W/mm at 96 GHz, and the Pout density of MMIC reached 3.6W/mm at 86 GHz. We proved excellent potential of developed InAlGaN/GaN-HEMT using our unique device technologies. Furthermore, we suggested the physical advantage of the InAlGaN/GaN-HEMT structure using device simulator.