Yujin Cho

Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes

Piezoelectric and ferroelectric properties in the two-dimensional (2D) limit are highly desired for nanoelectronic, electromechanical, and optoelectronic applications. Here we report the first experimental evidence of out-of-plane piezoelectricity and ferroelectricity in van der Waals layered α-In2Se3 nanoflakes. The noncentrosymmetric R3m symmetry of the α-In2Se3 samples is confirmed by scanning transmission electron microscopy, second-harmonic generation, and Raman spectroscopy measurements. Domains with opposite polarizations are visualized by piezo-response force microscopy. Single-point poling experiments suggest that the polarization is potentially switchable for α-In2Se3 nanoflakes with thicknesses down to ∼10 nm. The piezotronic effect is demonstrated in two-terminal devices, where the Schottky barrier can be modulated by the strain-induced piezopotential. Our work on polar α-In2Se3, one of the model 2D piezoelectrics and ferroelectrics with simple crystal structures, shows its great potential in electronic and photonic applications.

Second-harmonic microscopy of strain fields around through-silicon-vias

Through-Silicon-Vias (TSVs)—10 μm-diameter conducting rods that connect vertically stacked silicon layers—provide three dimensional circuit integration, but introduce strain in the surrounding silicon when thermally cycled. Here, we noninvasively probe strain fields around Cu TSVs in Si(001) using optical second-harmonic generation (SHG) microscopy. Results are compared with micro-Raman spectra of the strained regions. We find that SHG probes strain fields more quickly than Raman spectroscopy, while maintaining comparable sensitivity and spatial resolution, and avoiding the need for spectral analysis. Moreover, SHG is selectively sensitive to axial shear components uiz (i = x, y) of the strain tensor that are often neglected in Raman analysis. Thus, SHG complements Raman spectroscopy.

New Mechanism for Ferroelectricity in the Perovskite Ca2–xMnxTi2O6 Synthesized by Spark Plasma Sintering

Perovskite oxides hosting ferroelectricity are particularly important materials for modern technologies. The ferroelectric transition in the well-known oxides BaTiO3 and PbTiO3 is realized by softening of a vibration mode in the cubic perovskite structure. For most perovskite oxides, octahedral-site tilting systems are developed to accommodate the bonding mismatch due to a geometric tolerance factor t = (A-O)/[√2(B-O)] < 1. In the absence of cations having lone-pair electrons, e.g., Bi3+ and Pb2+, all simple and complex A-site and B-site ordered perovskite oxides with a t < 1 show a variety of tilting systems, and none of them become ferroelectric. The ferroelectric CaMnTi2O6 oxide is, up to now, the only one that breaks this rule. It exhibits a columnar A-site ordering with a pronounced octahedral-site tilting and yet becomes ferroelectric at Tc ≈ 650 K. Most importantly, the ferroelectricity at T < Tc is caused by an order-disorder transition instead of a displacive transition; this character may be useful to overcome the critical thickness problem experienced in all proper ferroelectrics. Application of this new ferroelectric material can greatly simplify the structure of microelectronic devices. However, CaMnTi2O6 is a high-pressure phase obtained at 7 GPa and 1200 °C, which limits its application. Here we report a new method to synthesize a gram-level sample of ferroelectric Ca2-xMnxTi2O6, having the same crystal structure as CaMnTi2O6 and a similarly high Curie temperature. The new finding paves the way for the mass production of this important ferroelectric oxide. We have used neutron powder diffraction to identify the origin of the peculiar ferroelectric transition in this double perovskite and to reveal the interplay between magnetic ordering and the ferroelectric displacement at low temperatures.

Piezoelectric modulation of nonlinear optical response in BaTiO3 thin film

We study the nonlinear optical response in a strained thin film ferroelectric oxide BaTiO3 using piezoelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 (001) as a variable strain substrate and La-doped SrTiO3 as a conductive buffer layer. The rotation-anisotropic second harmonic intensity profile shows hysteretic modulation corresponding to the strain variation from the inverse piezoelectric response of the substrate. An enhancement of 15% is observed at 1.2 kV/cm, while a control sample shows negligible change as a function of piezovoltage. Reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, and high-resolution scanning transmission electron microscopy reveal the epitaxial interface. X-ray diffraction and piezoresponse force microscopy confirm tetragonal distortion and ferroelectricity of the BaTiO3 overlayer. Our results suggest a promising route to enhance the performance of nonlinear optical oxides for the development of future nano-opto-mechanical devices.

Polarization retention in ultra-thin barium titanate films on Ge(001)

We investigate polarization retention in 10 to 19 nm thick ferroelectric BaTiO3 (BTO) grown on Ge(001) by molecular beam epitaxy. The out-of-plane direction and reversibility of electric polarization were confirmed using piezoresponse force microscopy. After reverse-poling selected regions of the BTO films to a value P with a biased atomic-force microscope tip, we monitored relaxation of their net polarization for as long as several weeks using optical second-harmonic generation microscopy. All films retained reversed polarization throughout the observation period. 10 nm-thick BTO films relaxed monotonically to a saturation value of 0.9 P after 27 days and 19 nm films to 0.75 P after 24 h. Polarization dynamics are discussed in the context of a 1D polarization relaxation/kinetics model.We investigate polarization retention in 10 to 19 nm thick ferroelectric BaTiO3 (BTO) grown on Ge(001) by molecular beam epitaxy. The out-of-plane direction and reversibility of electric polarization were confirmed using piezoresponse force microscopy. After reverse-poling selected regions of the BTO films to a value P with a biased atomic-force microscope tip, we monitored relaxation of their net polarization for as long as several weeks using optical second-harmonic generation microscopy. All films retained reversed polarization throughout the observation period. 10 nm-thick BTO films relaxed monotonically to a saturation value of 0.9 P after 27 days and 19 nm films to 0.75 P after 24 h. Polarization dynamics are discussed in the context of a 1D polarization relaxation/kinetics model.