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Publication
Featured researches published by Yukihiko Nakata.
SID Symposium Digest of Technical Papers | 2000
Shusheng He; Hirohiko Nishiki; John Hartzell; Yukihiko Nakata
Using a suitable dilution process at PECVD improves quality of gate nitride and a-Si:H channel at low temperature. By using suitable Ar dilution in gate nitride and H2 dilution in a-Si:H channel, the low temperature a-Si:H TFTs have not only similar channel mobility and threshold voltage, but also similar stress induced threshold voltage shift as usual a-Si:H TFTs.
Archive | 2001
Apostolos T. Voutsas; John W. Hartzell; Yukihiko Nakata
Archive | 2001
Apostolos T. Voutsas; John W. Hartzell; Yukihiko Nakata
Archive | 2002
Apostolos T. Voutsas; John W. Hartzell; Yukihiko Nakata
Archive | 2000
Apostolos T. Voutsas; Yukihiko Nakata
Archive | 2000
Yukihiko Nakata; Apostolos T. Voutsas; John W. Hartzell
シャ-プ技報 | 2001
Tolis Voutsas; Hirohiko Nishiki; Mike Atkinson; John W. Hartzell; Yukihiko Nakata
Archive | 2002
Apostolos T. Voutsas; Yukihiko Nakata
Archive | 2002
Hirohiko Nishiki; James Mikel Atkinson; Yukihiko Nakata
Archive | 2002
Yukihiko Nakata; Apostolos T. Voutsas; John W. Hartzell
