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Yukihiko Nakata
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SID Symposium Digest of Technical Papers | 2000

19.4: Low Temperature PECVD a-Si:H TFT for Plastic Substrates

Shusheng He; Hirohiko Nishiki; John Hartzell; Yukihiko Nakata

Using a suitable dilution process at PECVD improves quality of gate nitride and a-Si:H channel at low temperature. By using suitable Ar dilution in gate nitride and H2 dilution in a-Si:H channel, the low temperature a-Si:H TFTs have not only similar channel mobility and threshold voltage, but also similar stress induced threshold voltage shift as usual a-Si:H TFTs.

Archive | 2001

Method of optimizing channel characteristics using multiple masks to form laterally crystallized ELA poly-Si films

Apostolos T. Voutsas; John W. Hartzell; Yukihiko Nakata

Archive | 2001

Method of optimizing channel characteristics using laterally-crystallized ELA poly-si films

Apostolos T. Voutsas; John W. Hartzell; Yukihiko Nakata

Archive | 2002

LCD device with optimized channel characteristics

Apostolos T. Voutsas; John W. Hartzell; Yukihiko Nakata

Archive | 2000

Method to sputter silicon films

Apostolos T. Voutsas; Yukihiko Nakata

Archive | 2000

Sputtered silicon target for fabrication of polysilicon thin film transistors

Yukihiko Nakata; Apostolos T. Voutsas; John W. Hartzell

シャ-プ技報 | 2001

Sputtering Technology of Si Films for Low-Temperature Poly-Si TFTs (特集 液晶)

Tolis Voutsas; Hirohiko Nishiki; Mike Atkinson; John W. Hartzell; Yukihiko Nakata

Archive | 2002

Apparatus to sputter silicon films

Apostolos T. Voutsas; Yukihiko Nakata

Archive | 2002

System and method for etching resin with an ozone wet etching process

Hirohiko Nishiki; James Mikel Atkinson; Yukihiko Nakata

Archive | 2002

Semiconductor devices fabricated using sputtered silicon targets

Yukihiko Nakata; Apostolos T. Voutsas; John W. Hartzell

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