Yun Deng

Long wavelength strain-engineered InAs multi-layer stacks quantum dots laser diode on GaAs substrate

The growth of GaAs based 1.5 μm multi-layer stacked InAs quantum dots (QDs) has been investigated by solid-source molecular beam epitaxy (SSMBE), which was very important devices for transmission window. Owing to a strong electronic coupling between the QDs layers and the quantum wells (QWs), and antimony (Sb) introduced by for long-wavelength semiconductor lasers were obtained. The device structure for QDs laser diodes (LDs) with a cavity length of 1000 μm and stripe width of 100 μm as well as the device fabrication results will also be presented. The output performance was achieved with continuous wave (CW) operation, the measurement were from 20 to 60°C with a temperature step of 10°C. The threshold current density was 168 A/cm2, and the CW operating up to 20 mW at room temperature (RT) was achieved.

980-nm 14-pin butterfly module dual-channel CW QW semiconductor laser for pumping

Nowadays, with its mature progress, the 790 nm - 1000 nm wavelength semiconductor laser is widely used in the fields of laser machining, laser ranging, laser radar, laser imaging, laser anti-counterfeit, biomedical and etc. Best of all, the 980 nm wavelength laser has its widespread application in the pumping source of Er3+ -doped fiber amplifier, optic fiber gyroscopes and other devices. The output wavelength of the fiber amplifier which takes the 980 nm wavelength laser as its pumping source is between 1060 nm and 1550 nm. This type of laser has its extremely wide range of applications in optical communication and other fields. Moreover, some new application domains keep constantly being developed. The semiconductor laser with the dual-channel ridge wave guide and the 980 nm emission wavelength is presented in this paper. In our work, we fabricated Lasers with the using of multi-quantum well (MQW) wafer grew by MBE, and the PL-wavelength of the MQW was 970 nm. The standard photofabrication method and the inductively coupled plasma (ICP) etching technology are adopted in the process of making dual-channel ridge wave guide with the width of 4 μm and height of 830 nm. In the state of continuous work at room temperature, the laser could output the single mode beam of 70 mW stably under the current of 100 mA. The threshold current of the laser diode is 17 mA and the slope efficiency is 0.89 W/A. The 3 dB spectrum bandwidth of the laser beam is 0.2 nm. This laser outputs its beam by a pigtail fiber on which Bragg grating for frequency stabilization is carved. The laser diode, the tail fiber, and the built-in refrigeration and monitoring modules are sealed in a 14-pin butterfly packaging. It can be used directly as the pumping source of Er3+ - doped fiber amplifier or optic fiber gyroscopes.

Growth of InGaSb quantum dots on GaAs substrate by molecular beam epitaxy

The growth parameters affecting the deposition of InGaSb quantum dots (QDs) on GaAs substrate by molecular beam epitaxy (MBE) were reported. The InGaSb were achieved using lower growth temperature and optimized growth interruption, which is important to obtain high-quality materials Photoluminescence (PL) measurements show the good optical quality of InGaSb QDs. At room temperature, the wavelength of PL spectrum and full-width at half-maximum (FWHM) are around 1.3 m and 106 meV, respectively.

1.31-μm GaInNAs lasers fabricated with pulsed anodic oxidation

Semiconductor lasers at wavelengths around 1.3μm are widely used for optic communications. For GaInNAs, the incorporation of nitrogen in the active layer can reduce the band-gap energy and allow emission wavelengths as long as 1.3μm. Ridge waveguide GaInNAs strain single-quantum-well lasers were fabricated with pulsed anodic oxidation (PAO). Using the technology PAO, we prevented the damage from the ion bombardment in the procedure of sputtering silicon dioxide used for building the insulating film. The output power of the laser with a wavelength of 1.31μm reached 14mW in CW mode at room temperature. The threshold-current was 18mA and its density was 360A/cm2. The characteristic temperature of lasers was 135.1K and the quantum efficiency reached 76%.