Minghui You

2.0 μm room temperature CW operation of InGaAsSb/AlGaAsSb laser with asymmetric waveguide structure

The GaInAsSb/AlGaAsSb double quantum well lasers with an emission wavelength 2.0 μm, using the separate-confinement asymmetric waveguide, have been designed and fabricated, showing high quantum efficiency and high power conversion efficiency at continuous-wave operation mode. The threshold current density of the device is as low as 92 A/cm2. The internal loss coefficient and the internal quantum efficiency are 1.0 cm−1 and 86.1%, respectively. The 35% maximum power conversion efficiency (PCE) and narrow far-field patterned were achieved.

Long wavelength strain-engineered InAs multi-layer stacks quantum dots laser diode on GaAs substrate

The growth of GaAs based 1.5 μm multi-layer stacked InAs quantum dots (QDs) has been investigated by solid-source molecular beam epitaxy (SSMBE), which was very important devices for transmission window. Owing to a strong electronic coupling between the QDs layers and the quantum wells (QWs), and antimony (Sb) introduced by for long-wavelength semiconductor lasers were obtained. The device structure for QDs laser diodes (LDs) with a cavity length of 1000 μm and stripe width of 100 μm as well as the device fabrication results will also be presented. The output performance was achieved with continuous wave (CW) operation, the measurement were from 20 to 60°C with a temperature step of 10°C. The threshold current density was 168 A/cm2, and the CW operating up to 20 mW at room temperature (RT) was achieved.

Effect of InGaAs strain reducing layer and rapid thermal annealing on the properties of InAs/GaAs quantum

In this study, uniform InAs QDs were grown on the GaAs (001) substrate by MBE by the S-K mode. The effects of strain reducing layer and rapid thermal anneling on the optical properties of InAs/(In)GaAs QDs were investigated by PL measurements. The annealing results in PL peak energy red-shift which strongly depends on In composition of InxGaAs strained reducing layer , QDs with lower density and/or capped by an InGaAs layer are very sensitive to the annealing. At given annealing conditions, PL peak energy blue-shift of low-density QDs is much larger than that of high density QDs.

2.2 μm InGaAsSb/AlGaAsSb laser diode under continuous wave operating at room temperature

Abstract2.2 μm InGaAsSb/AlGaAsSb Sb-based type-I laser diodes (LDs) were fabricated, with cavity lengths of 1000 μm and stripe width of 150 μm. The high output performance was achieved with the threshold current density of the device is as low as 187 A/cm2, slope efficiency of 0.2 W/A, and vertical and parallel divergent angles ϑ⊥ = 42° and ϑ| = 10°, respectively. The continuous wave operating up to 320 mW at room temperature (RT) were achieved.

2.0 µm multiple quantum-wells InGaAsSb/AlGaAsSb laser diode operating continuous wave at room temperature

The multiple quantum wells (MQWs) InGaAsSb/AlGaAsSb laser diodes (LDs) with an emission wavelength around 2.0µm were designed and fabricated by molecular beam epitaxy (MBE). The good performance of LD was achieved, with the low threshold current of 225 mA, and the slope efficiency of 0.23 W/A, respectively. The maximum outpower of 16 mW at 500 mA drive current was obtained at room temperature(RT).

Study on high quality InGaAsSb/AlGaAsSb MQWs grown by molecular beam epitaxy

In this work, the Type I InGaAsSb/AlGaAsSb multiple-quantum-wells (MQWs) has been grown by molecular beam epitaxy (MBE). The comprised five InGaAsSb quantum wells are embedded in AlGaAsSb barriers, the barriers/QWs periodicity matches to GaSb substrates, and satellite peaks indicate a good crystalline quality. The central peak emission wavelength is around 2.0 µm at room temperature by photoluminescence (PL), with a full-width at half-maximum (FWHM) of 39 meV.

High performance blue light-emitting diodes on patterned Si substrate

High quality crack-free GaN layers were successfully grown and the InGaN/GaN based blue LEDs fabricated on patterned Si (111) substrates. In addition to using the patterned growth technique, thin AlN and SiNx interlayers grown at high temperatures were also employed to partially release the residual stress and to further improve the crystalline quality. 300 µm square blue LEDs fabricated on the islands, without thinning and package, exhibited a high output power of around 0.68 mW at a drive current of 20 mA.