Yunchu Li

Pulse width compression and enhancement of peak power in a diode-pumped doubly Q-switched Nd:GdVO4 1.34 μm laser with AO and V3+:YAG saturable absorber

By using both acousto-optic (AO) modulator and V3+:YAG saturable absorber, a diode-pumped doubly Q-switched a-cut Nd:GdVO4 laser at 1.34 μm is realized. The average output power and the pulse width for different AO repetition rate f have been measured. The experimental results show that the doubly Q-switched laser can compress the pulse width and improve the pulsed peak power in comparison to the singly Q-switched laser with AO or V3+:YAG saturable absorber. At the pump power 10.34 W and f = 10 kHz, the greatest pulse width compression ratio 72% and the highest peak power improvement 8.8 times have been obtained, respectively.

Doubly passively Q-switched Nd:GGG laser with a monolayer graphene saturable absorber and GaAs wafer

A doubly passively Q-switched Nd:GGG laser with monolayer graphene and GaAs wafer working as saturable absorbers is presented, in which the GaAs wafer also works as the output coupler. At the maximum incident pump power of 7.69 W, the obtained output power, the pulse duration and the pulse repetition rate are 820 mW, 1.06 ns, and 21.5 kHz, respectively, corresponding to pulse energy of 38.2 μJ and peak power of 35.9 kW, respectively.

Improvement of laser characteristics for diode-pumped passively Q-switched and mode-locked Nd:Lu0.15Y0.85VO4 laser by AO modulator

The hybrid Q-switched and mode-locked (QML) operation of Nd:Lu0.15Y0.85VO4 crystal at 1.34 μm with V:YAG saturable absorber and acousto-optic (AO) modulator has been realized. The laser characteristics are distinctly improved by the hybrid QML if compared to those with the single V:YAG QML. At the pump power of 5.04 W, the Q-switched pulse energy is enlarged to 5.6 times and the Q-switched pulse width is shortened to 40% by the AO modulator in contrast to those of the single passively QML.