Yung Ho Kahng

Highly Conductive PEDOT:PSS Nanofibrils Induced by Solution‐Processed Crystallization

The fabrication of electronic devices based on organic materials, known as ’printed electronics’, is an emerging technology due to its unprecedented advantages involving fl exibility, light weight, and portability, which will ultimately lead to future ubiquitous applications. [ 1 ] The solution processability of semiconducting and metallic polymers enables the cost-effective fabrication of optoelectronic devices via high-throughput printing techniques. [ 2 ] These techniques require high-performance fl exible and transparent electrodes (FTEs) fabricated on plastic substrates, but currently, they depend on indium tin oxide (ITO) coated on plastic substrates. However, its intrinsic mechanical brittleness and inferior physical properties arising from lowtemperature ( T ) processing below the melting T of the plastic substrates (i.e., typically below 150 °C) have increased the demand for alternative FTE materials. [ 3 ]

Large-scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodes

This work demonstrates a large-scale batch fabrication of GaN light-emitting diodes (LEDs) with patterned multi-layer graphene (MLG) as transparent conducting electrodes. MLG films were synthesized using a chemical vapor deposition (CVD) technique on nickel films and showed typical CVD-synthesized MLG film properties, possessing a sheet resistance of [Formula: see text] with a transparency of more than 85% in the 400-800 nm wavelength range. The MLG was applied as the transparent conducting electrodes of GaN-based blue LEDs, and the light output performance was compared to that of conventional GaN LEDs with indium tin oxide electrodes. Our results present a potential development toward future practical application of graphene electrodes in optoelectronic devices.

The application of graphene as electrodes in electrical and optical devices

Graphene is a promising next-generation conducting material with the potential to replace traditional electrode materials such as indium tin oxide in electrical and optical devices. It combines several advantageous characteristics including low sheet resistance, high optical transparency and excellent mechanical properties. Recent research has coincided with increased interest in the application of graphene as an electrode material in transistors, light-emitting diodes, solar cells and flexible devices. However, for more practical applications, the performance of devices should be further improved by the engineering of graphene films, such as through their synthesis, transfer and doping. This article reviews several applications of graphene films as electrodes in electrical and optical devices and discusses the essential requirements for applications of graphene films as electrodes.

Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes.

A highly flexible and transparent transistor is developed based on an exfoliated MoS2 channel and CVD-grown graphene source/drain electrodes. Introducing the 2D nanomaterials provides a high mechanical flexibility, optical transmittance (∼74%), and current on/off ratio (>10(4)) with an average field effect mobility of ∼4.7 cm(2) V(-1) s(-1), all of which cannot be achieved by other transistors consisting of a MoS2 active channel/metal electrodes or graphene channel/graphene electrodes. In particular, a low Schottky barrier (∼22 meV) forms at the MoS2 /graphene interface, which is comparable to the MoS2 /metal interface. The high stability in electronic performance of the devices upon bending up to ±2.2 mm in compressive and tensile modes, and the ability to recover electrical properties after degradation upon annealing, reveal the efficacy of using 2D materials for creating highly flexible and transparent devices.

Three-Dimensional Integration of Organic Resistive Memory Devices

Since the discovery of conducting polymers [ 1 ] , organic-based electronics such as organic light-emitting diodes, transistors, photovoltaics, and memory devices have been spotlighted as potentially innovative devices given their easy and lowcost fabrication by spin-coating or ink-jet printing, and their fl exibility. [ 2–15 ] Among these, organic memories have been extensively investigated for data-storage application. [ 11 , 14 , 16–21 ]

Stable Switching Characteristics of Organic Nonvolatile Memory on a Bent Flexible Substrate

Organic-based electronics have received great attention due to their material variety and advantageous properties such as fl exibility, printability, and light-weightness. [ 1 , 2 ] Their low costs, based on their ease of fabrication and large-area processing capabilities, increase the merits of organic electronics even more. [ 3 , 4 ] Consequently, organic electronics, including organic solar cells, light-emitting diodes, thin-fi lm transistors, and memories, have been extensively investigated for the realization of practical device applications. [ 5–8 ] Among these, organic memories have emerged as an excellent candidate for the nextgeneration information storage media because of their potential application in fl exible memory devices. [ 8–18 ] There are different types of organic memories. They are distinguished as ferroelectric, [ 13 , 14 , 18 ] fl ash, [ 15 , 18 ] and resistive-type organic memories [ 16–18 ]

Enhanced Charge Injection in Pentacene Field‐Effect Transistors with Graphene Electrodes

S. Lee , G. Jo , S.-J. Kang , G. Wang , M. Choe , W Park , . Prof. D.-Y. Kim , H. Dr. . Y Kahng , Prof. Lee . TDepartment of Nanobio Materials and Electronics Department of Materials Science and Engineering Gwangju Institute of Science and Technology Gwangju 500–712, Korea E-mail: yhkahng@gist.ac.kr; tlee@gist.ac.kr Dr. Y. H. KahngResearch Institute for Solar and Sustainable Energies Gwangju Institute of Science and Technology Gwangju 500–712, Korea

Tuning of a graphene-electrode work function to enhance the efficiency of organic bulk heterojunction photovoltaic cells with an inverted structure

We demonstrate the fabrication of inverted-structure organic solar cells (OSCs) with graphene cathodes. The graphene film used in this work was work-function-engineered with an interfacial dipole layer to reduce the work function of graphene, which resulted in an increase in the built-in potential and enhancement of the charge extraction, thereby enhancing the overall device performance. Our demonstration of inverted-structure OSCs with work-function-engineering of graphene electrodes will foster the fabrication of more advanced structure OSCs with higher efficiency.

Graphene-based gas sensor: metal decoration effect and application to a flexible device

Roles of metal nanoparticles (NPs) on graphene-based devices were investigated in terms of gas-sensing characteristics of NO2 and NH3, and flexible gas sensing was also realized for future applications. The synergistic combination of metal NPs and graphene modulates the electronic properties of graphene, leading to enhancement of selectivity and sensitivity in gas-sensing characteristics. Introduction of palladium (Pd) NPs on the graphene accumulates hole carriers of graphene, resulting in the gas sensor being sensitized by NH3 gas molecular adsorption. In contrast, aluminum (Al) NPs deplete hole carriers, which dramatically improves NO2 sensitivity. Furthermore, the sensitivity of flexible graphene-based gas sensors was also enhanced via the same approach, even after 104 bending cycles and was maintained after 3 months.

Tuning of the Electronic Characteristics of ZnO Nanowire Field Effect Transistors by Proton Irradiation

We demonstrated a controllable tuning of the electronic characteristics of ZnO nanowire field effect transistors (FETs) using a high-energy proton beam. After a short proton irradiation time, the threshold voltage shifted to the negative gate bias direction with an increase in the electrical conductance, whereas the threshold voltage shifted to the positive gate bias direction with a decrease in the electrical conductance after a long proton irradiation time. The electrical characteristics of two different types of ZnO nanowires FET device structures in which the ZnO nanowires are placed on the substrate or suspended above the substrate and photoluminescence (PL) studies of the ZnO nanowires provide substantial evidence that the experimental observations result from the irradiation-induced charges in the bulk SiO(2) and at the SiO(2)/ZnO nanowire interface, which can be explained by a surface-band-bending model in terms of gate electric field modulation. Our study on the proton-irradiation-mediated functionalization can be potentially interesting not only for understanding the proton irradiation effects on nanoscale devices, but also for creating the property-tailored nanoscale devices.