Yuzo Mori

Hard X-ray Diffraction-Limited Nanofocusing with Kirkpatrick-Baez Mirrors

Nanofocused X-ray beams are necessary for nanometer-scale spatial microscopy analysis. X-ray focusing using a Kirkpatrick-Baez setup with two total reflection mirrors is a promising method, allowing highly efficient and energy-tuneable focusing. In this paper, we report the development of ultraprecise mirror optics and the realization of a nanofocused hard-X-ray beam. Fabricated mirrors having a figure accuracy of 2 nm peak to valley height give ideal diffraction-limited focusing at the hard X-ray region. The focal size, defined as the full width at half maximum in the intensity profile, was 36 nm ×48 nm at an X-ray energy of 15 keV.

Fabrication of elliptical mirror at nanometer-level accuracy for hard x-ray focusing by numerically controlled plasma chemical vaporization machining

We established an efficient ultraprecise figuring process in which numerically controlled plasma chemical vaporization machining (NC-PCVM) and numerically controlled elastic emission machining (NC-EEM) are utilized serially. Intensity images of the x rays reflected by total reflection mirrors greatly fluctuate with respect to the figure error of spatial wavelength ranging from submillimeter to 10 mm. In NC-PCVM, figure errors for spatial wavelength range longer than 10 mm are removed efficiently by using the rotary electrode, and the spatial wavelength close to 1 mm can be corrected by using the pipe electrode. The residual figure error for the spatial wavelength close to 0.1 mm is finally removed by EEM. In this article, we describe the ultraprecise figuring process utilizing the NC-PCVM. Two elliptical mirrors for a Kirkpatrick–Baez (KB) microfocusing unit were manufactured by NC-PCVM using the rotary electrode and the pipe electrode in combination, and a figure accuracy higher than 3 nm (p–v) was achie...

Atomic-scale evaluation of Si(111) surfaces finished by the planarization process utilizing SiO2 particles mixed with water

Flattening performance is evaluated on the atomic scale of Si(lll) surfaces finished by a precise surface-preparation method utilizing fine SiO 2 particles mixed with ultrapure water. An atomically flat Si( 111) surface with periodic steps, which is obtained by dipping into an NH 4 F solution, is processed by the surfacing method. The low-energy electron diffraction image of the processed surface exhibits a 1 X 1 pattern. Atomic force microscopy observations show that the periodic steps formed by the NH 4 F treatment are completely removed, and highly resolved scanning tunneling microscopy images reveal that the processed surface is composed of nanometer-scaled small terraces. From these results, it is speculated that fine powder particles in ultrapure water remove microbumps and apparent steps to flatten work surfaces, although they can etch some surface atoms inside a terrace.