Yves Mancuso

A Broadband 4.5–15.5-GHz SiGe Power Amplifier With 25.5-dBm Peak Saturated Output Power and 28.7% Maximum PAE

This paper presents the design of a broadband power amplifier (PA) in 130-nm SiGe BiCMOS technology. First, a single-stage broadband single-cell PA covering the 4.5-18-GHz frequency band is introduced. In this frequency range, this single cell achieves a measured gain, saturated output power ( Psat), output 1-dB compression point ( P1dB), and power-added efficiency (PAE) in the range from 12.8 to 15.7 dB, 18.8 to 23.7 dBm, 16.7 to 19.5 dBm, and 11.4 to 31.9%, respectively. Its peak saturated output power and maximum PAE are both obtained at 8.5 GHz. Second, to increase the output power, a PA consisting of two parallel broadband cells with a power combination is presented. This PA operates in the 4.5-15.5-GHz frequency range with measured gain, Psat, P1dB, and PAE in the range from 11 to 16.6 dB, 21.3 to 25.5 dBm, 18.7 to 21.7 dBm, and 11.9 to 28.7%, respectively. It achieves its peak saturated output power of 25.5 dBm at 8.5 GHz and its maximum PAE of 28.7% with an associated output power of 23.6 dBm at 6.5 GHz. Each of those two PAs achieves better performances than the state-of-the-art in broadband SiGe technology when comparing the output power level and efficiency.

New developments and trends for active antennas and TR modules

This paper presents new developments and perspectives in Phased Arrays Radars and Electronic Warfare for the next generations of T/R modules (medium/long term), in order to decrease the mass production cost, while increasing the level of performance and reliability. In terms of physical architecture, even if the brick one is more current at mid-term, the tile concept is investigated for conformal and/or multifunction phased array antennas: a 3-dimension module will lead to a drastic reduction of size and weight of the antenna. MMICs are always the key components, with evolutions towards multifunction chips, new processes like GaN,SiGe, MEMS power switches. Concerning the packaging, a technological roadmap indicates the different capabilities: thick film multilayer ceramic circuits, co-fired ceramics based on LTCC or HTCC processes, surfacemounted packages on printed circuits boards,and 3D architectures. The interconnection domain is also now more and more important in order to be compatible with the level of integration required for the microwave modules: fuzz buttons, flex, subminiature connectors. All these technologies mastered by Thales are dual for Airborne and Space, Military and Civilian applications.

A 39.7 dBm and 18.5% PAE compact X to Ku band GaN Travelling Wave Amplifier

This article presents an 8GHz to 18GHz Travelling Wave Amplifier (TWA) averaging 39.7dBm of output power and 18.5% Power Added Efficiency (PAE). At 11 GHz, the TWA reaches a peak output power 40.4dBm and a peak PAE of 22%. The proposed architecture consists in the combination of two TWAs in parallel to increase output power. An innovative low loss compact power combiner is proposed to reduce the overall die size and keep high PAE. The amplifier presented here has the advantage to be very compact compared to similar MMICs High Power Amplifiers (HPA). An innovative design methodology based on a strong correlation between the amplifier and the combiner design is introduced.

A compact fully integrated GaN high power amplifier for C-X band applications

A fully integrated two-stage power amplifier is described for 4-6 W saturated output power over a 4GHz to 11GHz frequency range. The PA topology is chosen to obtain the best bandwidth, output power and Power Added Efficiency (PAE). The output stage is composed of two unit power cells and the power recombination is made by a stacked balun. The differential input of the power stage is provided by the first stage which realized a single to differentiel conversion. The PA is designed and fabricated in a 0.25μm GaN integrated technology from UMS foundry. Both simulations and measurement results are presented. This GaN PA provides 38 dBm of maximum saturated power and 18% to 31% peak PAE in the 4GHz to 11GHz frequency range.

A compact wideband high power amplifier in GaN technology with 47% peak PAE

This article presents a 4-6GHz power amplifier in a 0.25μm GaN integrated technology from UMS foundry. Two unit power cells are combined to increase output power. A new power combiner based on a stacked balun is presented. It has the advantage of occupying a much smaller area than a conventional one. The measured circuit exhibits a peak output power of 37 dBm together with a peak PAE of 47% at 4GHz.

Nouveaux développements pour les antennes actives et les modules T/R

REE N°5/2015 79 RADARS A ANTENNES ELECTRONIQUES RADAR 2014 Nouveaux developpements pour les antennes actives et les modules T/R Par Yves Mancuso, Christian Renard Thales Airborne Systems (TSA) This paper presents new developments and perspectives in Phased Arrays Radars and Electronic Warfare for the next generations of T/R modules (medium/long term), in order to decrease the mass production cost, while increasing the level of performance and reliability. In terms of physical architecture, even if the brick type is more commonly used on mid-term, the tile concept is investigated for conformal and/or multifunction phased array antennas: a 3-dimension module will lead to a drastic reduction of size and weight of the antenna. MMICs are always the key components, with evolutions towards multifunction chips, new processes like GaN, SiGe, MEMS power switches. Concerning the packaging, a technological roadmap indicates the different capabilities: thick film multilayer ceramic circuits, co-fired ceramics based on LTCC or HTCC processes, surface-mounted packages on printed circuits boards and 3D architectures. The interconnection domain is becoming now more and more important in order t

Dual-mode power amplifier module with in-band reconfigurable output power for multifunctional radar and radio communication systems

This paper presents a concept of dual-mode power amplifier (PA) module with in-band reconfigurable gain and output power. In the first mode, a wideband PA delivers a medium output power. This operational mode is particularly appropriate for ultra-wideband or multi-standard radio communication. In the second mode, a high power amplifier is turned on in order to deliver a high power signal within a sub-band for enhanced radar operation. This second mode allows both amplifiers to operate simultaneously in order to provide continuous service in sidebands. To demonstrate this concept, a network integrating a wideband medium output power PA and a narrowband high power PA is proposed. Both PA are based on low cost SiGe technology and optimized for maximum output power and Power Added Efficiency (PAE) in their operating frequency range. Simulated and measured results of a Printed Circuit Board (PCB) demonstrator validate the concept. The proposed sub-system would be of a great interest for multifunctional radar and radio communication systems.

Compact reconfigurable ceramic filter based on combline type 3-D resonators

In this paper compact ceramic filters, based on the principle of combline filters, are proposed. These filters offer a very good tradeoff between size and performances while offering a wide spurious free region. Two different filters are proposed here: a fixed frequency (X-band) and a tunable 5 pole Chebyshev. The expected frequency coverage is close to 56% f0.

A 2.4GHz to 6GHz active balun in GaN technology

This article presents a S-C band active balun in a GaN integrated technology. Based on a differential pair this circuit realizes the single to differential conversion. Moreover this circuit can be used as preamplifier to drive a power stage. It delivers more than 25dBm in each differential path in the [2,4GHz-6GHz] band with a maximum of 29dBm at 3.8GHz. The chip has been realized in the UMS GH25 process, a GaN HEMT technology with a 0.25μm gate length.