Z. Q. Xie

Fast growth of graphene patterns by laser direct writing

Rapid single-step fabrication of graphene patterns was developed using laser-induced chemical vapor deposition (LCVD). A laser beam irradiates a thin nickel foil in a CH4 and H2 environment to induce a local temperature rise, thereby allowing the direct writing of graphene patterns in precisely controlled positions at room temperature. Line patterns can be achieved with a single scan without pre- or postprocesses. Surprisingly, the growth rate is several thousand times faster than that of general CVD methods. The discovery and development of the LCVD growth process provide a route for the rapid fabrication of graphene patterns for various applications.

Single‐Step Formation of Graphene on Dielectric Surfaces

The direct formation of graphene on various dielectric surfaces is successful via a single-step rapid thermal processing (RTP) of substrates coated with amorphous carbon (C) and nickel (Ni) thin films. High-quality graphene is obtained uniformly on the whole surface of wafers with a controlled number of graphene layers. The monolayer graphene exhibits a low sheet resistance and a high optical transmittance in the visible range.

Accuracy improvement of quantitative analysis by spatial confinement in laser-induced breakdown spectroscopy

To improve the accuracy of quantitative analysis in laser-induced breakdown spectroscopy, the plasma produced by a Nd:YAG laser from steel targets was confined by a cavity. A number of elements with low concentrations, such as vanadium (V), chromium (Cr), and manganese (Mn), in the steel samples were investigated. After the optimization of the cavity dimension and laser fluence, significant enhancement factors of 4.2, 3.1, and 2.87 in the emission intensity of V, Cr, and Mn lines, respectively, were achieved at a laser fluence of 42.9 J/cm(2) using a hemispherical cavity (diameter: 5 mm). More importantly, the correlation coefficient of the V I 440.85/Fe I 438.35 nm was increased from 0.946 (without the cavity) to 0.981 (with the cavity); and similar results for Cr I 425.43/Fe I 425.08 nm and Mn I 476.64/Fe I 492.05 nm were also obtained. Therefore, it was demonstrated that the accuracy of quantitative analysis with low concentration elements in steel samples was improved, because the plasma became uniform with spatial confinement. The results of this study provide a new pathway for improving the accuracy of quantitative analysis of LIBS.

Detection of trace phosphorus in steel using laser-induced breakdown spectroscopy combined with laser-induced fluorescence

Monitoring of light-element concentration in steel is very important for quality assurance in the steel industry. In this work, detection in open air of trace phosphorus (P) in steel using laser-induced breakdown spectroscopy (LIBS) combined with laser-induced fluorescence (LIF) has been investigated. An optical parametric oscillator wavelength-tunable laser was used to resonantly excite the P atoms within plasma plumes generated by a Q-switched Nd:YAG laser. A set of steel samples with P concentrations from 3.9 to 720 parts in 10(6) (ppm) were analyzed using LIBS-LIF at wavelengths of 253.40 and 253.56 nm for resonant excitation of P atoms and fluorescence lines at wavelengths of 213.55 and 213.62 nm. The calibration curves were measured to determine the limit of detection for P in steel, which is estimated to be around 0.7 ppm. The results demonstrate the potential of LIBS-LIF to meet the requirements for on-line analyses in open air in the steel industry.

Transparent interconnections formed by rapid single-step fabrication of graphene patterns

We developed a process to form transparent interconnections using graphene patterns that were synthesized by laser chemical vapor deposition. The number of graphene layers was tightly controlled by laser scan speed. Graphene patterns were fabricated at a high scan speed of up to 200 μm/s with a single-step process. The process time is about a million times faster than the conventional chemical vapor deposition method. The fabricated graphene patterns on nickel foils were directly transferred to desired positions on patterned electrodes. The position-controlled transfer with rapid single-step fabrication of graphene patterns provides an innovative pathway for graphene-based interconnections.

Influence of WC-Co Substrate Pretreatment on Diamond Film Deposition by Laser-Assisted Combustion Synthesis

The quality of diamond films deposited on cemented tungsten carbide substrates (WC-Co) is limited by the presence of the cobalt binder. The cobalt in the WC-Co substrates enhances the formation of nondiamond carbon on the substrate surface, resulting in a poor film adhesion and a low diamond quality. In this study, we investigated pretreatments of WC-Co substrates in three different approaches, namely, chemical etching, laser etching, and laser etching followed by acid treatment. The laser produces a periodic surface pattern, thus increasing the roughness and releasing the stress at the interfaces between the substrate and the grown diamond film. Effects of these pretreatments have been analyzed in terms of microstructure and cobalt content. Raman spectroscopy was conducted to characterize both the diamond quality and compressive residual stress in the films.

Stress and phase purity analyses of diamond films deposited through laser-assisted combustion synthesis

Diamond films were deposited on silicon and tungsten carbide substrates in open air through laser-assisted combustion synthesis. Laser-induced resonant excitation of ethylene molecules was achieved in the combustion process to promote diamond growth rate. In addition to microstructure study by scanning electron microscopy, Raman spectroscopy was used to analyze the phase purity and residual stress of the diamond films. High-purity diamond films were obtained through laser-assisted combustion synthesis. The levels of residual stress were in agreement with corresponding thermal expansion coefficients of diamond, silicon, and tungsten carbide. Diamond-film purity increases while residual stress decreases with an increasing film thickness. Diamond films deposited on silicon substrates exhibit higher purity and lower residual stress than those deposited on tungsten carbide substrates.

Enhanced chemical vapor deposition of diamond by wavelength-matched vibrational excitations of ethylene molecules using tunable CO2 laser irradiation

Wavelength-matched vibrational excitations of ethylene (C2H4) molecules using a tunable carbon dioxide (CO2) laser were employed to significantly enhance the chemical vapor deposition (CVD) of diamond in open air using a precursor gas mixture of C2H4, acetylene (C2H2), and oxygen (O2). The CH2-wag vibration mode (ν7) of the C2H4 molecules was selected to achieve the resonant excitation in the CVD process. Both laser wavelengths of 10.591 and 10.532 μm were applied to the CVD processes to compare the C2H4 excitations and diamond depositions. Compared with 10.591 μm produced by common CO2 lasers, the laser wavelength of 10.532 μm is much more effective to excite the C2H4 molecules through the CH2-wag mode. Under the laser irradiation with a power of 800 W and a wavelength of 10.532 μm, the grain size in the deposited diamond films was increased by 400% and the film thickness was increased by 300%. The quality of the diamond crystals was also significantly enhanced.

Laser-induced resonant excitation of ethylene molecules in C2H4/C2H2/O2 reactions to enhance diamond deposition

Vibrational resonant excitation of ethylene (C2H4) molecules using a carbon dioxide laser was employed to promote reactions in precursors of ethylene, acetylene (C2H2), and oxygen to enhance diamond deposition. One of the vibrational modes (CH2 wag mode, v7) of the C2H4 molecules was selected to achieve the resonant excitation in the reactions. Optical emission spectroscopy was used to study the effects of laser resonant excitation on the reactions for diamond deposition. The optical emissions of CH and C2 species were enhanced with the laser excitation, indicating that there are more active species generated in the reactions. Thicknesses and grain sizes of the deposited films were increased correspondingly. Temperature calculations from the line set in the R-branch of CH emission spectra indicated that a nonthermal process is involved in the enhanced diamond deposition.

Control of crystallographic orientation in diamond synthesis through laser resonant vibrational excitation of precursor molecules

Crystallographic orientations determine the optical, electrical, mechanical, and thermal properties of crystals. Control of crystallographic orientations has been studied by changing the growth parameters, including temperature, pressure, proportion of precursors, and surface conditions. However, molecular dynamic mechanisms underlying these controls remain largely unknown. Here we achieved control of crystallographic orientations in diamond growth through a joint experimental and theoretical study of laser resonant vibrational excitation of precursor molecules (ethylene). Resonant vibrational excitation of the ethylene molecules using a wavelength-tunable CO2 laser steers the chemical reactions and promotes proportion of intermediate oxide species, which results in preferential growth of {100}-oriented diamond films and diamond single crystals in open air. Quantum molecular dynamic simulations and calculations of chemisorption energies of radicals detected from our mass-spectroscopy experiment provide an in-depth understanding of molecular reaction mechanisms in the steering of chemical reactions and control of crystallographic orientations. This finding opens up a new avenue for controlled chemical vapor deposition of crystals through resonant vibrational excitations to steer surface chemistry.