Zan Dong

Multifunctional silicon-based light emitting device in standard complementary metal–oxide–semiconductor technology

A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 „m complementary metal{oxide{semiconductor technology. This device is capable of versatile working modes: it can emit visible to near infra-red (NIR) light (the spectrum ranges from 500 nm to 1000 nm) in reverse bias avalanche breakdown mode with working voltage between 8.35 V{12 V and emit NIR light (the spectrum ranges from 900 nm to 1300 nm) in the forward injection mode with working voltage below 2 V. An apparent modulation efiect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in difierent modes are measured and compared. The mechanisms behind these difierent emissions are explored.

Monolithic integration of light emitting diodes, photodetector and receiver circuit in standard CMOS technology

A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) is designed and fabricated with standard 0.35 ¿m CMOS technology. This OEIC circuit consists of light emitting diodes (LED), silicon dioxide waveguide, photodiodes and receiver circuit. The silicon LED operates in reverse breakdown mode and can be turned on at 8.5 V 10 mA. The silicon dioxide waveguide is composed of multiple layers of silicon dioxide between different metals layers. A two PN-junctions photodetector composed of n-well/p-substrate junction and p+ active implantation/n-well junction maximizes the depletion region width. The readout circuitry in pixels is exploited to handle as small as 0.1 nA photocurrent. Simulation and testing results show that the optical emissions powers are about two orders higher than the low frequency detectivity of silicon CMOS photodetector and receiver circuit.

A low-voltage two-wavelength light emitter in standard CMOS technology

A silicon light emitting device is fabricated in standard CMOS technology. It can emit visible light under reverse Zener breakdown and emit near infrared light under forward injection, both with low-voltage operation and enhanced efficiency.

CMOS image sensor with optimal video sampling scheme

Time-varying illumination on the focal plane is a three-dimensional signal. Multidimensional sampling theory proves that the temporal resolution can be optimally improved by a factor of

Schottky barrier light emitting diode in standard CMOS technology

\sqrt 2

Low threshold voltage light-emitting diode in silicon-based standard CMOS technology

while the spatial resolution is reserved by changing the sampling scheme. Based on the theory, a prototype multi-field CMOS image sensor (CIS) is designed for a 0.35-μm 2P4M CMOS process. Corresponding pixels in 4×4-pixel clusters are assembled into 16 fields over the whole array. Control pins (resets and shutters) of pixels are separated which provides the ability of sampling the illumination with the optimal sampling scheme.

Silicon-based LED display array in standard CMOS technology

A novel silicon light emitting diode (LED) display array has been fabricated using 0.35 μm standard CMOS technology. In this array, an LED and static random access memory (SRAM) are integrated together in a special layout. The SRAM in each pixel can store the state of the pixel and ensure that the pixel remains lit without persistent flashing. As a result, the control logic is perfectly integrated on the same wafer. Two power sources are used to drive the display array because the LEDs operate at high voltage (supply voltage of 9 V), and the current of the whole display array is about 30–60 mA to display common characters. The display circuit includes digital control logic circuits and SRAM, and requires a supply voltage of 3.3 V. The area of a single pixel is 40×40 μm2, the area of the whole 16×16 LED array is 1 mm2, and the display density is 630 dpi.

A monolithic integration optoelectronic integrated circuit in standard CMOS technology

Schottky barrier light emitting diode is designed and fabricated in CMOS technology. Stable Electro-luminescent emission is observed. The emission exhibits widespread spectral characteristics with nearly flatten peak in visible light range from 673nm to 785nm.