Zhang Deqing
Qiqihar University
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Publication
Featured researches published by Zhang Deqing.
Chinese Physics Letters | 2012
Lu Ran; Jiang Gen-shan; Li Bin; Zhao Quanliang; Zhang Deqing; Yuan Jie; Cao Mao-Sheng
We report the ferroelectric, dielectric and piezoelectric properties of a dense and crack-free lead zirconate titanate (Pb(Zr0.52Ti0.48)O3, PZT) thick film containing micro- and nano-crystalline particles. The results show that these electrical properties are dependent strongly on the annealing temperature and film thickness. For the different-annealing-temperature and different-thickness films, the higher-annealing-temperature thicker ones show the larger remnant polarization and smaller coercive field. The dielectric results show that relative dielectric constant achieves the largest value at annealing temperature of 700°C, and increases with the increasing film thickness. For the piezoelectric properties, the longitudinal piezoelectric coefficient increases linearly with the film thickness increasing and the 4-μm-thick PZT film shows the largest value of about 200.65 pC/N. Therefore, the PZT thick films present good electric properties and enlarged potential in MEMS applications.
Integrated Ferroelectrics | 2017
Yang Xiuying; Cheng Junye; Zhao Quanliang; Liu Hongmei; Zhang Deqing; Cao Mao-Sheng
ABSTRACT The present work focused on the study of morphology, crystalline structure and the ferroelectric properties of PZT thick film, which was modified with PZT nanoparticles and prepared by alternative spinning technique. The experimental results showed that the alternative spinning technique not only improved the film thickness, but also solved the problem on the membrane surface roughness of the thick film prepared by PZT 0–3 composite sol method. The results also confirmed that the electrical properties depended strongly on the annealing temperature and film thickness. With the increase of the annealing temperature, Pr increased and Ec changed inconspicuously. When the thickness of PZT thick film increased, Ec decreased but Pr increased. For the 4 µm-thick film, Ec and Pr were 23 kV/cm and 60 µC/cm2, respectively. These results suggest that the modified PZT thick film has a potential application on the fabrication of micro-devices because it provides good ferroelectricity, dielectricity and piezoelectricity.
Journal of Sol-Gel Science and Technology | 2007
Zhang Deqing; Wang Shao-jun; Sun Hong-Shan; Wang Xiu-Li; Cao Mao-Sheng
Archive | 2013
Yang Xiuying; Zhang Deqing; Ma Yuanyuan; Li Qingshan
Archive | 2014
Yang Xiuying; Zhang Deqing; Ma Yuanyuan; Li Qingshan
Archive | 2003
Zhang Deqing; Yang Xiuying; Liu Xijun
Archive | 2013
Cao Mao-Sheng; Wang Dawei; Yuan Jie; Wang Zhi-Ying; Zhang Deqing
Archive | 2014
Yang Xiuying; Zhang Deqing; Li Qingshan
Archive | 2014
Yang Xiuying; Zhang Deqing; Li Qingshan
Archive | 2013
Zhang Deqing; Zheng Fangyuan; Yang Xiuying; Zhang Hui; Feng Lianzhen; Cao Mao-Sheng