Zhang Sasa

Efficient Diode-End-Pumped Actively Q-Switched Nd:YLF/SrWO 4 Raman Laser

An efficient diode-end-pumped actively Q-switched Nd:YLF/SrWO4 Raman laser is demonstrated. The fundamental wave is 1047.0 nm and the corresponding first-Stocks wave is 1158.7 nm. With a pumping power of 10.5 W, the average output power of 2.2 W at 1158.7 nm is obtained, with the corresponding optical conversion efficiency of 20.9%. At a repetition rate of 6 kHz, the pulse width of the Raman laser is 8.7 ns and the peak power is calculated to be 42.1 kW. The beam quality factors M2 in horizontal and vertical directions are 1.3 and 1.5, respectively.

Structure and Photoluminescence of Polycrystalline MgxZn1−xO Films

Different photoluminescence (PL) spectra are observed for rf magnetron sputtered polycrystalline Mg0.25Zn0.75O and Mg0.37Zn0.63O films on silicon substrates when excited by different wavelengths. When the excitation wavelength is 280 nm, a UV emission peak at 370 nm and a blue peak at 462 nm are generated for the Mg0.25Zn0.75O film, and those two peaks for the Mg0.37Zn0.63O film shift to 366 nm and 466 nm, respectively. The wavelengths of the PL peaks are related to the excitation wavelength. The stronger peak is obtained in the blue band due to a large number of oxygen vacancies caused by excess Zn and Mg atoms, while the weaker peak is obtained in the ultraviolet band.