Zhanhai Yang
Chinese Academy of Sciences
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Publication
Featured researches published by Zhanhai Yang.
Physical Review X | 2015
Xiaochun Huang; Lingxiao Zhao; Yujia Long; Peipei Wang; Dong Chen; Zhanhai Yang; Hui Liang; Mianqi Xue; Hongming Weng; Zhong Fang; Xi Dai; Genfu Chen
Xiaochun Huang, Lingxiao Zhao, Yujia Long, Peipei Wang, Dong Chen, Zhanhai Yang, Hui Liang, Mianqi Xue, Hongming Weng, Zhong Fang, Xi Dai, and Genfu Chen Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China Collaborative Innovation Center of Quantum Matter, Beijing 100084, China (Received 14 May 2015; published 24 August 2015)
Advanced Materials | 2016
Mianqi Xue; Fengwang Li; Dong Chen; Zhanhai Yang; Xiaowei Wang; Junhui Ji
Highly oriented PPy nanotubes are grown by in situ vapor phase polymerization within a nanoscale template under low temperature. As-fabricated PPy nanotubes are used for gas sensing, where an ultralow detection limit (0.05 ppb) and very fast response are achieved. Such an in situ mass-productive method for synthesizing highly oriented conducting polymers may pave a new step toward next-generation gas sensors.
Advanced Materials | 2016
Xusheng Wang; Dong Chen; Zhanhai Yang; Xiaohui Zhang; Chao Wang; Jitao Chen; Xin-Xiang Zhang; Mianqi Xue
A novel layered SnSSe material is designed as a high-performance anode for sodium-ion batteries with characteristics of high capacity, superior cyclability, facile synthetic method, and large-scale production ability. The transformation from bulk SnSSe particles into closely packed nanoplate aggregates with greater resistance to structure pulverization and the partial pseudocapacitive capacity contribution may engender excellent cycling performance and rate capability.
ACS Nano | 2016
Zhanhai Yang; Hui Liang; Xusheng Wang; X.Q. Ma; Tao Zhang; Yanlian Yang; Liming Xie; Dong Chen; Yujia Long; Jitao Chen; Yunjie Chang; Chunhua Yan; Xinxiang Zhang; Xueji Zhang; Binghui Ge; Zhi-An Ren; Mianqi Xue; Genfu Chen
Two-dimensional (2D) chalcogenide materials are fundamentally and technologically fascinating for their suitable band gap energy and carrier type relevant to their adjustable composition, structure, and dimensionality. Here, we demonstrate the exfoliation of single-crystal SnS2-xSex (SSS) with S/Se vacancies into an atom-thin layer by simple sonication in ethanol without additive. The introduction of vacancies at the S/Se site, the conflicting atomic radius of sulfur in selenium layers, and easy incorporation with an ethanol molecule lead to high ion accessibility; therefore, atom-thin SSS flakes can be effectively prepared by exfoliating the single crystal via sonication. The in situ pyrolysis of such materials can further adjust their compositions, representing tunable activation energy, band gap, and also tunable response to analytes of such materials. As the most basic and crucial step of the 2D material field, the successful synthesis of an uncontaminated and atom-thin sample will further push ahead the large-scale applications of 2D materials, including, but not limited to, electronics, sensing, catalysis, and energy storage fields.
Chinese Physics Letters | 2017
Lingxiao Zhao; Xiaochun Huang; Yujia Long; Dong Chen; Hui Liang; Zhanhai Yang; Mianqi Xue; Zhi-An Ren; Hongming Weng; Zhong Fang; Xi Dai; Genfu Chen
There is a long-standing confusion concerning the physical origin of the anomalous resistivity peak in transition metal pentatelluride HfTe5. Several mechanisms, such as the formation of charge density wave or polaron, have been proposed, but so far no conclusive evidence has been presented. In this work, we investigate the unusual temperature dependence of magneto-transport properties in HfTe5. It is found that a three-dimensional topological Dirac semimetal state emerges only at around Tp (at which the resistivity shows a pronounced peak), as manifested by a large negative magnetoresistance. This accidental Dirac semimetal state mediates the topological quantum phase transition between the two distinct weak and strong topological insulator phases in HfTe5. Our work not only provides the first evidence of a temperature-induced critical topological phase transition in HfTe5 but also gives a reasonable explanation on the long-lasting question.
Journal of Power Sources | 2017
Xusheng Wang; Zhanhai Yang; Chao Wang; Dong Chen; Rui Li; Xinxiang Zhang; Jitao Chen; Mianqi Xue
Nanoscale | 2018
Xusheng Wang; Zhanhai Yang; Chao Wang; Luxiang Ma; Chunsong Zhao; Jitao Chen; Xin-Xiang Zhang; Mianqi Xue
Nanoscale | 2017
Xiaoling Zang; Xusheng Wang; Zhanhai Yang; Xiaowei Wang; Rui Li; Jitao Chen; Junhui Ji; Mianqi Xue
Advanced Functional Materials | 2017
Xiaoling Zang; Xiaowei Wang; Yuqian Jiang; Xusheng Wang; Zhanhai Yang; Jianwen Cong; Jitao Chen; Junhui Ji; Conghua Lu; Mianqi Xue
Journal of Superconductivity and Novel Magnetism | 2018
Zhanhai Yang; X.Q. Ma; Xusheng Wang; Xiaoling Zang; Yanlian Yang; Jitao Chen; Xinsheng Wang; Liming Xie; Xueji Zhang; Mianqi Xue