Zhao Qingtai

Mobility Enhancement and Gate-Induced-Drain-Leakage Analysis of Strained-SiGe Channel p-MOSFETs with Higher-κ LaLuO3 Gate Dielectric

A strained-SiGe p-channel metal-oxide-semiconductor-field-effect transistors (p-MOSFETS) with higher-κ LaLuO3 gate dielectric was fabricated and electrically characterized. The novel higher-κ (κ~30) gate dielectric, LaLuO3, was deposited by molecular-beam deposition and shows good quality for integration into the transistor. The transistor features good output and transfer characteristics. The hole mobility was extracted by the splitting C—V method and a value of 200cm2/Vs was obtained for strong inversion conditions, which indicates that the hole mobility is well enhanced by SiGe channel and that the LaLuO3 layer does not induce additional significant carrier scattering. Gate induced drain leakage is measured and analyzed by using an analytical model. Band-to-band tunneling efficiencies under high and low fields are found to be different, and the tunneling mechanism is discussed.

Tilted Angle Implantation of Xe Ions in potassium Titanyl Phosphate

200 ke V Xe ions were implanted in potassium titanyl phosphate (KTP) at deferent angles: 0°, 45° and 60°. The lateral spread of Xe ions in KTP was studied by Rutherford backscattering of 2.1 Me V He ions. The result is compared with the theoretical prediction. The lateral spread is found in good agreement with calculated value within 17%.