Zheng You

Graphene fixed-end beam arrays based on mechanical exfoliation

A low-cost mechanical exfoliation method is presented to transfer graphite to graphene for free-standing beam arrays. Nickel film or photoresist is used to peel off and transfer patterned single-layer or multilayer graphene onto substrates with macroscopic continuity. Free-standing graphene beam arrays are fabricated on both silicon and polymer substrates. Their mechanical properties are studied by atomic force microscopy. Finally, a graphene based radio frequency switch is demonstrated, with its pull-in voltage and graphene-silicon junction investigated.

Graphene cantilever beams for nano switches

A method named sacrificial beam is presented to fabricate graphene cantilever devices. The mechanical properties of graphene cantilevers are studied using atomic force microscopy. Graphene cantilever based 2-terminal nano-electro-mechanical systems switches are demonstrated, and their DC characteristics and switch performance are investigated. A 3-terminal switch based on a graphene cantilever is fabricated, and its electrical properties are also studied.

Raman spectrum method for characterization of pull-in voltages of graphene capacitive shunt switches

An approach using Raman spectrum method is reported to measure pull-in voltages of graphene capacitive shunt switches. When the bias excesses the pull-in voltage, the Raman spectrums intensity largely decreases. Two factors that contribute to the intensity reduction are investigated. Moreover, by monitoring the frequency shift of G peak and 2D band, we are able to detect the pull-in voltage and measure the strain change in graphene beams during switching.

Molybdenum disulfide dc contact MEMS shunt switch

Atomic force microscopy pulsed force mode verifies that molybdenum disulfide (MoS2) has a smaller surface adhesion energy than graphene. MEMS switches based on MoS2?may have less stiction problems. Suspended MoS2?two-end fixed beams were fabricated, and their mechanical properties including Youngs modulus were characterized by atomic force microscope (AFM) indentation. MoS2?dc contact MEMS (micro-electro-mechanical systems) switches were demonstrated with a pull-in voltage of less than 10?V.

A Lithography‐Free and Field‐Programmable Photonic Metacanvas

The unique correspondence between mathematical operators and photonic elements in wave optics enables quantitative analysis of light manipulation with individual optical devices. Phase-transition materials are able to provide real-time reconfigurability of these devices, which would create new optical functionalities via (re)compilation of photonic operators, as those achieved in other fields such as field-programmable gate arrays (FPGA). Here, by exploiting the hysteretic phase transition of vanadium dioxide, an all-solid, rewritable metacanvas on which nearly arbitrary photonic devices can be rapidly and repeatedly written and erased is presented. The writing is performed with a low-power laser and the entire process stays below 90 °C. Using the metacanvas, dynamic manipulation of optical waves is demonstrated for light propagation, polarization, and reconstruction. The metacanvas supports physical (re)compilation of photonic operators akin to that of FPGA, opening up possibilities where photonic elements can be field programmed to deliver complex, system-level functionalities.

Stress compensation for arbitrary curvature control in vanadium dioxide phase transition actuators

Due to its thermally driven structural phase transition, vanadium dioxide (VO2) has emerged as a promising material for micro/nano-actuators with superior volumetric work density, actuation amplitude, and repetition frequency. However, the high initial curvature of VO2 actuators severely obstructs the actuation performance and application. Here, we introduce a “seesaw” method of fabricating tri-layer cantilevers to compensate for the residual stress and realize nearly arbitrary curvature control of VO2 actuators. By simply adjusting the thicknesses of the individual layers, cantilevers with positive, zero, or negative curvatures can be engineered. The actuation amplitude can be decoupled from the curvature and controlled independently as well. Based on the experimentally measured residual stresses, we demonstrate sub-micron thick VO2 actuators with nearly zero final curvature and a high actuation amplitude simultaneously. This “seesaw” method can be further extended to the curvature engineering of other microelectromechanical system multi-layer structures where large stress-mismatch between layers are inevitable.

A multifunctional micro-electro-opto-mechanical (MEOM) platform based on phase-transition materials

Along with the rapid development of hybrid electronic-photonic systems, multifunctional devices with dynamic responses have been widely investigated for improving many optoelectronic applications. For years, microelectro-opto-mechanical systems (MEOMS), one of the major approaches to realizing multifunctionality, have demonstrated profound reconfigurability and great reliability. However, modern MEOMS still suffer from limitations in modulation depth, actuation voltage, or miniaturization. Here, we demonstrate a new MEOMS multifunctional platform with greater than 50% optical modulation depth over a broad wavelength range. This platform is realized by a specially designed cantilever array, with each cantilever consisting of vanadium dioxide, chromium, and gold nanolayers. The abrupt structural phase transition of the embedded vanadium dioxide enables the reconfigurability of the platform. Diverse stimuli, such as temperature variation or electric current, can be utilized to control the platform, promising CMOS-compatible operating voltage. Multiple functionalities, including an active enhanced absorber and a reprogrammable electro-optic logic gate, are experimentally demonstrated to address the versatile applications of the MEOMS platform in fields such as communication, energy harvesting, and optical computing.

A 0.2 V Micro-Electromechanical Switch Enabled by a Phase Transition

Micro-electromechanical (MEM) switches, with advantages such as quasi-zero leakage current, emerge as attractive candidates for overcoming the physical limits of complementary metal-oxide semiconductor (CMOS) devices. To practically integrate MEM switches into CMOS circuits, two major challenges must be addressed: sub 1 V operating voltage to match the voltage levels in current circuit systems and being able to deliver at least millions of operating cycles. However, existing sub 1 V mechanical switches are mostly subject to significant body bias and/or limited lifetimes, thus failing to meet both limitations simultaneously. Here 0.2 V MEM switching devices with ≳106 safe operating cycles in ambient air are reported, which achieve the lowest operating voltage in mechanical switches without body bias reported to date. The ultralow operating voltage is mainly enabled by the abrupt phase transition of nanolayered vanadium dioxide (VO2 ) slightly above room temperature. The phase-transition MEM switches open possibilities for sub 1 V hybrid integrated devices/circuits/systems, as well as ultralow power consumption sensors for Internet of Things applications.

All-Silicon Broadband Ultraviolet Metasurfaces

Featuring high photon energy and short wavelength, ultraviolet (UV) light enables numerous applications such as high-resolution imaging, photolithography, and sensing. In order to manipulate UV light, bulky optics are usually required, and hence do not meet the fast-growing requirements of integration in compact systems. Recently, metasurfaces have shown unprecedented control of light, enabling substantial miniaturization of photonic devices from terahertz to visible regions. However, material challenges have hampered the realization of such functionalities at shorter wavelengths. Herein, it is experimentally demonstrated that all-silicon (Si) metasurfaces with thicknesses of only one-tenth of the working wavelength can be designed and fabricated to manipulate broadband UV light with efficiencies comparable to plasmonic metasurface performance in infrared (IR). Also, for the first time, photolithography enabled by metasurface-generated UV holograms is shown. Such performance enhancement is attributed to increased scattering cross sections of Si antennas in the UV range, which is adequately modeled via a circuit. The new platform introduced here will deepen the understanding of light-matter interactions and introduce even more material options to broadband metaphotonic applications, including those in integrated photonics and holographic lithography technologies.