Zhiyuan Ning

Superlubricity in centimetres-long double-walled carbon nanotubes under ambient conditions

Friction and wear are two main causes of mechanical energy dissipation and component failure, especially in micro/nanomechanical systems with large surface-to-volume ratios. In the past decade there has been an increasing level of research interest regarding superlubricity, a phenomenon, also called structural superlubricity, in which friction almost vanishes between two incommensurate solid surfaces. However, all experimental structural superlubricity has been obtained on the microscale or nanoscale, and predominantly under high vacuum. Here, we show that superlubricity can be realized in centimetres-long double-walled carbon nanotubes (DWCNTs) under ambient conditions. Centimetres-long inner shells can be pulled out continuously from such nanotubes, with an intershell friction lower than 1 nN that is independent of nanotube length. The shear strength of the DWCNTs is only several pascals, four orders of magnitude lower than the lowest reported value in CNTs and graphite. The perfect structure of the ultralong DWCNTs used in our experiments is essential for macroscale superlubricity.

High-performance photodetectors for visible and near-infrared lights based on individual WS2 nanotubes

We propose that a photodetector based on nanotubes formed from layered structure may have a faster response than nanowires or nanobelts. The layered compound tungsten disulfide (WS2) can absorb visible and near-infrared lights. We fabricated photodetectors based on individual WS2 nanotubes. The photodetectors exhibited a remarkable response to excitation with 633 and 785 nm light. The nanotube-based photodetectors exhibited short rise and decay times of a few hundred μs, high on/off ratio, and high spectral responsivity and external quantum efficiency. Our results imply that WS2 nanotubes are prospective candidates for high-performance nanoscale optoelectronic devices.

Electrical transport properties of individual WS2 nanotubes and their dependence on water and oxygen absorption

The electrical properties of WS2 nanotubes (NTs) were studied through measuring 59 devices. Important electrical parameters, such as the carrier concentration, mobility, and effective barrier height at the contacts, were obtained through fitting experimental non-linear I-V curves using a metal-semiconductor-metal model. The carrier mobility was found to be several orders of magnitude higher than that have been reported previously for WS2 NTs. Water absorption was found to decrease the conductivity and carrier mobility of the NTs, and could be removed when the sample was dried. Oxygen absorption also slightly decreased the conductivity of WS2 NTs.

Interwall Friction and Sliding Behavior of Centimeters Long Double-Walled Carbon Nanotubes

Here, we studied the interwall friction and sliding behaviors of double-walled carbon nanotubes (DWCNTs). The interwall friction shows a linear dependence on the pullout velocity of the inner wall. The axial curvature in DWCNTs causes the significant increase of the interwall friction. The axial curvature also affects the sliding behavior of the inner wall. Compared with the axial curvature, the opening ends of DWCNTs play tiny roles in their interwall friction.

Transversally and axially tunable carbon nanotube resonators in situ fabricated and studied inside a scanning electron microscope.

We report a new design of carbon nanotube (CNT) resonator, whose resonance frequency can be tuned not only transversally by a gate voltage, but also by the axial strain applied through directly pulling the CNT. The resonators are fabricated from individual suspended single-walled CNT (SWCNT) in situ inside a scanning electron microscope. The resonance frequency of a SWCNT resonator can be tuned by more than 20 times with an increase of quality factor when the axial strain of the SWCNT is only increased from nearly zero to 2% at room temperature. The transversal gate-tuning ability is found to be weaker than the axial-tuning ability and decrease with increasing the axial strain. The gate voltage can hardly tune the resonance frequency when the initial axial strain is larger than 0.35% and the CNT acts like a tied string. The relationship among resonance frequency, gate voltage, and initial axial strain of the CNT obtained presently will allow for the designs of CNT resonators with high frequency and large tuning range. The present resonator also shows ultrahigh sensitivity in displacement and force detection, with a resolution being better than 2.4 pm and 0.55 pN, respectively.

Mechanical properties of individual InAs nanowires studied by tensile tests

Mechanical properties of individual InAs nanowires (NWs) synthesized by metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) methods are studied by in-situ tensile tests in a scanning electron microscope and their fracture strength and Youngs modulus are obtained. The two types of NWs both exhibit brittle fracture with a maximum elastic strain up to ∼10%. Their fracture strength distributes in a similar range of ∼2–5 GPa with a general trend of increasing with NW volume decrease, which is well described by Weibull statistic with a smaller Weibull modulus and a higher characteristic strength for MOCVD NWs. Youngs modulus is determined to be 16–78 GPa with an average value of 45 GPa and no dependence on NW diameter for MOCVD NWs and 34–79 GPa with an average value of 58 GPa for MBE NWs.

Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires

We report a systematic study on the correlation of the electrical transport properties with the crystal phase and orientation of single-crystal InAs nanowires (NWs) grown by molecular-beam epitaxy. A new method is developed to allow the same InAs NW to be used for both the electrical measurements and transmission electron microscopy characterization. We find both the crystal phase, wurtzite (WZ) or zinc-blende (ZB), and the orientation of the InAs NWs remarkably affect the electronic properties of the field-effect transistors based on these NWs, such as the threshold voltage (VT), ON-OFF ratio, subthreshold swing (SS) and effective barrier height at the off-state (ΦOFF). The SS increases while VT, ON-OFF ratio, and ΦOFF decrease one by one in the sequence of WZ ⟨0001⟩, ZB ⟨131⟩, ZB ⟨332⟩, ZB ⟨121⟩, and ZB ⟨011⟩. The WZ InAs NWs have obvious smaller field-effect mobility, conductivities, and electron concentration at VBG = 0 V than the ZB InAs NWs, while these parameters are not sensitive to the orientation of the ZB InAs NWs. We also find the diameter ranging from 12 to 33 nm shows much less effect than the crystal phase and orientation on the electrical transport properties of the InAs NWs. The good ohmic contact between InAs NWs and metal remains regardless of the variation of the crystal phase and orientation through temperature-dependent measurements. Our work deepens the understanding of the structure-dependent electrical transport properties of InAs NWs and provides a potential way to tailor the device properties by controlling the crystal phase and orientation of the NWs.

A platform for in-situ multi-probe electronic measurements and modification of nanodevices inside a transmission electron microscope

We developed a new platform that enables in-situ four-probe electronic measurements, in-situ three-probe field-effect measurements, nanomanipulation, and in-situ modification of nanodevices inside a transmission electron microscope (TEM). The platform includes a specially designed chip-holder and a silicon (Si) chip with suspended metal electrodes. The chip-holder can hold one Si chip with a size up to 3 mm × 3 mm and provides four electrical connections that can be connected to the micrometer-sized electrodes on the Si chip by wire-bonding. The other side of the electrical connections on the chip-holder is connected to the electronic instruments outside the TEM through a commercial Nanofactory SPM-TEM holder. The Si chip with suspended metal electrodes on one of its edges was fabricated by lithography and wet etching. Carbon nanotubes (CNTs), InAs nanowires, and tungsten disulfide nanowires were placed to stride over and connect to the suspended electrodes on the Si chip by nanomanipulations inside a scanning electron microscope (SEM). By using the platform, I-V curves of an individual single-walled CNT connecting to four electrodes were in-situ measured between any two of the four suspended electrodes, and a high-resolution TEM image of the same CNT was obtained. Furthermore, four-terminal I-V measurement on an InAs nanowire was achieved on this platform, and with a movable probe used as a gate electrode, field-effect measurement on the same InAs nanowire device was accomplished in SEM. In addition, by using the movable probe on the SPM-TEM holder, we could further in-situ modify nanomaterial and nanodevices. The present work demonstrates a method that allows a direct correlation between the atomic-level structure and the electronic property of nanomaterials or nanodevices whose structure can be further modified in-situ.

In situ multiproperty measurements of individual nanomaterials in SEM and correlation with their atomic structures.

The relationship between property and structure is one of the most important fundamental questions in the field of nanomaterials and nanodevices. Understanding the multiproperties of a given nano-object also aids in the development of novel nanomaterials and nanodevices. In this paper, we develop for the first time a comprehensive platform for in situ multiproperty measurements of individual nanomaterials using a scanning electron microscope (SEM). Mechanical, electrical, electromechanical, optical, and photoelectronic properties of individual nanomaterials, with lengths that range from less than 200 nm to 20 μm, can be measured in situ with an SEM on the platform under precisely controlled single-axial strain and environment. An individual single-walled carbon nanotube (SWCNT) was measured on the platform. Three-terminal electronic measurements in a field effect transistor structure showed that the SWCNT was semiconducting and agreed with the structure characterization by transmission electron microscopy after the in situ measurements. Importantly, we observed a bandgap increase of this SWCNT with increasing axial strain, and for the first time, the experimental results quantitatively agree with theoretical predictions calculated using the chirality of the SWCNT. The vibration performance of the SWCNT, a double-walled CNT, and a triple-walled CNT were also studied as a function of axial strain, and were proved to be in good agreement with classical beam theory, although the CNTs only have one, two, or three atomic layers, respectively. Our platform has wide applications in correlating multiproperties of the same individual nanostructures with their atomic structures.