Zhongfan Liu

Can graphene be used as a substrate for Raman enhancement

Graphene is a monolayer of carbon atoms packed into a two-dimensional (2D) honeycomb crystal structure, which is a special material with many excellent properties. In the present study, we will discuss the possibility that graphene can be used as a substrate for enhancing Raman signals of adsorbed molecules. Here, phthalocyanine (Pc), rhodamine 6G (R6G), protoporphyin IX (PPP), and crystal violet (CV), which are popular molecules widely used as a Raman probe, are deposited equally on graphene and a SiO(2)/Si substrate using vacuum evaporation or solution soaking. By comparing the Raman signals of molecules on monolayer graphene and on a SiO(2)/Si substrate, we observed that the intensities of the Raman signals on monolayer graphene are much stronger than on a SiO(2)/Si substrate, indicating a clear Raman enhancement effect on the surface of monolayer graphene. For solution soaking, the Raman signals of the molecules are visible even though the concentration is low to 10(-8) mol/L or less. Whats more interesting, the enhanced efficiencies are quite different on monolayer, few-layer, multilayer graphene, graphite, and highly ordered pyrolytic graphite (HOPG). The Raman signals of molecules on multilayer graphene are even weaker than on a SiO(2)/Si substrate, and the signals are even invisible on graphite and HOPG. Taking the Raman signals on the SiO(2)/Si substrate as a reference, Raman enhancement factors on the surface of monolayer graphene can be obtained using Raman intensity ratios. The Raman enhancement factors are quite different for different peaks, changing from 2 to 17. Furthermore, we found that the Raman enhancement factors can be distinguished through three classes that correspond to the symmetry of vibrations of the molecule. We attribute this enhancement to the charge transfer between graphene and the molecules, which result in a chemical enhancement. This is a new phenomenon for graphene that will expand the application of graphene to microanalysis and is good for studying the basic properties of both graphene and SERS.

Synthesis of Nitrogen‐Doped Graphene Using Embedded Carbon and Nitrogen Sources

Graphene is the two-dimensional crystalline form of carbon whose extraordinary charge carrier mobility and other unique features hold great promise for nanoscale electronics. [ 1 ] Because graphene has no bandgap, however, its electrical conductivity cannot be completely controlled like classical semiconductor. Theoretical and experimental studies on graphene doping show the possibility of opening the bandgap and modulating conducting types by substituting carbon atoms with foreign atoms. [ 2 ] Graphene is easily p-doped by adsorbates like physisorbed oxygen molecules, but complementary doping (both n-type and p-type doping) is essential for functional device applications like complementary metal-oxidesemiconductor (CMOS) circuits. [ 3 ] Recently, a number of approaches have been proposed to synthesize nitrogen-doped graphene (NG), such as chemical vapor deposition (CVD), [ 2 a, 4 ] arc-discharge, [ 2 b, 5 ] and post treatments. [ 6 ] Here, we report a new approach which makes use of embedded nitrogen and carbon atoms in metal substrate to prepare NG. As doping is accompanied with the combination of carbon atoms into graphene during annealing process, N atoms can be substitutionally doped into the graphene lattice. Our method provides not only a better control over the doping density but also a potential advantage to precisely control the solid dopants at desired locations to achieve patterned doping. Our approach for NG synthesis is actually the enthusiastic utilization of the very common segregation phenomenon to turn the trace amount of carbon and nitrogen dissolved in bulk metals into NG. [ 7 ] Metals usually contain a trace amount of carbon impurities, which could be brought into evaporated metal fi lm during the electron beam deposition process. [7a, 8 ]

Controlled Growth of High-Quality Monolayer WS2 Layers on Sapphire and Imaging Its Grain Boundary

Atomically thin tungsten disulfide (WS2), a structural analogue to MoS2, has attracted great interest due to its indirect-to-direct band-gap tunability, giant spin splitting, and valley-related physics. However, the batch production of layered WS2 is underdeveloped (as compared with that of MoS2) for exploring these fundamental issues and developing its applications. Here, using a low-pressure chemical vapor deposition method, we demonstrate that high-crystalline mono- and few-layer WS2 flakes and even complete layers can be synthesized on sapphire with the domain size exceeding 50 × 50 μm(2). Intriguingly, we show that, with adding minor H2 carrier gas, the shape of monolayer WS2 flakes can be tailored from jagged to straight edge triangles and still single crystalline. Meanwhile, some intersecting triangle shape flakes are concomitantly evolved from more than one nucleus to show a polycrystalline nature. It is interesting to see that, only through a mild sample oxidation process, the grain boundaries are easily recognizable by scanning electron microscopy due to its altered contrasts. Hereby, controlling the initial nucleation state is crucial for synthesizing large-scale single-crystalline flakes. We believe that this work would benefit the controlled growth of high-quality transition metal dichalcogenide, as well as in their future applications in nanoelectronics, optoelectronics, and solar energy conversions.

Surface enhanced Raman spectroscopy on a flat graphene surface

Surface enhanced Raman spectroscopy (SERS) is an attractive analytical technique, which enables single-molecule sensitive detection and provides its special chemical fingerprints. During the past decades, researchers have made great efforts towards an ideal SERS substrate, mainly including pioneering works on the preparation of uniform metal nanostructure arrays by various nanoassembly and nanotailoring methods, which give better uniformity and reproducibility. Recently, nanoparticles coated with an inert shell were used to make the enhanced Raman signals cleaner. By depositing SERS-active metal nanoislands on an atomically flat graphene layer, here we designed a new kind of SERS substrate referred to as a graphene-mediated SERS (G-SERS) substrate. In the graphene/metal combined structure, the electromagnetic “hot” spots (which is the origin of a huge SERS enhancement) created by the gapped metal nanoislands through the localized surface plasmon resonance effect are supposed to pass through the monolayer graphene, resulting in an atomically flat hot surface for Raman enhancement. Signals from a G-SERS substrate were also demonstrated to have interesting advantages over normal SERS, in terms of cleaner vibrational information free from various metal-molecule interactions and being more stable against photo-induced damage, but with a comparable enhancement factor. Furthermore, we demonstrate the use of a freestanding, transparent and flexible “G-SERS tape” (consisting of a polymer-layer-supported monolayer graphene with sandwiched metal nanoislands) to enable direct, real time and reliable detection of trace amounts of analytes in various systems, which imparts high efficiency and universality of analyses with G-SERS substrates.

Graphene as a Substrate To Suppress Fluorescence in Resonance Raman Spectroscopy

We have measured resonance Raman spectra with greatly suppressed fluorescence (FL) background from rhodamine 6G (R6G) and protoporphyrin IX (PPP) adsorbed on graphene. The FL suppression is estimated to be approximately 10(3) times for R6G. The successful observation of resonance Raman peaks demonstrates that graphene can be used as a substrate to suppress FL in resonance Raman spectroscopy (RRS), which has potential applications in low-concentration detection and RRS study of fluorescent molecules.

Few-Layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential

A topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk band gap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that group V-VI materials Bi(2)Se(3), Bi(2)Te(3), and Sb(2)Te(3) are TIs with a single Dirac cone on the surface. These materials have anisotropic, layered structures, in which five atomic layers are covalently bonded to form a quintuple layer, and quintuple layers interact weakly through van der Waals interaction to form the crystal. A few quintuple layers of these materials are predicted to exhibit interesting surface properties. Different from our previous nanoribbon study, here we report the synthesis and characterizations of ultrathin Bi(2)Te(3) and Bi(2)Se(3) nanoplates with thickness down to 3 nm (3 quintuple layers), via catalyst-free vapor-solid (VS) growth mechanism. Optical images reveal thickness-dependent color and contrast for nanoplates grown on oxidized silicon (300 nm SiO(2)/Si). As a new member of TI nanomaterials, ultrathin TI nanoplates have an extremely large surface-to-volume ratio and can be electrically gated more effectively than the bulk form, potentially enhancing surface state effects in transport measurements. Low-temperature transport measurements of a single nanoplate device, with a high-k dielectric top gate, show decrease in carrier concentration by several times and large tuning of chemical potential.

Epitaxial Monolayer MoS2 on Mica with Novel Photoluminescence

Molybdenum disulfide (MoS2) is back in the spotlight because of the indirect-to-direct bandgap tunability and valley related physics emerging in the monolayer regime. However, rigorous control of the monolayer thickness is still a huge challenge for commonly utilized physical exfoliation and chemical synthesis methods. Herein, we have successfully grown predominantly monolayer MoS2 on an inert and nearly lattice-matching mica substrate by using a low-pressure chemical vapor deposition method. The growth is proposed to be mediated by an epitaxial mechanism, and the epitaxial monolayer MoS2 is intrinsically strained on mica due to a small adlayer-substrate lattice mismatch (~2.7%). Photoluminescence (PL) measurements indicate strong single-exciton emission in as-grown MoS2 and room-temperature PL helicity (circular polarization ~0.35) on transferred samples, providing straightforward proof of the high quality of the prepared monolayer crystals. The homogeneously strained high-quality monolayer MoS2 prepared in this study could competitively be exploited for a variety of future applications.

Formation of Bilayer Bernal Graphene: Layer-by-Layer Epitaxy via Chemical Vapor Deposition

We report the epitaxial formation of bilayer Bernal graphene on copper foil via chemical vapor deposition. The self-limit effect of graphene growth on copper is broken through the introduction of a second growth process. The coverage of bilayer regions with Bernal stacking can be as high as 67% before further optimization. Facilitated with the transfer process to silicon/silicon oxide substrates, dual-gated graphene transistors of the as-grown bilayer Bernal graphene were fabricated, showing typical tunable transfer characteristics under varying gate voltages. The high-yield layer-by-layer epitaxy scheme will not only make this material easily accessible but reveal the fundamental mechanism of graphene growth on copper.

Ultrathin two-dimensional atomic crystals as stable interfacial layer for improvement of lithium metal anode.

Stable cycling of lithium metal anode is challenging due to the dendritic lithium formation and high chemical reactivity of lithium with electrolyte and nearly all the materials. Here, we demonstrate a promising novel electrode design by growing two-dimensional (2D) atomic crystal layers including hexagonal boron nitride (h-BN) and graphene directly on Cu metal current collectors. Lithium ions were able to penetrate through the point and line defects of the 2D layers during the electrochemical deposition, leading to sandwiched lithium metal between ultrathin 2D layers and Cu. The 2D layers afford an excellent interfacial protection of Li metal due to their remarkable chemical stability as well as mechanical strength and flexibility, resulting from the strong intralayer bonds and ultrathin thickness. Smooth Li metal deposition without dendritic and mossy Li formation was realized. We showed stable cycling over 50 cycles with Coulombic efficiency ∼97% in organic carbonate electrolyte with current density and areal capacity up to the practical value of 2.0 mA/cm(2)and 5.0 mAh/cm(2), respectively, which is a significant improvement over the unprotected electrodes in the same electrolyte.

The edge- and basal-plane-specific electrochemistry of a single-layer graphene sheet

Graphene has a unique atom-thick two-dimensional structure and excellent properties, making it attractive for a variety of electrochemical applications, including electrosynthesis, electrochemical sensors or electrocatalysis, and energy conversion and storage. However, the electrochemistry of single-layer graphene has not yet been well understood, possibly due to the technical difficulties in handling individual graphene sheet. Here, we report the electrochemical behavior at single-layer graphene-based electrodes, comparing the basal plane of graphene to its edge. The graphene edge showed 4 orders of magnitude higher specific capacitance, much faster electron transfer rate and stronger electrocatalytic activity than those of graphene basal plane. A convergent diffusion effect was observed at the sub-nanometer thick graphene edge-electrode to accelerate the electrochemical reactions. Coupling with the high conductivity of a high-quality graphene basal plane, graphene edge is an ideal electrode for electrocatalysis and for the storage of capacitive charges.