Zhongpei Feng

Tunable critical temperature for superconductivity in FeSe thin films by pulsed laser deposition

Stabilized FeSe thin films in ambient pressure with tunable superconducting critical temperature would be a promising candidate for superconducting electronic devices. By carefully controlling the depositions on twelve kinds of substrates using a pulsed laser deposition technique single crystalline FeSe thin films were fabricated. The high quality of the thin films was confirmed by X-ray diffraction with a full width at half maximum of 0.515° in the rocking curve and clear four-fold symmetry in φ-scan. The films have a maximum Tc ~ 15 K on the CaF2 substrate and were stable in ambient conditions air for more than half a year. Slightly tuning the stoichiometry of the FeSe targets, the superconducting critical temperature becomes adjustable below 15 K with quite narrow transition width less than 2 K. These FeSe thin films deposited on different substrates are optimized respectively. The Tc of these optimized films show a relation with the out-of-plane (c-axis) lattice parameter of the FeSe films.

Superconducting (Li,Fe)OHFeSe Film of High Quality and High Critical Parameters

The superconducting film of (Li1-xFex)OHFeSe is reported for the first time. The thin film exhibits a small in-plane crystal mosaic of 0.22 deg, in terms of the FWHM (full-width-at-half-maximum) of x-ray rocking curve, and an excellent out-of-plane orientation by x-ray phi-scan. Its bulk superconducting transition temperature (Tc) of 42.4 K is characterized by both zero electrical resistance and diamagnetization measurements. The upper critical field (Hc2) is estimated to be 79.5 T and 443 T, respectively, for the magnetic field perpendicular and parallel to the ab plane. Moreover, a large critical current density (Jc) of a value over 0.5 MA/cm2 is achieved at ~20 K. Such a (Li1-xFex)OHFeSe film is therefore not only important to the fundamental research for understanding the high-Tc mechanism, but also promising in the field of high-Tc superconductivity application, especially in high-performance electronic devices and large scientific facilities such as superconducting accelerator.

Doping Mn into (Li

We report the success in introducing Mn into (Li1-xFex)OHFe1-ySe superconducting crystals by applying two different hydrothermal routes, ion exchange (1-Step) and ion release/introduction (2-Step). The micro-region x-ray diffraction and energy dispersive x-ray spectroscopy analyses indicate that the Mn has been doped into the lattice, and its content in the 1-Step fabricated sample is higher than that in the 2-Step one. Magnetic susceptibility and electric transport properties reveal that Mn doping influences little on the superconducting transition, regardless of 1-Step or 2-Step routes. By contrast, the characteristic temperature, T*, where the negative Hall coefficient reaches its minimum, is significantly reduced by Mn doping. This implies that the reduction of the hole carriers contribution is obviously modified, and hence the hole band might have no direct relationship with the superconductivity in (Li1-xFex)OHFe1-ySe superconductors. Our present hydrothermal methods of ion exchange and ion release/introduction provide an efficient way for elements substitution/doping into (Li1-xFex)OHFe1-ySe superconductors, which will promote the in-depth investigations on the role of multiple electron and hole bands and their interplay with the high-temperature superconductivity in the FeSe-based superconductors.

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We report comprehensive angle-resolved photoemission investigations on the electronic structure of single crystal multiple-layer FeSe films grown on CaF2 substrate by pulsed laser deposition (PLD) method. Measurements on FeSe/CaF2 samples with different superconducting transition temperatures of 4 K, 9 K, and 14 K reveal electronic difference in their Fermi surface and band structure. Indication of the nematic phase transition is observed from temperature-dependent measurements of these samples; the nematic transition temperature is 140–160 K, much higher than K for the bulk FeSe. Potassium deposition is applied onto the surface of these samples; the nematic phase is suppressed by potassium deposition which introduces electrons to these FeSe films and causes a pronounced electronic structure change. We compared and discussed the electronic structure and superconductivity of the FeSe/CaF2 films by PLD method with the FeSe/SrTiO3 films by molecular beam epitaxy (MBE) method and bulk FeSe. The PLD-grown multilayer FeSe/CaF2 is more hole-doped than that in MBE-grown multiple-layer FeSe films. Our results on FeSe/CaF2 films by PLD method establish a link between bulk FeSe single crystal and FeSe/SrTiO3 films by MBE method, and provide important information to understand superconductivity in FeSe-related systems.

OHFe

Dongna Yuan,1 Jie Yuan,1 Yulong Huang,1 Shunli Ni,1 Zhongpei Feng,1 Huaxue Zhou,1 Yiyuan Mao,1 Kui Jin,1,2 Guangming Zhang,3 Xiaoli Dong,1,2,* Fang Zhou,1,2,† and Zhongxian Zhao1,2 1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing 100190, China 2University of Chinese Academy of Sciences, Beijing 100049, China 3State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China (Received 2 May 2016; revised manuscript received 1 August 2016; published 18 August 2016)