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Dive into the research topics where Zhou Jingtao is active.

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Featured researches published by Zhou Jingtao.


Chinese Physics Letters | 2015

A 330–500 GHz Zero-Biased Broadband Tripler Based on Terahertz Monolithic Integrated Circuits

Ren Tianhao; Zhang Yong; Yan Bo; Xu Ruimin; Yang Chengyue; Zhou Jingtao; Jin Zhi

A 330–500 GHz zero-biased broadband monolithic integrated tripler is reported. The measured results show that the maximum efficiency and the maximum output power are 2% and 194 μW at 348 GHz. The saturation characteristic test shows that the output 1 dB compression point is about −8.5 dBm at 334 GHz and the maximum efficiency is obtained at the point, which is slightly below the 1 dB compression point. Compared with the conventional hybrid integrated circuit, a major advantage of the monolithic integrated circuit is the significant improvement of reliability and consistency. In this work, a terahertz monolithic frequency multiplier at this band is designed and fabricated.


Journal of Semiconductors | 2013

Planar InP-based Schottky barrier diodes for terahertz applications

Zhou Jingtao; Yang Chengyue; Ge Ji; Jin Zhi

Based on characteristics such as low barrier and high electron mobility of lattice matched In0.53Ga0.47As layer, InP-based Schottky barrier diodes (SBDs) exhibit the superiorities in achieving a lower turn-on voltage and series resistance in comparison with GaAs ones. Planar InP-based SBDs have been developed in this paper. Measurements show that a low forward turn-on voltage of less than 0.2 V and a cutoff frequency of up to 3.4 THz have been achieved. The key factors of the diode such as series resistance and the zero-biased junction capacitance are measured to be 3.32 Ω; and 9.1 fF, respectively. They are highly consistent with the calculated values. The performances of the InP-based SBDs in this work, such as low noise and low loss, are promising for applications in the terahertz mixer, multiplier and detector circuits.


Chinese Physics Letters | 2011

Compact 2×2 Multi-Mode Interference Couplers with Uneven Splitting-Ratios Based on Silicon Nanowires

Zhou Jingtao; Shen Huajun; Yang Chengyue; Liu Huanming; Tang Yidan; Liu Xinyu

Two types of uneven splitting-ratio 2×2 multi-mode interference (MMI) couplers based on silicon nanowires are designed, fabricated and characterized. The splitting ratios are 85:15 and 72:28, respectively. The devices have compact sizes and low excess losses. The footprints of the rectangular MMI region are only about 3μm×18μm and 3μm×14μm, and the minimum excess losses (ELs) are 1.30 dB and 0.82 dB. The measured splitting-ratios are consistent with the designed values. Based on their performance, these 2×2 MMI couplers are suitable candidates for the coupling section of microring resonators where a large resonance bandwidth is required for high speed signal processing. The uneven splitting capability also provides a convenient way to further optimize the Q factor and the bandwidth of the resonator.


Chinese Physics C | 2009

Photon higher-order squeezing effects of the q analogue of a single-mode field interacting with a ?-type three-level atom

Zhang Huihui; Shen Huajun; Zhou Jingtao; Liu Xinyu

The nonlinear theory of interaction between the q analogue of a single-mode field and a Ξ-type three-level atom has been established. And the formal solution of the Schrodinger equation in the representation and its average number are obtained. Then, the photon squeezing effects are studied through numerical calculation. The results show that the q deformation nonlinear action has a lot of influence on the quantum coherence and quantum properties. When q approaches 1, the theory reduces to the common linear theory.


Archive | 2013

Quantitative method for optical analog-to-digital converter based on photonic crystal self-alignment effect

Zhou Jingtao; Liu Xinyu; Shen Huajun; Zhang Huihui; Yang Chengyue; Liu Huanming


Archive | 2012

SiC Schottky diode and manufacturing method thereof

Bai Yun; Shen Huajun; Tang Yidan; Li Bo; Zhou Jingtao; Yang Chengyue; Liu Huanming; Liu Xinyu


Archive | 2012

Method for growing SiO2 passivation layer on SiC material

Li Bo; Shen Huajun; Bai Yun; Tang Yidan; Liu Huanming; Zhou Jingtao; Yang Chengyue


Archive | 2015

Silicon carbide metal-oxide-semiconductor field-effect-transistor (MOSFET) device and fabrication method thereof

Tang Yidan; Shen Huajun; Bai Yun; Zhou Jingtao; Yang Chengyue; Liu Xinyu; Li Chengzhan; Liu Guoyou


Archive | 2014

Multiple quantum well energy band intermixing method used in silicon-based photoelectric heterogeneous medium integration

Liu Xinyu; Zhou Jingtao; Yang Chengyue; Liu Huanming; Liu Honggang; Shen Huajun; Wu Dexin


Archive | 2013

Method for preventing over etching of passivation layers

Li Bo; Shen Huajun; Bai Yun; Tang Yidan; Liu Huanming; Zhou Jingtao; Yang Chengyue; Liu Xinyu

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Yang Chengyue

Chinese Academy of Sciences

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Shen Huajun

Chinese Academy of Sciences

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Liu Huanming

Chinese Academy of Sciences

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Liu Xinyu

Chinese Academy of Sciences

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Tang Yidan

Chinese Academy of Sciences

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Bai Yun

Chinese Academy of Sciences

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Jin Zhi

Chinese Academy of Sciences

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Zhang Huihui

Chinese Academy of Sciences

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Li Chengzhan

Chinese Academy of Sciences

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Ren Tianhao

University of Electronic Science and Technology of China

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