Ziaul Raza Khan

Synthesis of boron nitride nanotubes via chemical vapour deposition: a comprehensive review

Boron nitride nanotubes (BNNTs) have been synthesized by various methods over the last two decades. Among the various growth techniques, chemical vapor deposition (CVD) is one of the best methods for the synthesis of BNNTs in terms of quality and quantity. It offers relatively easy control of different growth parameters such as growth mechanism, experimental set up, precursor variables, catalyst type and temperature, and hence has become very convenient to grow BNNTs with desired size and morphologies leading to various advanced applications. Here, we present a comprehensive review on BNNT growth by CVD techniques ranging from catalytic to plasma assisted CVD. Moreover, the importance of certain variables for an efficient production of BNNTs, and their effects on the size and morphology of the tubes are also discussed elaborately.

Synthesis of Boron Nitride Microtubes and Formation of Boron Nitride Nanosheets

Boron nitride microtubes are synthesized in a dual zone quartz tube furnace at 1200°C with ammonia as a reaction atmosphere. Field emission scanning electron microscopy (FE-SEM) results show a unique cone-like morphology of the tubes with larger internal space and thin walls structure. The diameters of the tubes were found to be in the range of 1 to ∼2 µm with the walls thickness estimated to be from 10 to 100 nm. XPS survey shows N 1 s and B 1 s peaks at 398.7 and 191 eV, respectively, that represent h-BN in the sample. Raman spectroscopy indicates a high-intensity peak at 1372.53 (cm−1) that corresponds to the E2g mode of h-BN. Along with the novel tubular morphology of boron nitride microtubes, the present work also explains a mechanism for the formation of boron nitride nanosheets (from boron nitride microtubes) found in the FE-SEM results of the current sample.

Development and study of the structural and optical properties of hexagonal ZnO nanocrystals

ZnO is a promising member of the semiconducting materials of II-VI group. ZnO nanocrystals have shown potential applications in various novel technologies. In the present investigation of ZnO nanocrystals, a novel chemical route using Zinc acetate as organic precursor is being reported. ZnO nanocrystals were characterized using X-ray diffraction, scanning electron microscopy UV-visible (UV–vis) spectroscopy, and photoluminescence measurements. The X-ray diffraction studies reveal the typical hexagonal structure of ZnO nanocrystals along the preferred orientation of (101) and (100) planes. The optical bandgap of ZnO nanocrystals was found to be 3.50 eV from the absorbance spectrum, which is higher than that of the bulk ZnO material. A blueshift of 21 nm is observed in the excitonic transitions, which clearly indicates the formation of ZnO nanocrystals. Photoluminescence spectroscopy of the ZnO nanocrystals showed a strong emission peak at 365 nm near the band edge along with a weak green-yellow emission peak spanning the range of 450 to 600 nm. The blueshifting was also observed in the photoluminescence spectrum, in accordance with the UV–vis spectroscopy in contrast to the bulk ZnO material.

Growth of Zn1−x Cd x O nanocrystalline thin films by sol-gel method and their characterization for optoelectronic applications

This paper describes the growth of Cd doped ZnO thin films on a glass substrate via sol-gel spin coating technique. The effect of Cd doping on ZnO thin films was investigated using X-ray diffraction (XRD), UV-Vis spectroscopy, photoluminescence spectroscopy, I–V characteristics and field emission scanning electron microscopy (FESEM). X-ray diffraction patterns showed that the films have preferred orientation along (002) plane with hexagonal wurtzite structure. The average crystallite sizes decreased from 24 nm to 9 nm, upon increasing of Cd doping. The films transmittance was found to be very high (92 to 95 %) in the visible region of solar spectrum. The optical band gap of ZnO and Cd doped ZnO thin films was calculated using the transmittance spectra and was found to be in the range of 3.30 to 2.77 eV. On increasing Cd concentration in ZnO binary system, the absorption edge of the films showed the red shifting. Photoluminescence spectra of the films showed the characteristic band edge emission centred over 377 to 448 nm. Electrical characterization revealed that the films had semiconducting and light sensitive behaviour.

Influence of zinc concentration on band gap and sub-band gap absorption on ZnO nanocrystalline thin films sol-gel grown

Abstract ZnO thin films were fabricated on quartz substrates at different zinc acetate molar concentrations using sol-gel spin coating method. The samples were characterized using X-ray diffraction, field emission scanning electron microscope, UV-Vis spectroscopy, FT-IR spectroscopy and photoluminescence spectroscopy. Sub-band gap absorption of ZnO thin films in the forbidden energy region was carried out using highly sensitive photothermal deflection spectroscopy (PDS). The absorption coefficients of ZnO thin films increased in the range of 1.5 eV to 3.0 eV, upon increasing zinc concentration. The optical band gaps were evaluated using Tauc’s plots and found to be in the range of 3.31 eV to 3.18 eV. They showed the red shift in the band edge on increase in zinc concentration. The PL spectra of ZnO thin films revealed the characteristic band edge emission centered at the 396 nm along with green emission centered at the 521 nm.

Boron nitride nanowires synthesis via a simple chemical vapor deposition at 1200 °C

A very simple chemical vapor deposition technique is used to synthesize high quality boron nitride nanowires at 1200 ˚C within a short growth duration of 30 min. FESEM micrograph shows that the as-synthesized boron nitride nanowires have a clear wire like morphology with diameter in the range of ∼20 to 150 nm. HR-TEM confirmed the wire-like structure of boron nitride nanowires, whereas XPS and Raman spectroscopy are used to find out the elemental composition and phase of the synthesized material. The synthesized boron nitride nanowires have potential applications as a sensing element in solid state neutron detector, neutron capture therapy and microelectronic devices with uniform electronic properties.

Sol-Gel Derived Cds Nanocrystalline Thin Films: Optical and Photoconduction Properties

Abstract High-quality CdS nanocrystalline thin films were grown by sol-gel spin coating method at different solution temperatures on glass substrates. As-deposited films exhibited nanocrystalline phase with hexagonal wurtzite structure and showed good adhesion and smooth surface morphology. It was clearly observed that the crystallinity of the thin films improved with the increase in solution temperature. Crystallites sizes of the films also increased and were found to be in the range of 10 mm to 17 nm. The influence of the growth mechanism on the band and sub-band gap absorption of the films was investigated using UV-Vis and photothermal deflection spectroscopy (PDS). The band gap values were calculated in the range of 2.52 eV to 2.75 eV. The band gap decreased up to 9 % with the increase in solution temperature from 45 °C to 75 °C. Absorption coefficients estimated by PDS signal showed the significant absorption in low photon energy region of 1.5 eV to 2.0 eV. The dark and illuminated I-V characteristics revealed that the films were highly photosensitive. The results demonstrated the potential applications of sol-gel grown CdS nanocrystalline thin films as photoconductors and optical switches.