Zongyin Yang

Nanowire Piezo-phototronic Photodetector: Theory and Experimental Design

The piezo-phototronic effect is about the use of the inner crystal piezoelectric potential to tune/control charge carrier generation, separation, transport and/or recombination in optoelectronic devices. In this paper, a theoretical model for describing the characteristics of a metal-nanowire-metal structured piezo-phototronic photodetector is constructed. Numerical simulations fit well to the experimental results of a CdS and ZnO nanowire based visible and UV detector, respectively.

Light-emitting polymer single nanofibers via waveguiding excitation.

We report a general approach to light-emitting polymer nanofibers (PNFs) based on waveguiding excitation. By waveguiding excitation light along the PNFs, we demonstrated that the interaction of light with PNFs is enhanced over 3 orders of magnitude compared with the currently used irradiating excitation. Intriguing advantages such as enhanced excitation efficiency, low excitation power operation down to nW levels, tightly confined excitation with low cross talk, and high photostability of the light-emitting PNFs are obtained. The waveguiding excitation allows incorporation of various fluorescent dyes into PNFs to generate multicolor emitting sources covering the entire visible spectrum. The light-emitting single PNFs via waveguiding excitation may find widespread nanophotonic applications in chemical and biological sensors, multicolor emitting sources, and lasers.

Spatial bandgap engineering along single alloy nanowires.

Bandgap engineering of semiconductor nanowires is important in designing nanoscale multifunctional optoelectronic devices. Here, we report a facile thermal evaporation method, and realize the spatial bandgap engineering in single CdS(1-x)Se(x) alloy nanowires. Along the length of these achieved nanowires, the composition can be continuously tuned from x = 0 (CdS) at one end to x = 1 (CdSe) at the other end, resulting in the corresponding bandgap (light emission wavelength) being modulated gradually from 2.44 eV (507 nm, green light) to 1.74 eV (710 nm, red light). In spite of the existing composition (crystal lattice) transition along the length, these multicolor nanowires still possess high-quality crystallization. These bandgap engineered nanowires will have promising applications in such as multicolor display and lighting, high-efficiency solar cells, ultrabroadly spectral detectors, and biotechnology.

On-Nanowire Spatial Band Gap Design for White Light Emission

We demonstrated a substrate-moving vapor-liquid-solid (VLS) route for growing composition gradient ZnCdSSe alloy nanowires. Relying on temperature-selected composition deposition along their lengths, single tricolor ZnCdSSe alloy nanowires with engineerable band gap covering the entire visible range were obtained. The photometric property of these tricolor nanowires, which was determined by blue-, green-, and red-color emission intensities, can be in turn controlled by their corresponding emission lengths. More particularly, under carefully selected growth conditions, on-nanowire white light emission has been achieved. Band-gap-engineered semiconductor alloy nanowires demonstrated here may find applications in broad band light absorption and emission devices.

Bandgap‐Graded CdSxSe1–x Nanowires for High‐Performance Field‐Effect Transistors and Solar Cells

CdSxSe1–x nanowires with a graded bandgap along the length direction were utilized for field-effect transistors and Schottky junction solar cells. This novel type of nanowires suggests promising electronic and optoelectronic applications in the future.

Wavelength-Converted/Selective Waveguiding Based on Composition-Graded Semiconductor Nanowires

Compact wavelength-sensitive optical components are desirable for optical information processing and communication in photonic integrated system. In this work, optical waveguiding along single composition-graded CdS(x)Se(1-x) nanowires were systematically investigated. Under a focused laser excitation, the excited light can be guided passively along the bandgap-increased direction of the nanowire, keeping the photonic energy of the guided light almost unchanged during the whole propagation. In comparison, the excited light is guided actively through incessantly repeated band-to-band reabsorption and re-emitting processes along the bandgap-decreased direction, resulting in a gradual wavelength conversion during propagation. On the basis of this wavelength-converted waveguiding, a concept of nanoscale wavelength splitter is demonstrated by assembling a graded nanowire with several composition-uniform nanowires into branched nanowire structure. Our study indicates that composition-graded semiconductor nanowires would open new exciting opportunities in developing new wavelength-sensitive optical components for integrated nanophotonic devices.

Asymmetric light propagation in composition-graded semiconductor nanowires

Asymmetric light propagation is crucial to the development of optical-based functional components in nanophotonics. Diverse configurations and structures have been proposed to allow asymmetrical propagation of photonic signal, but on-chip integration is difficult to achieve due to their complex structure and/or relatively large footprint. Here we report the first design and realization of asymmetric light propagation in single semiconductor nanowires with a composition gradient along the length. We show the asymmetric nanowire waveguides can be synthesized using a simple thermal evaporation and vapor transport approach without involving complicated and costly fabrication processes. Our studies demonstrate the asymmetric nanowire waveguides offer some significant advantages over previous designs, including ultra-low operation power, tunable working wavelength and nanoscale footprint, making them attractive building blocks for integrated photonic circuits.

Self‐Powered Ultrasensitive Nanowire Photodetector Driven by a Hybridized Microbial Fuel Cell

An integrated system consisting of a carbon fiber-ZnO hybrid nanowire (NW) multicolor photodetector is driven by a microbial fuel cell (see picture; PMMA = poly(methyl methacrylate), E = electrode). The self-powered photodetector can detect at light levels of as little as nW cm(-2) intensity with a responsivity of more than 300 A W(-1).

Black phosphorus ink formulation for inkjet printing of optoelectronics and photonics.

Black phosphorus is a two-dimensional material of great interest, in part because of its high carrier mobility and thickness dependent direct bandgap. However, its instability under ambient conditions limits material deposition options for device fabrication. Here we show a black phosphorus ink that can be reliably inkjet printed, enabling scalable development of optoelectronic and photonic devices. Our binder-free ink suppresses coffee ring formation through induced recirculating Marangoni flow, and supports excellent consistency (< 2% variation) and spatial uniformity (< 3.4% variation), without substrate pre-treatment. Due to rapid ink drying (< 10 s at < 60 °C), printing causes minimal oxidation. Following encapsulation, the printed black phosphorus is stable against long-term (> 30 days) oxidation. We demonstrate printed black phosphorus as a passive switch for ultrafast lasers, stable against intense irradiation, and as a visible to near-infrared photodetector with high responsivities. Our work highlights the promise of this material as a functional ink platform for printed devices.Atomically thin black phosphorus shows promise for optoelectronics and photonics, yet its instability under environmental conditions and the lack of well-established large-area synthesis protocols hinder its applications. Here, the authors demonstrate a stable black phosphorus ink suitable for printed ultrafast lasers and photodetectors.

Broadly Defining Lasing Wavelengths in Single Bandgap-Graded Semiconductor Nanowires

Designing lasing wavelengths and modes is essential to the practical applications of nanowire (NW) lasers. Here, according to the localized photoluminescence spectra, we first demonstrate the ability to define lasing wavelengths over a wide range (up to 119 nm) based on an individual bandgap-graded CdSSe NW by forward cutting the NW from CdSe to CdS end. Furthermore, free spectral range (FSR) and modes of the obtained lasers could be controlled by backward cutting the NW from CdS to CdSe end step-by-step. Interestingly, single-mode NW laser with predefined lasing wavelength is realized in short NWs because of the strong mode competition and increase in FSR. Finally, the gain properties of the bandgap-graded NWs are investigated. The combination of wavelength and mode selectivity in NW lasers may provide a new platform for the next generation of integrated optoelectronic devices.