Anlian Pan

Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions

Two-dimensional layered semiconductors such as MoS₂ and WSe₂ have attracted considerable interest in recent times. Exploring the full potential of these layered materials requires precise spatial modulation of their chemical composition and electronic properties to create well-defined heterostructures. Here, we report the growth of compositionally modulated MoS₂-MoSe₂ and WS₂-WSe₂ lateral heterostructures by in situ modulation of the vapour-phase reactants during growth of these two-dimensional crystals. Raman and photoluminescence mapping studies demonstrate that the resulting heterostructure nanosheets exhibit clear structural and optical modulation. Transmission electron microscopy and elemental mapping studies reveal a single crystalline structure with opposite modulation of sulphur and selenium distributions across the heterostructure interface. Electrical transport studies demonstrate that the WSe₂-WS₂ heterojunctions form lateral p-n diodes and photodiodes, and can be used to create complementary inverters with high voltage gain. Our study is an important advance in the development of layered semiconductor heterostructures, an essential step towards achieving functional electronics and optoelectronics.

Growth of Alloy MoS2xSe2(1–x) Nanosheets with Fully Tunable Chemical Compositions and Optical Properties

Band gap engineering of atomically thin two-dimensional layered materials is critical for their applications in nanoelectronics, optoelectronics, and photonics. Here we report, for the first time, a simple one-step chemical vapor deposition approach for the simultaneous growth of alloy MoS2xSe2(1-x) triangular nanosheets with complete composition tunability. Both the Raman and the photoluminescence studies show tunable optical properties consistent with composition of the alloy nanosheets. Importantly, all samples show a single bandedge emission peak, with the spectral peak position shifting from 668 nm (for pure MoS2) to 795 nm (for pure MoSe2), indicating the high quality for these complete composition alloy nanosheets. These band gap engineered 2D structures could open up an exciting opportunity for probing their fundamental physical properties in 2D and may find diverse applications in functional electronic/optoelectronic devices.

Continuous Alloy-Composition Spatial Grading and Superbroad Wavelength-Tunable Nanowire Lasers on a Single Chip

By controlling local substrate temperature in a chemical vapor deposition system, we have successfully achieved spatial composition grading covering the complete composition range of ternary alloy CdSSe nanowires on a single substrate of 1.2 cm in length. Spatial photoluminescence scan along the substrate length shows peak wavelength changes continuously from approximately 500 to approximately 700 nm. Furthermore, we show that under strong optical pumping, every spot along the substrate length displays lasing behavior. Thus our nanowire chip provides a spatially continuously tunable laser with a superbroad wavelength tuning range, unmatched by any other available semiconductor-based technology.

Novel Ag3PO4/CeO2 composite with high efficiency and stability for photocatalytic applications

A novel Ag3PO4/CeO2 composite was fabricated by in situ wrapping CeO2 nanoparticles with Ag3PO4 through a facile precipitation method. The photocatalytic properties of Ag3PO4/CeO2 were evaluated by the photocatalytic degradation of MB and phenol under visible light and UV light irradiation. The photocatalytic activity of the composite is much higher than that of pure Ag3PO4 or CeO2. The rate constant of MB degradation over Ag3PO4/CeO2 is more than 2 times and 20 times than those of pure Ag3PO4 and CeO2 under visible light irradiation, respectively. The Ag3PO4/CeO2 composite photocatalyst also shows higher photocatalytic activity for the colorless phenol degradation compared to pure Ag3PO4. Moreover, the Ag3PO4/CeO2 sample has almost no loss of photocatalytic activity after five recycles under the irradiation of visible light and UV light, indicating that the composite has good photocatalytic stability. The excellent photocatalytic activity of the Ag3PO4/CeO2 composite is closely related to the fast transfer and efficient separation of electron–hole pairs at the interfaces of the two semiconductors derived from the matching band positions between CeO2 and Ag3PO4. This newly constructed Ag3PO4/CeO2 composite, with promising and fascinating visible light-driven photocatalytic activity as well as good stability, could find potential applications in environmental purification and solar energy conversion.

Surface Plasmon‐Enhanced Photodetection in Few Layer MoS2 Phototransistors with Au Nanostructure Arrays

2D Molybdenum disulfide (MoS2 ) is a promising candidate material for high-speed and flexible optoelectronic devices, but only with low photoresponsivity. Here, a large enhancement of photocurrent response is obtained by coupling few-layer MoS2 with Au plasmonic nanostructure arrays. Au nanoparticles or nanoplates placed onto few-layer MoS2 surface can enhance the local optical field in the MoS2 layer, due to the localized surface plasmon (LSP) resonance. After depositing 4 nm thick Au nanoparticles sparsely onto few-layer MoS2 phototransistors, a doubled increase in the photocurrent response is observed. The photocurrent of few-layer MoS2 phototransistors exhibits a threefold enhancement with periodic Au nanoarrays. The simulated optical field distribution confirms that light can be trapped and enhanced near the Au nanoplates. These findings offer an avenue for practical applications of high performance MoS2 -based optoelectronic devices or systems in the future.

Strong photoluminescence of nanostructured crystalline tungsten oxide thin films

Strong photoluminescence (PL) is observed in nanostructured crystalline tungsten oxide thin films that are prepared by thermal evaporation. Two kinds of films are investigated—one made of nanoparticles and another of nanowires. At room temperature, strong PL emissions at ultraviolet-visible and blue regions are found in both of the films. Compared with the complete absence of emission of bulk phase tungsten oxide powder under the same excitation conditions, our results clearly demonstrate the quantum-confinement-effect-induced photoluminescence in nanostructured tungsten oxides.Strong photoluminescence (PL) is observed in nanostructured crystalline tungsten oxide thin films that are prepared by thermal evaporation. Two kinds of films are investigated—one made of nanoparticles and another of nanowires. At room temperature, strong PL emissions at ultraviolet-visible and blue regions are found in both of the films. Compared with the complete absence of emission of bulk phase tungsten oxide powder under the same excitation conditions, our results clearly demonstrate the quantum-confinement-effect-induced photoluminescence in nanostructured tungsten oxides.

Spatial composition grading of quaternary ZnCdSSe alloy nanowires with tunable light emission between 350 and 710 nm on a single substrate

We demonstrated a general methodology of growing spatially composition-controlled alloys by combining spatial source reagent gradient with a temperature gradient. Using this dual gradient method, we achieved for the first time a continuous spatial composition grading of single-crystal quaternary Zn(x)Cd(1-x)S(y)Se(1-y) alloy nanowires over the complete band gap range along the length of a substrate. The band gap grading spans between 3.55 eV (ZnS) and 1.75 eV (CdSe) on a single substrate, with the corresponding light emission over the entire visible spectrum. We also showed that the dual gradient method can be extended to achieve alloy composition control in two spatial dimensions. The unique material platform achieved will open a wide range of applications from color engineered display and lighting, full spectrum solar cells, multispectral detectors, or spectrometer on-a-chip to superbroadly tunable nanolasers. The growth methodology can be extended more generally to other alloy systems.

Composition and Bandgap‐Graded Semiconductor Alloy Nanowires

Semiconductor alloy nanowires with spatially graded compositions (and bandgaps) provide a new material platform for many new multifunctional optoelectronic devices, such as broadly tunable lasers, multispectral photodetectors, broad-band light emitting diodes (LEDs) and high-efficiency solar cells. In this review, we will summarize the recent progress on composition graded semiconductor alloy nanowires with bandgaps graded in a wide range. Depending on different growth methods and material systems, two typical nanowire composition grading approaches will be presented in detail, including composition graded alloy nanowires along a single substrate and those along single nanowires. Furthermore, selected examples of applications of these composition graded semiconductor nanowires will be presented and discussed, including tunable nanolasers, multi-terminal on-nanowire photodetectors, full-spectrum solar cells, and white-light LEDs. Finally, we will make some concluding remarks with future perspectives including opportunities and challenges in this research area.

Lateral Growth of Composition Graded Atomic Layer MoS2(1–x)Se2x Nanosheets

Band gap engineering of transition-metal dichalcogenides is an important task for their applications in photonics, optoelectronics, and nanoelectronics. We report for the first time the continuous lateral growth of composition graded bilayer MoS(2(1-x))Se(2x) alloys along single triangular nanosheets by an improved chemical vapor deposition approach. From the center to the edge of the nanosheet, the composition can be gradually tuned from x = 0 (pure MoS2) to x = 0.68, leading to the corresponding bandgap being continuously modulated from 1.82 eV (680 nm) to 1.64 eV (755 nm). Local photoluminescence scanning from the center to the edge gives single band edge emission peaks, indicating high crystalline quality for the achieved alloy nanosheets, which was further demonstrated by the microstructure characterizations. These novel 2D structures offer an interesting system for probing the physical properties of layered materials and exploring new applications in functional nanoelectronic and optoelectronic devices.

Spatial bandgap engineering along single alloy nanowires.

Bandgap engineering of semiconductor nanowires is important in designing nanoscale multifunctional optoelectronic devices. Here, we report a facile thermal evaporation method, and realize the spatial bandgap engineering in single CdS(1-x)Se(x) alloy nanowires. Along the length of these achieved nanowires, the composition can be continuously tuned from x = 0 (CdS) at one end to x = 1 (CdSe) at the other end, resulting in the corresponding bandgap (light emission wavelength) being modulated gradually from 2.44 eV (507 nm, green light) to 1.74 eV (710 nm, red light). In spite of the existing composition (crystal lattice) transition along the length, these multicolor nanowires still possess high-quality crystallization. These bandgap engineered nanowires will have promising applications in such as multicolor display and lighting, high-efficiency solar cells, ultrabroadly spectral detectors, and biotechnology.