Condensed Matter

We investigate the optical activity of tilted nodal loop semimetals. We calculate the full conductivity matrix for a band structure containing a nodal loop with possible tilt in the x?�y plane, which allows us to study the Kerr rotation and ellipticity both for a thin film and a bulk material. We find signatures in the Kerr signal that give direct information about the tilt velocity and direction, the radius of the nodal loop and the internal chemical potential of the system. These findings should serve as guide to understanding optical measurements of nodal loop semimetals and as an additional tool to characterize them.

In this work we discuss extensions of the pioneering analysis by Dzyaloshinskii and Larkin of correlation functions for one-dimensional Fermi systems, focusing on the effects of quasiparticle relaxation enabled by a nonlinear dispersion. Throughout the work we employ both, the weakly interacting Fermi gas picture and nonlinear Luttinger liquid theory to describe attenuation of excitations and explore the fermion-boson duality between both approaches. Special attention is devoted to the role of spin-exchange processes, effects of interaction screening, and integrability. Thermalization rates for electron- and hole-like quasiparticles, as well as the decay rate of collective plasmon excitations and the momentum space mobility of spin excitations are calculated for various temperature regimes. The phenomenon of spin-charge drag is considered and the corresponding momentum transfer rate is determined. We further discuss how momentum relaxation due to several competing mechanisms, viz. triple electron collisions, electron-phonon scattering, and long-range inhomogeneities affect transport properties, and highlight energy transfer facilitated by plasmons from the perspective of the inhomogeneous Luttinger liquid model. Finally, we derive the full matrix of thermoelectric coefficients at the quantum critical point of the first conductance plateau transition, and address magnetoconductance in ballistic semiconductor nanowires with strong Rashba spin-orbit coupling.

When a single-layer graphene sheet is contacted with metallic electrodes, tunnel barriers are formed as a result of the doping of graphene by the metal in the contact region. If the Fermi energy level is modulated by a gate voltage, the phenomenon of Klein tunneling results in specific features in the conductance and noise. Here we obtain analytically exact solutions for the transmission and reflection probability amplitudes using a trapezoidal potential barrier, allowing us to calculate the differential conductance and the Fano factor for a graphene sheet in the ballistic regime. We put in evidence an unexpected global symmetry - the transmission probability is the same for energies symmetric with respect to half of the barrier height. We outline a proposal for the experimental verification of these ideas using realistic sample parameters.

We propose a nanoscale device consisting of a double quantum dot with strong intra- and inter- dot Coulomb repulsions. In this design, the current can only flow through the lower dot, but is triggered by the gate-controlled occupancy of the upper dot. At low temperatures, our calculations predict the double dot to pass through a narrow Kondo regime, resulting in highly sensitive switching characteristics between three well-defined states : insulating, normal conduction and resonant conduction.

We derive the energy levels of a circular Quantum Dot (QD) under a transverse magnetic field, incorporating the Ben-Daniel Duke boundary condition (BDD). The parameters in our model are the confinement barrier height, the size of the QD, the magnetic field strength, and a mass ratio highlighting the effect of using BDD. Charge densities, transition energies, and the dependence of energies on magnetic field has been calculated to show the strong influence of BDD. We find that our numerical calculations agree well with experimental results on the GaAs-InGaAs Quantum Dot and can be used further. We also provide an insightful analytical approximation to our numerical results, which converges well for larger values of size and confinement.

In this study, we observe that the conductance of a quantum point contact on a GaAs/AlGaAs double quantum well depends significantly on the magnetic field perpendicular to the two-dimensional electron gas. In the presence of the magnetic field, the subband edge splitting due to the Zeeman energy reaches 0.09 meV at 0.16 T, thereby suggesting an enhanced g-factor. The estimated g-factor enhancement is 17.5 times that of the bare value. It is considered that a low electron density and high mobility makes it possible to reach a strong many-body interaction regime in which this type of strong enhancement in g-factor can be observed.

Recent exploration of the commensurate structure in the turbostratic double layer graphene shows that the large angle twisting can be treated by the decrease of the effective velocity within the energy spectra of the single layer graphene. Within our work, we use this result as a starting point, aiming towards understanding the physics of by a large angle twisted double layer graphene (i.e. Moire) quantum dot systems. We show that within this simple approach using the language of the first quantization, yet another so far unrealized (not up to our knowledge), illustrative property of the commutation relation appears in the graphene physics. Intriguingly, large twisting angles show to be a suitable tunning knob of the position symmetry in the graphene systems. Complete overview of the large angle twisting on the considered dot systems is provided.

We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates. At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order 2e2/h. We investigate these ZBPs for large ranges of gate voltages in different devices. We discuss possible interpretations in terms of disorder-induced subgap states, Andreev bound states and Majorana zero modes.

Laser cooling of matter through anti-Stokes photoluminescence, where the emitted frequency of light exceeds that of the impinging laser by virtue of absorption of thermal vibrational energy, has been successfully realized in condensed media, and in particular with rare earth doped systems achieving sub-100K solid state optical refrigeration. Studies suggest that laser cooling in semiconductors has the potential of achieving temperatures down to ~10K and that its direct integration can usher unique high-performance nanostructured semiconductor devices. While laser cooling of nanostructured II-VI semiconductors has been reported recently, laser cooling of indirect bandgap semiconductors such as group IV silicon and germanium remains a major challenge. Here we report on the anomalous observation of dominant anti-Stokes photoluminescence in germanium nanocrystals. We attribute this result to the confluence of ultra-high purity nanocrystal germanium, generation of high density of electron-hole plasma, the inherent degeneracy of longitudinal and transverse optical phonons in non-polar indirect bandgap semiconductors, and commensurate spatial confinement effects. At high laser intensities, laser cooling with lattice temperature as low as ~50K is inferred.

In 2D materials, the quantum confinement and van der Waals-type interlayer interactions largely govern the fundamental electronic and optical properties, and the dielectric screening plays a dominant role in the excitonic properties. This suggests strongly layer-dependent properties, and a central topic is to characterize and control the interlayer interactions in 2D materials and heterostructures. Black phosphorus is an emerging 2D semiconductor with unusually strong interlayer interactions and widely tunable direct bandgaps from the monolayer to the bulk, offering us an ideal platform to probe the layer-dependent properties and the crossover from 2D to 3D (i.e., the scaling effects). In this review, we present a comprehensive and thorough summary of the fundamental physical properties of black phosphorus, with a special focus on the layer-dependence characters, including the electronic band structures, optical absorption and photoluminescence, and excitonic properties, as well as the band structure engineering by means of electrical gating, strain, and electrochemical intercalation. Finally, we give an outlook for the future research.