Condensed Matter

As an application in circuit quantum electrodynamics (cQED) coupled systems, superconducting resonators play an important role in high-sensitivity measurements in a superconductingsemiconductor hybrid architecture. Taking advantage of a high-impedance NbTiN resonator, we perform excited-state spectroscopy on a GaAs double quantum dot (DQD) by applying voltage pulses to one gate electrode. The pulse train modulates the DQD energy detuning and gives rise to charge state transitions at zero detuning. Benefiting from the outstanding sensitivity of the resonator, we distinguish different spin-state transitions in the energy spectrum according to the Pauli exclusion principle. Furthermore, we experimentally study how the interdot tunneling rate modifies the resonator response. The experimental results are consistent with the simulated spectra based on our model.

A key challenge in scaling quantum computers is the calibration and control of multiple qubits. In solid-state quantum dots, the gate voltages required to stabilize quantized charges are unique for each individual qubit, resulting in a high-dimensional control parameter space that must be tuned automatically. Machine learning techniques are capable of processing high-dimensional data - provided that an appropriate training set is available - and have been successfully used for autotuning in the past. In this paper, we develop extremely small feed-forward neural networks that can be used to detect charge-state transitions in quantum dot stability diagrams. We demonstrate that these neural networks can be trained on synthetic data produced by computer simulations, and robustly transferred to the task of tuning an experimental device into a desired charge state. The neural networks required for this task are sufficiently small as to enable an implementation in existing memristor crossbar arrays in the near future. This opens up the possibility of miniaturizing powerful control elements on low-power hardware, a significant step towards on-chip autotuning in future quantum dot computers.

The topology of electronic states in band insulators with mirror symmetry can be classified in two different ways. One is in terms of the mirror Chern number, an integer that counts the number of protected Dirac cones in the Brillouin zone of high-symmetry surfaces. The other is via a Z 2 index that distinguishes between systems that have a nonzero quantized orbital magnetoelectric coupling ("axion-odd"), and those that do not ("axion-even"); this classification can also be induced by other symmetries in the magnetic point group, including time reversal and inversion. A systematic characterization of the axion Z 2 topology has previously been obtained by representing the valence states in terms of hybrid Wannier functions localized along one chosen crystallographic direction, and inspecting the associated Wannier band structure. Here we focus on mirror symmetry, and extend that characterization to the mirror Chern number. We choose the direction orthogonal to the mirror plane as the Wannierization direction, and show that the mirror Chern number can be determined from the winding numbers of the touching points between Wannier bands on mirror-invariant planes, and from the Chern numbers of flat bands pinned to those planes. In this representation, the relation between the mirror Chern number and the axion Z 2 index is readily established. The formalism is illustrated by means of ab initio calculations for SnTe in the monolayer and bulk forms, complemented by tight-binding calculations for a toy model.

In disordered two dimensional Chern insulators, a single bulk extended mode is predicted to exist per band, up to a critical disorder strength; all the other bulk modes are localized. This behavior contrasts strongly with topologically trivial two-dimensional phases, whose modes all become localized in the presence of disorder. Using a tight-binding model of a realistic photonic Chern insulator, we show that delocalized bulk eigenstates can be observed in an experimentally realistic setting. This requires the selective use of resonator losses to suppress topological edge states, and acquiring sufficiently large ensemble sizes using variable resonator detunings.

We present a systematic numerical modeling investigation of magnetization dynamics and thermal magnetic moment fluctuations of single magnetic domain nanoparticles in a configuration applicable to enhancing inductive magnetic resonance detection signal to noise ratio (SNR). Previous proposals for oriented anisotropic single magnetic domain nanoparticle amplification of magnetic flux in MRI coil focused only on the coil pick-up voltage signal enhancement. Here we extend the analysis to the numerical evaluation of the SNR by modeling the inherent thermal magnetic noise introduced into the detection coil by the insertion of such anisotropic nanoparticle-filled coil core. We utilize the Landau-Lifshitz-Gilbert equation under the Stoner-Wohlfarth single magnetic domain (macrospin) assumption to simulate the magnetization dynamics in such nanoparticles due to AC drive field as well as thermal noise. These simulations are used to evaluate the nanoparticle configurations and shape effects on enhancing SNR. Finally, we explore the effect of narrow band filtering of the broadband magnetic moment thermal fluctuation noise on the SNR. Our results provide the impetus for relatively simple modifications to existing MRI systems for achieving enhanced detection SNR in scanners with modest polarizing magnetic fields.

The modified rigorous coupled-wave analysis technique is developed to describe the optical characteristics of the plasmonic structures with the grating-gated delta-thin conductive channel in the far- and near-field zones of electromagnetic waves. The technique was applied for analysis of the resonant properties of AlGaN/GaN heterostructures combined with deeply-subwavelength metallic grating which facilitates the excitation of the two-dimensional plasmons in the THz frequency range. The convergence of the calculations at the frequencies near the plasmon resonances is discussed. The impact of the grating's parameters, including filling factor and thickness of the grating, on resonant absorption of the structure was investigated in details. The spatial distributions of electromagnetic field in a near-field zone were used for the evaluation of total absorption of the plasmonic structures separating contributions of the grating-gated two-dimensional electron gas and the grating coupler.

We analyze the modulation characteristics of the uncooled terahertz (THz) and infrared (IR) detectors using the variation of the density and effective temperature of the two-dimensional electron-hole plasma in uniform graphene layers (GLs) and perforated graphene layers (PGLs) due to the absorption of THz and IR radiation. The performance of the photodetectors (both the GL-photoresistor and the PGL-based barrier photodiodes) are compared. Their characteristics are also compared with the GL reverse-biased photodiodes. The obtained results allow to evaluate the ultimate modulation frequencies of these photodetectors and can be used for their optimization.

Moiré superlattices (MSL) formed in angle-aligned bilayers of van der Waals materials have become a promising platform to realize novel two-dimensional electronic states. Angle-aligned trilayer structures can form two sets of MSLs which could potentially interfere with each other. In this work, we directly image the moiré patterns in both monolayer graphene aligned on hBN and twisted bilayer graphene aligned on hBN, using combined scanning microwave impedance microscopy and conductive atomic force microscopy. Correlation of the two techniques reveals the contrast mechanism for the achieved ultrahigh spatial resolution (<2 nm). We observe two sets of MSLs with different periodicities in the trilayer stack. The smaller MSL breaks the 6-fold rotational symmetry and exhibits abrupt discontinuities at the boundaries of the larger MSL. Using a rigid atomic-stacking model, we demonstrate that the hBN layer considerably modifies the MSL of twisted bilayer graphene. We further analyze its effect on the reciprocal space spectrum of the dual-moiré system.

Transition metal dichalcogenide heterobilayers offer attractive opportunities to realize lattices of interacting bosons with several degrees of freedom. Such heterobilayers can feature moiré patterns that modulate their electronic band structure, leading to spatial confinement of single interlayer excitons (IXs) that act as quantum emitters with C 3 symmetry. However, the narrow emission linewidths of the quantum emitters contrast with a broad ensemble IX emission observed in nominally identical heterobilayers, opening a debate regarding the origin of IX emission. Here we report the continuous evolution from a few trapped IXs to an ensemble of IXs with both triplet and singlet spin configurations in a gate-tunable 2H -MoSe 2 /WSe 2 heterobilayer. We observe signatures of dipolar interactions in the IX ensemble regime which, when combined with magneto-optical spectroscopy, reveal that the narrow quantum-dot-like and broad ensemble emission originate from IXs trapped in moiré potentials with the same atomic registry. Finally, electron doping leads to the formation of three different species of localised negative trions with contrasting spin-valley configurations, among which we observe both intervalley and intravalley IX trions with spin-triplet optical transitions. Our results identify the origin of IX emission in MoSe 2 /WSe 2 heterobilayers and highlight the important role of exciton-exciton interactions and Fermi-level control in these highly tunable quantum materials.

The detection of terahertz (THz) radiation promises intriguing applications in biology, telecommunication, and astronomy but remains a challenging task so far. For example, semiconductor infrared detectors (e.g., HgCdTe) utilize photo-excited electrons across the bandgap and hardly reach the far-infrared terahertz regime because they are vulnerable to thermally excited carriers. In this work, we propose the THz sensing by the bulk photovoltaic effect (BPVE) in the twisted bilayer graphene (TBG). The BPVE converts light into a coherent DC at zero bias or an open-circuit voltage. As a quantum response from the wave function's geometry (different from the p - n junction), BPVE is more robust against temperature excitation and disorders. We predict that the TBG (bandgap of several meV) exhibits a sizeable BPVE response in a range of 0.2 -- 1 THz. Beyond the ordinary shift current scenario, BPVE in TBG comes from a momentum-space shift of flat bands. Our work provides a pathway to design twisted photonics for resonant terahertz detection.