Condensed Matter

Scanning diamond magnetometers based on the optically detected magnetic resonance of the nitrogen-vacancy centre offer very high sensitivity and non-invasive imaging capabilities when the stray fields emanating from ultrathin magnetic materials are sufficiently low (< 10 mT). Beyond this low-field regime, the optical signal quenches and a quantitative measurement is challenging. While the field-dependent NV photoluminescence can still provide qualitative information on magnetic morphology, this operation regime remains unexplored particularly for surface magnetisation larger than ??3 mA. Here, we introduce a multi-angle reconstruction technique (MARe) that captures the full nanoscale domain morphology in all magnetic-field regimes leading to NV photoluminescence quench. To demonstrate this, we use [Ir/Co/Pt] 14 multilayer films with surface magnetisation an order of magnitude larger than previous reports. Our approach brings non-invasive nanoscale magnetic field imaging capability to the study of a wider pool of magnetic materials and phenomena.

The multifractal superconducting state originates from the interplay of Anderson localization and interaction effects. In this article we overview the recent theory of the superconductivity enhancement by multifractality and extend it to describe the spectral properties of superconductors on the scales of the order of the superconducting gap. Specifically, using the approach based on renormalization group within the nonlinear sigma model, we develop the theory of a multifractal superconducting state in thin films. We derive a modified Usadel equation that incorporates the interplay of disorder and interactions at energy scales larger than the spectral gap and study the effect of such an interplay on the low-energy physics. We determine the spectral gap at zero temperature which occurs to be proportional to the multifracally enhanced superconducting transition temperature. The modified Usadel equation results in the disorder-averaged density of states that, near the spectral gap, resembles the one obtained in the model of a spatially random superconducting order parameter. We reveal strong mesoscopic fluctuations of the local density of states in the superconducting state. Such strong mesoscopic fluctuations imply that the interval of energies in which the superconducting gap establishes is parametrically large in systems with multifractally-enhanced superconductivity.

We propose the model of layered materials, in which each layer is described by the conventional Haldane model, while the inter - layer hopping parameter corresponds to the ABC stacking. We calculate the topological invariant N 3 for the resulting model, which is responsible for the conductivity of intrinsic quantum Hall effect. It has been shown that in a certain range of the values of interlayer hopping parameter, the value of N 3 is equal to the number of layers multiplied by the topological invariant of each layer. At the same time this value may be calculated using the low energy effective theory.

The double quantum well systems consisting of two HgTe layers separated by a tunnel-transparent barrier are expected to manifest a variety of phase states including two-dimensional gapless semimetal and two-dimensional topological insulator. The presence of several subbands in such systems leads to a rich filling factor diagram in the quantum Hall regime. We have performed magnetotransport measurements of the HgTe-based double quantum wells in both gapless and gapped state and observed numerous crossings between the Landau levels belonging to different subbands. We analyze the Landau level crossing patterns and compare them to the results of theoretical calculations.

Large area van der Waals (vdW) thin films are assembled materials consisting of a network of randomly stacked nanosheets. The multi-scale structure and the two-dimensional nature of the building block mean that interfaces naturally play a crucial role in the charge transport of such thin films. While single or few stacked nanosheets (i.e. vdW heterostructures) have been the subject of intensive works, little is known about how charges travel through multilayered, more disordered networks. Here we report a comprehensive study of a prototypical system given by networks of randomly stacked reduced graphene oxide 2D nanosheets, whose chemical and geometrical properties can be controlled independently, permitting to explore percolated networks ranging from a single nanosheet to some billions with room temperature resistivity spanning from 10-5 to 10-1 ohm m. We systematically observe a clear transition between two different regimes at a critical temperature T*: Efros-Shklovskii variable range hopping (ESVRH) below T* and power law (PL) behavior above. Firstly, we demonstrate that the two regimes are strongly correlated with each other, both depending on the charge localization length xi, calculated by ES-VRH model, which corresponds to the characteristic size of overlapping sp2 domains belonging to different nanosheets. Thus, we propose a microscopic model describing the charge transport as a geometrical phase transition, given by the metal-insulator transition associated with the percolation of quasi-1D nanofillers with length xi, showing that the charge transport behavior of the networks is valid for all geometries and defects of the nanosheets, ultimately suggesting a generalized description on vdW and disordered thin films.

The optical Stark effect is a tell-tale signature of coherent light-matter interaction in excitonic systems, wherein an irradiating light beam tunes exciton transition frequencies. Here we show that, when excitons are placed in a nanophotonic cavity, the excitonic Stark effect can become highly nonlinear, exhibiting multi-valued and hysteretic Stark shifts that depend on the history of the irradiating light. This multistable Stark effect (MSE) arises from feedback between the cavity mode occupation and excitonic population, mediated by the Stark-induced mutual tuning of the cavity and excitonic resonances. Strikingly, the MSE manifests even for very dilute exciton concentrations and can yield discontinuous Stark shift jumps of order meV. We expect that the MSE can be realized in readily available transition metal dichalcogenide excitonic systems placed in planar photonic cavities, at modest pump intensities. This phenomenon can provide new means to engineer coupled states of light and matter that can persist even in the single exciton limit.

By studying the time-dependent axial and radial growth of InSb nanowires, we map the conditions for the synthesis of single-crystalline InSb nanocrosses by molecular beam epitaxy. Low-temperature electrical measurements of InSb nanocross devices with local gate control on individual terminals exhibit quantized conductance and are used to probe the spatial distribution of the conducting channels. Tuning to a situation where the nanocross junction is connected by few-channel quantum point contacts in the connecting nanowire terminals, we show that transport through the junction is ballistic except close to pinch-off. Combined with a new concept for shadow-epitaxy of patterned superconductors on nanocrosses, the structures reported here show promise for the realization of non-trivial topological states in multi-terminal Josephson Junctions.

We study the generalization of the three-dimensional two-band Hopf insulator to the case of many bands, where all the bands are separated from each other by band gaps. The obtained Z classification of such a N -band Hopf insulator and the formulation of its bulk-boundary correspondence are our main results. We find that the quantized boundary effect can only be measured in a non-equilibrium state.

We predict and analyze mechanical instability and corresponding self-sustained mechanical oscillations occurring in a nanoelectromechanical system composed of a metallic carbon nanotube (CNT) suspended between two superconducting leads and coupled to a scanning tunneling microscope (STM) tip. We show that such phenomena are realized in the presence of both the coherent Andreev tunneling between the CNT and superconducting leads, and an incoherent single electron tunneling between the voltage biased STM tip and CNT. Treating the CNT as a single-level quantum dot, we demonstrate that the mechanical instability is controlled by the Josephson phase difference, relative position of the electron energy level, and the direction of the charge flow. It is found numerically that the emergence of the self-sustained oscillations leads to a substantial suppression of DC electric current.

The idea of nanomagnetic Boolean logic was advanced more than two decades ago. It envisaged the use of nanomagnets with two stable magnetization orientations as the primitive binary switch for implementing logic gates and ultimately combinational/sequential circuits. Enthusiastic proclamations of how nanomagnetic logic will eclipse traditional (transistor-based) logic circuits proliferated the applied physics literature. Two decades later there is not a single viable nanomagnetic logic chip in sight, let alone one that is a commercial success. In this perspective article, I offer my reasons on why this has come to pass. I present a realistic and tempered vision of nanomagnetic logic, pointing out many misconceptions about this paradigm, flaws in some proposals that appeared in the literature, shortcomings, and likely pitfalls that might stymie progress in this field.