Condensed Matter

Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material's electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a Type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 Kelvin, which has ramifications for future fabrication recipes.

Square-root topology is a recently emerged subfield describing a class of insulators and superconductors whose topological nature is only revealed upon squaring their Hamiltonians, i.e., the finite energy edge states of the starting square-root model inherit their topological features from the zero-energy edge states of a known topological insulator/superconductor present in the squared model. Focusing on one-dimensional models, we show how this concept can be generalized to 2 n -root topological insulators and superconductors, with n any positive integer, whose rules of construction are systematized here. Borrowing from graph theory, we introduce the concept of arborescence of 2 n -root topological insulators/superconductors which connects the Hamiltonian of the starting model for any n , through a series of squaring operations followed by constant energy shifts, to the Hamiltonian of the known topological insulator/superconductor, identified as the source of its topological features. Our work paves the way for an extension of 2 n -root topology to higher-dimensional systems.

We develop a generic k?�p open momentum space method for calculating the Hofstadter butterfly of both continuum (Moiré) models and tight-binding models, where the quasimomentum is directly substituted by the Landau level (LL) operators. By taking a LL cutoff (and a reciprocal lattice cutoff for continuum models), one obtains the Hofstadter butterfly with in-gap spectral flows. For continuum models such as the Moiré model for twisted bilayer graphene, our method gives a sparse Hamiltonian, making it much more efficient than existing methods. The spectral flows in the Hofstadter gaps can be understood as edge states on a momentum space boundary, from which one can determine the two integers ( t ν , s ν ) of a gap ν satisfying the Diophantine equation. The spectral flows can also be removed to obtain a clear Hofstadter butterfly. While t ν is known as the Chern number, our theory identifies s ν as a dual Chern number for the momentum space, which corresponds to a quantized Lorentz susceptibility γ xy =eB s ν .

Moiré patterns with a superlattice potential can be formed by vertically stacking two layered materials with a relative twist or lattice constant mismatch. The moiré superlattice can generate flat bands that result in new correlated insulating, superconducting, and topological states. Strong electron correlations, tunable by the fractional filling, have been observed in both graphene and transition metal dichalcogenide (TMD) based systems. In addition, in TMD based systems, the moiré potential landscape can trap interlayer excitons (IX) at specific atomic registries. Here we report that spatially isolated trapped IX in a molybdenum diselenide/tungsten diselenide heterobilayer device provide a sensitive optical probe of carrier filling in their immediate environment. By mapping the spatial positions of individual trapped IX, we are able to spectrally track the emitters as the moiré lattice is filled with excess carriers. Upon initial doping of the heterobilayer, neutral trapped IX form charged IX (IX trions) uniformly with a binding energy of ~7 meV. Upon further doping, the empty superlattice sites sequentially fill, creating a Coulomb staircase: stepwise changes in the IX trion emission energy due to Coulomb interactions with carriers at nearest neighbour moiré sites. This non-invasive, highly local technique can complement transport and non-local optical sensing techniques to characterise Coulomb interaction energies, visualise charge correlated states, or probe local disorder in a moiré superlattice.

The formation of a submicron optical cavity on one side of a metal-insulator-metal (MIM) tunneling device induces a measurable electrical current between the two metal layers with no applied voltage. Reducing the cavity thickness increases the measured current. Eight types of tests were carried out to determine whether the output could be due to experimental artifacts. All gave negative results, supporting the conclusion that the observed electrical output is genuinely produced by the device. We interpret the results as being due to the suppression of vacuum optical modes by the optical cavity on one side of the MIM device, which upsets a balance in the injection of electrons excited by zero-point fluctuations. This interpretation is in accord with observed changes in electrical output as other device parameters are varied. A feature of the MIM devices is their femtosecond-fast transport and scattering times for hot charge carriers. The fast capture in these devices is consistent with a model in which an energy {\Delta}E may be accessed from zero-point fluctuations for a time {\Delta}t, following a {\Delta}E{\Delta}t uncertainty-principle-like relation governing the process.

It is shown theoretically that circularly polarized irradiation of two-dimensional electron gas can induce the localized electron states which antiferromagnetically interact with conduction electrons, resulting in the Kondo effect. Conditions of experimental observation of the effect are discussed for modern nanostructures.

Atomically precise graphene nanoribbons are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbons (9-AGNRs) in a field-effect transistor geometry using electron beam lithography-defined graphene electrodes. This approach yields controlled electrode geometries and enables higher fabrication throughput compared to previous approaches using an electrical breakdown technique. Thermal annealing is found to be a crucial step for successful device operation resulting in electronic transport characteristics showing a strong gate dependence. Raman spectroscopy confirms the integrity of the graphene electrodes after patterning and of the GNRs after device integration. Our results demonstrate the importance of the GNR-graphene electrode interface and pave the way for GNR device integration with structurally well-defined electrodes.

Among its many uses, graphene shows significant promise for optical and optoelectronic applications. In particular, devices based on the photothermoelectric effect (PTE) in graphene can offer a strong and fast photoresponse with high signal-to-noise ratio while consuming minimal power. In this work we discuss how to optimize the performance of graphene PTE photodetectors by tuning the light confinement, device geometry, and material quality. This study should prove useful for the design of devices using the PTE in graphene, with applications including optical sensing, data communications, multi-gas sensing, and others.

We theoretically propose a gigantic orbital Edelstein effect in topological insulators and interpret the results in terms of topological surface currents. We numerically calculate the orbital Edelstein effect for a model of a three-dimensional Chern insulator as an example. Furthermore, we calculate the orbital Edelstein effect as a surface quantity using a surface Hamiltonian of a topological insulator, and numerically show that it well describes the results by direct numerical calculation. We find that the orbital Edelstein effect depends on the local crystal structure of the surface, which shows that the orbital Edelstein effect cannot be defined as a bulk quantity. We propose that Chern insulators and Z_2 topological insulators can be a platform with a large orbital Edelstein effect because current flows only along the surface. We also propose candidate topological insulators for this effect. As a result, the orbital magnetization as a response to the current is much larger in topological insulators than that in metals by many orders of magnitude.

We theoretically study the current-induced dynamics of a domain wall in a ferromagnetic nanotube by developing a theory for the orbital angular momentum of a domain wall and the current-induced torque on it. Specifically, a domain wall with nontrivial magnetization winding along the circumference is shown to possess finite orbital angular momentum, which is proportional to the product of its Skyrmion charge and position, and the current is shown to exert a torque changing the orbital angular momentum of the domain wall and thereby drives it. The current-induced torque is interpreted as the transfer of orbital angular momentum from electrons to the domain wall, which occurs due to the emergent magnetic field associated with the Skyrmion charge. Our results reveal a hitherto unrecognized utility of the orbital degree of freedom of magnetic solitons.