A. Caiafa

Parameter extraction for a power diode circuit simulator model including temperature dependent effects

Power electronics designers need accurate models of power diodes to perform simulations of the systems they are designing. The diode models should be accurate under a wide variety of operating conditions. In particular temperature dependencies should be accurately modeled. Physics-based models appear to be the best choice to meet these requirements. On the other hand, complicated parameter extraction procedures discourage use of these models by practicing engineers. In this work we explore the possibility of using a sophisticated physics-based diode model utilizing at most three parameters obtained directly or estimated from the manufacturers data sheets. In order to validate the proposed approach, several diodes with different characteristics are tested under different conditions and a wide temperature range from -150 to 150/spl deg/C. Experimental results are compared with simulations.

Cryogenic study and modeling of IGBTs

The switching characteristics (turn-on and turn-off) and forward conduction drop of trench-gate IGBTs are examined over a temperature range of -260 to 25/spl deg/C. A physics-based model previously developed is modified to incorporate appropriate physical behavior at low junction temperatures. Results from the model are compared to experimental waveforms and discrepancies are discussed.

Implementation and validation of a physics-based circuit model for IGCT with full temperature dependencies

This paper presents a physics-based Fourier solution IGCT model for circuit simulation with full temperature dependencies. Besides the external electrical characteristics, the model can also provide internal physical and electrical information of the device, such as the junction temperature, and the charge distribution. The model is shown to give good agreement with experimental waveforms and accurately predicts the device behavior under changing temperatures.

Low temperature characterization and modeling of IGBTs

The turn-off switching characteristics and breakdown voltage of both punch-through (PT) and non-punchthrough (NPT) 1GBTs are examined over a temperature range of -125 to 100/spl deg/C. A physics-based PSpice model, incorporating much of the device behavior, is also described. Results from the model are compared to experimental waveforms and good agreement is found.

Characterization and modeling of high-voltage field-stop IGBTs

The HVFS (high voltage field stop) IGBT is becoming a promising power device in high power application with the robust characteristics offered by the field stop technology, which combines the inherent advantages offered by PT (punch-through) and NPT (nonpunch-through) structures while overcoming the drawbacks of each structure. In this work an electrothermal physics-based model for the field stop IGBT is developed and validated using experimental results for a commercial 1200 V/60 A field stop IGBT over the entire temperature range specified in the data sheets. The validated model is then used to simulate a 6.5 kV field stop IGBT. The simulation results are compared with experimental results published in the literature and good agreement is obtained.

Temperature effects on trench-gate punch-through IGBTs

The switching characteristics (turn-on and turn-off) and forward conduction drop of trench-gate punch-through insulated gate bipolar transistors (IGBTs) are examined over a temperature range of from -50/spl deg/C to 125/spl deg/C. An analytical description of the forward conduction voltage drop is presented based on temperature dependencies of the appropriate physical parameters and mechanisms. A physics-based PSpice model, incorporating much of the device behavior, is also described. Results from the model are compared to experimental waveforms.

Temperature effects on IGCT performance

The integrated gate-commutated thyristor (IGCT) is an advanced semiconductor device for high frequency, high power applications. This work presents a detailed discussion of experimental dynamic characteristics of IGCTs at ambient temperatures ranging from -40/spl deg/C to 50/spl deg/C. A lumped-charge physics-based IGCT model with full temperature response is also developed in this work. A chopper circuit with an inductive load is employed to test the IGCT switching behavior both experimentally and by simulation. Comparison between the experimental and simulation results is made and discrepancies are discussed.

IGBT operation at cryogenic temperatures: non-punch-through and punch-through comparison

Detailed experimental data taken for punch through (PT) and non punch through (NPT) IGBTs are presented. The test program covered IGBT devices rated for 100-600 A and 600-1200 V from different manufacturers. The forward conduction drops and switching behavior of the IGBTs are examined over a temperature range of 4.2 to 295 K. Physical behavior at low junction temperatures is analyzed. Different behavior of the two structures at cryogenic temperatures is highlighted and the better performances of the NPT technology are shown.

Temperature effects on trench-gate IGBTs

The switching characteristics (turn-on and turn-off) and forward conduction drop of trench-gate IGBTs are examined over a temperature range of -150 to 150/spl deg/C. An analytical description of the forward conduction voltage drop is presented based on temperature dependencies of the appropriate physical parameters and mechanisms. A physics-based PSpice model, incorporating much of the device behavior, is also described. Results from the model are compared to experimental waveforms and discrepancies are discussed.

Simulation of ARCP converter with physics-based circuit simulator device models

Former simulation studies of the auxiliary resonant commutated pole (ARCP), a well-known high power soft-switching inverter, have invariably used simplified power device models, obtaining fast simulation speed, but sacrificing accuracy. In this research, we apply to the simulation of the ARCP converter physics-based IGBT and power diode models, which have been proven robust in the hard switching circuit simulation. With this approach, it is possible to obtain more detailed waveforms of the commutation process and more accurate estimation of the system losses.