X. Kang

Circuit simulator models for the diode and IGBT with full temperature dependent features

The problems faced in generating analytical models for the insulated gate bipolar transistor (IGBT) and power diode are devising correct equations and determining realistic boundary conditions, especially for two-dimensional (2-D) features, while ensuring convergence of the models. These issues are addressed in this paper in relation to the temperature dependent modeling of NPT IGBTs and diodes. Simulation and experimental results are presented and compared to validate the modeling approach.

Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models

A practical and accurate parameter extraction method is presented for the Fourier-based-solution physics-based insulated gate bipolar transistor (IGBT) and power diode models. The goal is to obtain a model accurate enough to allow switching loss prediction under a variety of operating conditions. In the first step of the extraction procedure, only one simple clamped inductive load test is needed for the extraction of the six parameters required for the diode model and of the 12 and 15 parameters required for the nonpunch-through (NPT) and punch-through (PT) IGBT models, respectively. The second part of the extraction procedure is an automated formal optimization step that refines the parameter estimation. Validation with experimental results from various structures of IGBT demonstrates the accuracy of the proposed IGBT and diode models and the robustness of the parameter extraction method.

Parameter extraction for a physics-based circuit simulator IGBT model

A practical parameter extraction method is presented for the Fourier-based-solution physics-based IGBT model. In the extraction procedure, only one simple clamped inductive load test is needed for the extraction of the eleven and thirteen parameters required for the NPT and PT IGBT models, respectively. Validation with experimental results from various structure IGBTs demonstrates the accuracy of the proposed IGBT model and the robustness of the parameter extraction method.

Parameter extraction for a power diode circuit simulator model including temperature dependent effects

Power electronics designers need accurate models of power diodes to perform simulations of the systems they are designing. The diode models should be accurate under a wide variety of operating conditions. In particular temperature dependencies should be accurately modeled. Physics-based models appear to be the best choice to meet these requirements. On the other hand, complicated parameter extraction procedures discourage use of these models by practicing engineers. In this work we explore the possibility of using a sophisticated physics-based diode model utilizing at most three parameters obtained directly or estimated from the manufacturers data sheets. In order to validate the proposed approach, several diodes with different characteristics are tested under different conditions and a wide temperature range from -150 to 150/spl deg/C. Experimental results are compared with simulations.

Physical modeling of IGBT turn on behavior

Although IGBT turn on losses can be comparable to turn off losses, IGBT turn on has not been as thoroughly studied in the literature. Under clamped inductive load condition at turn on there is strong interaction between the IGBT and the freewheeling diode undergoing reverse recovery. A physics-based IGBT model is used that has been proved accurate in the simulation of IGBT turn off. Both resistive and inductive turn on are considered. Discrepancies between model predictions and experimental results are discussed.

Low temperature characterization and modeling of IGBTs

The turn-off switching characteristics and breakdown voltage of both punch-through (PT) and non-punchthrough (NPT) 1GBTs are examined over a temperature range of -125 to 100/spl deg/C. A physics-based PSpice model, incorporating much of the device behavior, is also described. Results from the model are compared to experimental waveforms and good agreement is found.

Characterization and modeling of high-voltage field-stop IGBTs

The HVFS (high voltage field stop) IGBT is becoming a promising power device in high power application with the robust characteristics offered by the field stop technology, which combines the inherent advantages offered by PT (punch-through) and NPT (nonpunch-through) structures while overcoming the drawbacks of each structure. In this work an electrothermal physics-based model for the field stop IGBT is developed and validated using experimental results for a commercial 1200 V/60 A field stop IGBT over the entire temperature range specified in the data sheets. The validated model is then used to simulate a 6.5 kV field stop IGBT. The simulation results are compared with experimental results published in the literature and good agreement is obtained.

Temperature effects on trench-gate punch-through IGBTs

The switching characteristics (turn-on and turn-off) and forward conduction drop of trench-gate punch-through insulated gate bipolar transistors (IGBTs) are examined over a temperature range of from -50/spl deg/C to 125/spl deg/C. An analytical description of the forward conduction voltage drop is presented based on temperature dependencies of the appropriate physical parameters and mechanisms. A physics-based PSpice model, incorporating much of the device behavior, is also described. Results from the model are compared to experimental waveforms.

Characterization and modeling of the LPT CSTBT-the 5/sup th/ generation IGBT

The 5/sup th/ generation IGBT device, carrier stored trench bipolar transistor (CSTBT), has been introduced in the market. This newer generation IGBT represents the current state of the art with its excellent electrical characteristics. In this work, the physics-based electro-thermal Leturcq-Palmer IGBT model, which has been proven robust by the validation with NPT and PT IGBTs, is used to simulate the behavior of the CSTBT. The hard switching experiments have been performed using inductive and resistive loads under different temperature conditions. The simulation results from the model are compared with the experimental results under different conditions to validate the model accuracy.

The use of a formal optimisation procedure in automatic parameter extraction of power semiconductor devices

A procedure for automatic parameter extraction is outlined, based on accurate physics-based models of the diode, IGBT and associated circuitry. A formal optimisation method is used to refine initial parameter estimates, and is coupled with a hardware testing system to obtain device waveform measurements.