A. Goritz

Electromagnetic and small-signal modeling of an encapsulated RF-MEMS switch for D-band applications

In this work, an electromagnetic (EM) model and a small-signal (lumped-element) model of a wafer-level encapsulated (WLE) radio frequency microelectromechanical systems (RF-MEMS) switch is presented. The EM model of the WLE RF-MEMS switch is developed to estimate its RF performance. After the fabrication of the switch, the EM model is used to get accurate S-parameter simulation results. Alternative to the EM model, a small-signal model of the fabricated WLE RF-MEMS switch is developed. The developed model is integrated into a 0.13 µm SiGe BiCMOS process technology design kit for fast simulations and to predict the RF performance of the switch from a pure electrical point of view. The 0.13 µm SiGe BiCMOS embedded WLE RF-MEMS shows beyond state-of-the-art measured RF performances in D-band (110–170 GHz) and provides a high capacitance C on /C off ratio of 11.1. The results of the both EM model and small-signal model of the switch are in very good agreement with the S-parameter measurements in D-band. The measured maximum isolation of the WLE RF-MEMS switch is 51.6 dB at 142.8 GHz with an insertion loss of 0.65 dB.

0.13-μm SiGe BiCMOS technology with More-than-Moore modules

This paper presents three different technology modules, integrated into a 0.13-μm SiGe BiCMOS process; namely RF-MEMS switch, microfluidics and heterogeneous integration technologies. The RF-MEMS switch module is optimized for mm-wave applications and offers superior performance figures at D-band with a wafer level encapsulated packaging option. The microfluidics module which is embedded by bonding three different wafers, provides a unique platform of fluid-electronic interaction with possibility of optical observation. Finally, the FOWLP option provides the heterogeneous integration of a single or multi chips in a single package. The BiCMOS process together with the integration of all these modules offers a technology platform to follow the More-than-Moore path for multi-functional and smart systems.

Modular extension of high performance SiGe BiCMOS technologies — Following the more-than-moore path

This paper presents the modular extension of a BiCMOS technology. Three different modules, namely RF-MEMS switch, through-silicon-via (TSV) and microfluidics, are added to IHPs BiCMOS technologies. The first extension module of RF-MEMS switch adds a high-performance mechanical switch, providing unique features such as low-loss switching or high-Q tuning at mm-wave frequencies. The TSV module, which adds deep vias through the substrate (silicon), provides low-ohmic vias through the front side to back side of the silicon wafer. Using this module, the back side of the silicon chip can be used as the RF-ground. Furthermore, such vias through the substrate enables the 3D integrated packages. The last extension module, microfluidics, adds the micro-channels inside the BiCMOS chip. Such micro-channels are very promising for bio-sensing applications for THz detection. The brief technological information of each module and some design examples are also provided in this paper.

MEMS — BiCMOS monolithic integration

This paper presents various RF-MEMS technologies and devices integrated to a standard BiCMOS process. SiGe BiCMOS technology acts as the baseline process for the integration of modules increasing the functionality and by this way enlarging the spectrum for embedded system applications. Back-end-off-line (BEOL) integrated RF-MEMS switches for mm-wave applications, through silicon vias (TSVs) for RF-grounding and 3D integration and a fully BiCMOS integrated microchannel technology for microfluidic applications are discussed. This paper covers the aspects of both technology challenges and performances figures.