A. N. Buzynin

Fianite: A multipurpose electronics material

Fianite-zirconium dioxide, stabilized by yttrium (YSZ) has a unique combination of physical and chemical properties that made it a very promising material for a wide range of applications. In this work, we consider the use of fianite as a bulk substrate and buffer layer for AIIIBV epitaxy, and as an antireflection and protective coating for photo detectors and solar cells.

Heteroepitaxial III–V films on fianite substrates and buffer layers

GaAs, GaSb, AlGaAs, and InGaAs epitaxial films and multilayer AlGaAs/InGaAs/GaAs heterostructures for PHEMT field-effect transistors have been obtained on fianite substrates by metal-organic vapour phase epitaxy. Films of different III–V compounds, including GaN, were grown on Si and GaAs substrates with a simple single buffer layer (fianite) and double buffer layer (fianite on porous Si and GaAs). It is established that the use of a two-layer buffer improves the structural quality and homogeneity of III–V films. A possibility of controlling the phase composition of GaN films using a corresponding buffer layer is shown. It is found that the use of a two-layer buffer increases the electrical homogeneity and decreases the electrical activity of defects in GaN films.

Application of Elastic Mid-IR-Laser-Light Scattering for Non-Destructive Inspection in Microelectronics

Some possible applications of the low-angle mid-IR-light scattering technique and some recently developed on its basis methods for non-destructive inspection and investigation of semiconductor materials and structures are discussed in the paper. The conclusion is made that the techniques in question might be very useful for solving a large number of problems regarding defect investigations and quality monitoring both in research laboratories and the industry of microelectronics.

Epitaxial films of GeSi, AlGaN, and GaSb and GaSb/InAs superlattices on substrates of fianite

Fianite is a single crystal of cubic solid solutions based on zirconium dioxide (ZrO2) or hafnium dioxide (HfO2) with stabilizing oxides of yttrium, scandium, and lanthanides. It is characterized by a unique combination of physical and chemical properties, making it a promising material for wide use in electronics. In this work, we consider new uses of fianite as a monolith substrate for obtaining Ge, GeSi, AlGaN, and GaSb epitaxial films and GaSb/InAs superlattices.

Antireflection fianite and ZrO2 coatings for solar cells

Fianite is a promising multipurpose material for new electronic technologies owing to its unique combination of physical and chemical properties. It can be used in virtually all of the main technological stages of the production of micro-, opto-, and SHF-electronics; in particular, as a bulk dielectric substrate and a material for buffer layers in heteroepitaxy; as a material for insulating, antireflection, and protective layers in device elements; and as a gate dielectric [1–3]. In this work, we consider the possibilities for using fianite and ZrO2 as an antireflection coating for silicon solar cells (SCs) and SCs based on InGaAsP heterostructures.

Heteroepitaxial GaN films on silicon substrates with porous buffer layers

New complex buffer layers based on a porous material have been developed for epitaxial growth of GaN films on Si substrates. The characteristics of gallium nitride heteroepitaxial layers grown on silicon substrates with new buffer layers by metal-organic vapor phase epitaxy are investigated. It is shown that the porous buffer layers improve the electric homogeneity and increase the photoluminescence intensity of epitaxial GaN films on Si substrates to the values comparable with those for reference GaN films on Al2O3 substrates. It is found that a fianite layer in a complex buffer is a barrier for silicon diffusion from the substrate into a GaN film.

Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique

Heteroepitaxial GaN and GaAs films were grown by both conventional two-step MOCVD and the new “capillary epitaxy” technique on (001) and (111) fianite (YSZ) substrates. The capillary epitaxy technique was investigated for the example of GaAs films growth on a YSZ substrate. This technique allows both the reduction of the minimum thickness and the improvement of the quality of III-V films. PL spectra of undoped GaN films on YSZ were studied.

Thin single-crystal Ge layers on 2″ Si substrates

Conditions for preparing thin homogeneous mirror-smooth Ge layers on 2″ Si substrates by hot wire chemical vapor-phase deposition have been determined. Ge layers 200 nm thick have a structure of epitaxial mosaic single crystal with almost completely relaxed elastic stresses. The X-ray diffraction rocking curve half-width is less than 6′. The density of grown-in dislocations in Ge layers is in the range of (3–6) × 105 cm−2, and the rms surface roughness does not exceed 0.8 nm.

Studying the characteristics of the photosensitive elements of photodetector matrices based on Si Pt: Si by means of induced potential and transmission electron microscopy

The prospects for the combined use of scanning and transmission electron microscopy in studying defects in the matrix elements of the infrared photodetectors are considered. It is shown that combining these techniques allows us to fully realize the potential of high-voltage transmission microscopy for detecting defects that impair matrix parameters.

Growth and properties of GaAs and GaN films and low-dimensional GaAs/QWsInGaAs structures on Si substrates with a Ge buffer layer

The conditions for producing mirror-smooth Ge buffer layers of uniform size on Si(100) and Si(111) substrates by means of hot wire chemical vapor deposition (HW-CVD) at a low temperature (350°C) are determined. Single-crystal GaN and GaAs films and low-dimensional GaAs/QWInGaAs/ GaAs/QWInGaAs/GaAs/Ge/Si structures of uniform smoothness are obtained via MOVPE at reduced pressures. Their quantum wells are found to be characterized by intense photoluminescence comparable in intensity to that produced on GaAs substrates.