A. R. Hanim

An analysis of silicon waveguide phase modulation efficiency based on carrier depletion effect

This paper highlights the study of carrier depletion effect on silicon waveguide with p-i-n diode and NPN structure. The device performance is predicted by using 2D Silvaco CAD software under different applied voltages. Device performances in terms of modulation efficiency will be discussed.

Modeling And Analysis Of Lateral Doping Region Translation Variation On Optical Modulator Performance

In this paper, we design and discuss the performance of a silicon phase modulator integrated in a silicon‐on‐insulator (SOI) waveguide. The modulator employing the p‐i‐n diode structure will be working at 1.55 μm optical telecommunications wavelengths. The lateral translation of doping regions of p+ and n+ doping regions are varied, and the refractive index change, phase modulation efficiency and also the absorption loss of the modulator are investigated. Our simulation shows that moving the lateral translation of the doping regions closer to the rib waveguide sidewall, the change of the refractive index increases, resulting better modulation efficiency but experiences more absorption loss.

DESIGN AND CHARACTERIZATION OF MULTIPLE COUPLED MICRORING BASED WAVELENGTH DEMULTIPLEXER IN SILICON–ON–INSULATOR (SOI)

We report in this paper, an optimized design and characterization of SOI based single mode, four channels wavelength demultiplexer using microrings. The usage of silicon-on-insulator (SOI) allows a wide free spectral range (FSR) for the device that is crucial in developing ultra-compact integrations of planar lightwave circuits (PLCs). The characterizations are done using Finite-Difference Time-Domain (FDTD) mode simulations from RSOFT. Serially cascaded microring arrays up to the third order are presented to study the design trade-off among the FSR, Q-factor and optical losses of the laterally coupled wavelength demultiplexer. The demultiplexer is expected to be working at C-band region of Wavelength Division Multilplexing (WDM) for a wavelength around 1550 nm. Our proposed demultiplexer has low insertion loss (< 0.5 dB) and a crosstalk around 12 ~ 19 dB.

Analysis of Silicon-On-Insulator (SOI) Buried Waveguide Phase Modulator

The analyses of the simulation of a single mode buried waveguide optical phase modulator based on SOI material are here reported. The structure has been simulated by Athena from Silvaco simulation package. The buried waveguide is created by doping phosphorus with concentration of 10e15 cm-3 into the substrate. The real refractive index and the absorption coefficient of the waveguide are changed using the free carrier dispersion effect via carrier injection of a pn junction. The efficiency, VπLπ is calculated and the performance is compared with that of the rib waveguide optical phase modulator of the same material and dimensions. Simulation shows that the device can be an efficient device for application in intensity modulation.

Process Modeling, Optimization and Characterization of Silicon Optical Waveguides by Anisotropic Wet Etching

We present a detailed fabrication process of silicon optical waveguide with a depth of 4μm via simulation and experiment. An anisotropic wet etching using Potassium Hydroxide (KOH) solutions was selected to study the influence of major fabrication parameters such as etch rate, oxidation time and development time to the fabrication performance. The fabrication of the silicon waveguide with the orientation of was modeled using ATHENA from 2D Silvaco software and was later compared with the actual fabricated device. Etching time of 4 minutes was required to etch the Si to the depth of 4μm to obtain a perfectly trapeizoidal optical waveguide structure. Our results show that the simulation model is trustworthy to predict the performance of the practical anisotropic wet etching fabrication process. The silicon-based waveguide components are targeted to be employed in realizing future photonic devices such as optical modulators.

Performance of the Active Microring Resonator Based on SOI Rib Waveguide

Micro-ring resonator based on silicon-on-insulator (SOI) has been extensively studied due to its many advantages, thus promising to improve the optoelectronic integrated circuit performance. This paper highlights the study of the free carrier injection effect on the silicon rib waveguide with p-i-n diode structure integrated in the SOI micro-ring resonator. The free carrier concentrations have been modulated by the electrical signal that can cause change of refractive index of the micro-ring resonator. The device performances are predicted by using numerical modelling software 2D SILVACO and Finite Difference Time Domain method simulation software RSOFT. The results show the change of refractive index is maximized at a greater applied voltage. A shift in resonant wavelength of around 6.7 nm was predicted at 0.9V with 1.14x10-3 refractive index change. It is also shown that 8.5dB change of the output response obtained through the output.

Active SOI Optical Ring Resonator Based on Free Carrier Injection

This paper highlights the study of the free carrier injection effect on the active SOI optical ring resonator. The effect of the free carrier injection on optical ring resonator was evaluated by varying the p+ and n+ doping concentrations. The device performances are predicted by using numerical modelling software of the 2D SILVACO and Finite Difference Time Domain method simulation software RSOFT. The results show the refractive index change increases as the p+ and n+ doping concentrations is getting higher. A shift in resonant wavelength of around 2 nm was predicted at 5x1019 cm3 p+ and n+ doping concentrations with 5.8x10-3 refractive index change. It is also shown that 8.2dB change of the output response obtained through the output.

Plasma Dispersion Effect for Various Doping Configuration on the SOI Phase Modulator with Trapezoidal Rib Waveguide

Silicon-on-insulator (SOI) is becoming more attractive as a photonic material for photonic integrated circuits (PLC) because of its unique features. In this paper, we modeled and simulated the performance of the SOI phase modulator with various doping configuration based on the plasma dispersion effect. The effect of the free injected carrier in the region of the propagating optical mode have been investigated at the optical wavelength of 1.55µm. The proposed device have been integrated in the SOI rib waveguide with trapezoidal cross section structure and four different doping configurations have been chosen which are the n+p+n+, p+n+p+, n+n+p+ and the p+p+n+. Our results show that the n+n+p+ configuration possessed the best modulation efficiency of 0.026V.cm and gained the smallest absorption loss of 1.1dB at 0.95V applied voltage.

Performance of Optical Wavelength Demultiplexer based on Silicon- on-Insulator (SOI) Microring Resonators (MRRs)

In this paper, we presented the performance analysis of Silicon- on- Insulator (SOI) based, four channels optical wavelength demultiplexer using microrings. The characterizations are done employing Finite- Difference Time- Domain (FDTD) mode simulations from RSOFT. Serially cascaded microring arrays up to the third order are demonstrated to discuss the design issues of the laterally coupled wavelength demultiplexer. Characteristics like the Free Spectral Range (FSR), crosstalk and insertion loss losses are studied.

2x2 Optical Switch Based on Silicon-on-Insulator Microring Resonator

In near future, silicon-on-insulator (SOI) microring resonator are expected to be basic components for wavelength filtering and switching due to their compact size and wide free spectral range (FSR). In this paper, a 2X2 optical switch by using active microring resonator is proposed. The switch is consists of second order serially cascaded microring coupled to a pair of waveguide. The ON/OFF state of the design is control by electric signal which will vary the refractive index. The device is design to operate at 1.55µm wavelength. With a 500nm x 200nm rib dimensions, the design is proven to have single mode behaviour. Finite-Difference Time-Domain (FDTD) method simulation by RSOFT software is use to characterize the device performance. The results show that the 2X2 optical switch proposed can be an efficient device to be functioning in WDM application.