A. R. Rae

InGaAs Quantum-Dot Mode-Locked Laser Diodes

This paper presents a selection of recent advances on two-section passively mode-locked InGaAs-based quantum-dot laser diodes. Pulse generation is demonstrated for repetition rates ranging from 310 MHz to 240 GHz, and with pulse durations ranging from the picosecond to the sub-400 fs regime. Mode-locking trends in these devices are discussed, and device performance improvements in terms of pulse duration, output power, and noise properties are presented. Design rules for reducing the pulse duration, increasing the output power, and improving noise performance are outlined. Implementation of tapered waveguide structures yields significant performance improvements, allowing the simultaneous achievement of ultrashort, Fourier-limited pulse generation with low amplitude noise, low timing jitter, and narrow RF linewidths.

Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers

Ultrashort pulse, high-power mode locking is demonstrated in InGaAs quantum dot lasers using a flared waveguide laser incorporating a narrow waveguide sections acting as both a mode filter and saturable absorber. 24GHz mode locking with 780fs pulses and 500mW peak powers are demonstrated at an emissions wavelength of 1.3μm.

Harmonic Mode-Locking of a Quantum-Dot Laser Diode

A detailed study of harmonic mode-locking in a quantum-dot laser diode is presented. Mode-locking of the 1^st, 2^nd, 3^rd and 6^th harmonics are demonstrated, corresponding to repetition rates ranging from 39 GHz to 238 GHz

Absorber length optimisation for sub-picosecond pulse generation and ultra-low jitter performance in passively mode-locked 1.3 /spl mu/m quantum-dot laser diodes

Through absorber length optimisation, sub-picosecond pulse generation and ultra-low timing jitter are demonstrated in a 20 GHz passive mode-locked quantum-dot laser diode. Pulsewidths as low as 796 fs and timing jitter performance of 390 fs (20 kHz-50 MHz) are achieved

InGaAs–GaAs Quantum-Dot Mode-Locked Laser Diodes: Optimization of the Laser Geometry for Subpicosecond Pulse Generation

The effect of cavity geometry on both pulsewidth and pulse output power is systematically investigated for a monolithic mode-locked quantum-dot laser diode. Subpicosecond pulse generation is demonstrated, and trends in pulsewidth and pulse output power are correlated to the ratio of the gain-to-absorber section lengths. A three-fold reduction in the pulsewidth, from 2.3 ps to 800 fs, is observed for a change in the gain-to-absorber section length ratio of 14 : 1 to 3 : 1. In addition, an associated five-fold increase in average power and 14-fold increase in peak power are also observed.

Dynamic simulation of mode-locked quantum-dot lasers

A dynamic model of passive mode-locking in quantum-dot laser diodes is presented. It is found that in contrast with quantum-well lasers, rapid gain recovery is key for mode-locking of quantum-dot lasers.

Monolithic Hybrid and Passive Mode-Locked 40GHz Quantum Dot Laser Diodes

For the first time hybrid and passive mode-locking jitter performance is investigated in 40GHz quantum-dot mode-locked lasers. Record low passive mode-locking jitter of 219fs is presented, along with promising hybrid mode-locking results of 124fs.

Dynamic Switching of a 10GHz Quantum Dot Mode-Locked Laser using an Integrated Quantum Dot Switch

The performance of an integrated quantum dot switch, exhibiting on-chip gain in excess of 15 dB and saturation powers in excess of 12 dBm for both through and cross configurations, is presented. The device allows for the processing of picosecond pulses generated by a QD mode-locked

Absorber length optimisation for sub-picosecond pulse generation in passively mode-locked 1.3μm quantum dot laser diodes

Through absorber length optimisation, sub-picosecond pulse generation and low timing jitter are demonstrated in a 20GHz passively mode-locked quantum-dot laser diode. Pulse-widths as low as 800fs and timing jitter performance of 390fs (20kHz-50MHz) are achieved.