A. T. S. Wee

Comparison of nitrogen compositions in the as-grown GaNxAs1−x on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy

High-resolution x-ray diffraction (HRXRD) and secondary-ion mass spectroscopy were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that N compositions measured by the two methods agree well at lower N compositions (x 3%). The HRXRD measurement by using Vegard’s law to extract the lattice constant of GaNAs, underestimates N composition at larger N compositions. We found that the underestimation is up to 14.3% at the x=4.2%. In order to explain the deviation, a model for analyzing the correlation between lattice parameters and point defects in the epilayer was carried out.

Control of transient enhanced diffusion of boron after laser thermal processing of preamorphized silicon

In this article we report the role of excess interstitials in the end-of-range region in transient enhanced diffusion of boron during annealing of laser-processed samples. The results show that although the amorphous layer in preamorphized silicon can be completely annealed by laser irradiation, the end-of-range damages were not sufficiently annealed. The end-of-range region contains a supersaturation of interstitial defects that enhance the diffusion of boron during a post-laser processing anneal. It is found that the transient enhanced diffusion is significantly suppressed when the melt depth is extended beyond the amorphous layer such that the interstitial dose in the region adjacent to the laser-melted layer is minimized. In this way, the abruptness of laser-processed ultrashallow junctions can be maintained upon further annealing at moderately high temperatures. Cross-sectional transmission electron microscopy shows that a virtually defect-free regrown layer is obtained by overmelting beyond the amor...

Laser-induced amorphization of silicon during pulsed-laser irradiation of TiN/Ti/polycrystalline silicon/SiO2/silicon

In this letter, we report on the complex solidification structures formed during laser irradiation of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack. Due to enhanced optical coupling, the titanium nitride/titanium capping layer increases the melt depth of polycrystalline silicon by more than a factor of 2. It is found that the titanium atoms diffuse through the entire polycrystalline silicon layer during irradiation. Contrary to the expected polycrystalline silicon growth, distinct regions of polycrystalline and amorphous silicon are formed instead. Possible mechanisms for the formation of these microstructures are proposed.

Photoelectron emission and Raman scattering studies of nitrogenated tetrahedral amorphous carbon films

Nitrogenated tetrahedral amorphous carbon (N:ta-C) films prepared by the filtered cathodic vacuum arc technique were studied by x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, spectroscopic ellipsometry, ultraviolet photoelectron spectroscopy and temperature dependent resistance measurement. As the nitrogen flow rate varies from 0 to 20 sccm, the nitrogen content in the deposited film increases from 0 to 4.6 at.u200a%. Curve fitting of the C 1s and N 1s XPS spectra shows that the C–C sp3 fraction decreases with an increase in nitrogen content and that the nitrogen atoms are mainly bonded in sp2 C–N bonds. The pure ta-C film has a work function of 4.35 eV and the N:ta-C films have a value around 4.55 eV. With an increase in nitrogen flow rate, the intensity ratio of the D peak to the G peak, ID/IG increases monotonously from 0.44 to 1.25 and the G peak width decreases from 220 to 199 cm−1. The Tauc optical band gap decreases from 2.2 to 1.8 eV.

Possible complete miscibility of (BN)(x)(C-2)(1-x) alloys

The stabilities of

STUDY OF COPPER DIFFUSION INTO TANTALUM AND TANTALUM DIFFUSION INTO COPPER

(mathrm{BN}{)}_{x}({mathrm{C}}_{2}{)}_{1ensuremath{-}x}

Growth mechanisms in thin film epitaxy of Si/SiGe from hydrides

alloys and related superlattices are investigated by ab initio pseudopotential calculations. We find that the

SIMS backside depth profiling of ultrashallow implants using silicon‐on‐insulator substrates

(mathrm{BN}{)}_{1}/({mathrm{C}}_{2}{)}_{1}

Infrared reflection investigation of ion‐implanted and post‐implantation‐annealed epitaxially grown 6H‐SiC

superlattices in (111) orientations have the lowest formation energy among many short-range ordered

Low-energy electron diffraction study of oxygen-induced reconstructions on Cu(210)

{mathrm{BNC}}_{2}