A. Tan

Tailoring the topology of an artificial magnetic skyrmion

Despite theoretical predictions, it remains an experimental challenge to realize an artificial magnetic skyrmion whose topology can be well controlled and tailored so that its topological effect can be revealed explicitly in a deformation of the spin textures. Here we report epitaxial magnetic thin films in which an artificial skyrmion is created by embedding a magnetic vortex into an out-of-plane aligned spin environment. By changing the relative orientation between the central vortex core polarity and the surrounding out-of-plane spins, we are able to control and tailor the system between two skyrmion topological states. An in-plane magnetic field is used to annihilate the skyrmion core by converting the central vortex state into a single domain state. Our result shows distinct annihilation behaviour of the skyrmion core for the two different skyrmion states, suggesting a topological effect of the magnetic skyrmions in the core annihilation process.

Design of a vector magnet for the measurements of anisotropic magnetoresistance and rotational magneto-optic Kerr effect

A vector magnet is designed and assembled with two electromagnets to produce a rotational magnetic field in any direction within a plane. This design allows a rotation of the magnetic field without a mechanical rotation of the magnets. The fast speed of the field rotation (~10 s for a complete 360° rotation) and the stability against mechanical vibration easily overcome the slow drifting effect in anisotropic magnetoresistance (AMR) and rotational magneto-optic Kerr effect (ROTMOKE) measurements. As an example we applied this vector magnet to carry out AMR and ROTMOKE measurements on epitaxial growth of Fe(10 nm)∕MgO(001) films. The result demonstrates the stability and high quality of the vector magnet in determining the magnetic anisotropy of magnetic thin films using AMR and ROTMOKE techniques.

Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2

We report on the stabilization of the ferroelectric phase in Hf0.8Zr0.2O2 with a tungsten capping layer. Ferroelectricity is obtained in both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors with highly-doped Si serving as the bottom electrode in the MIS structure. Ferroelectricity is confirmed from both the electrical polarization-voltage (P-V) measurement and X-Ray Diffraction analysis that shows the presence of an orthorhombic phase. High-resolution Transmission Electron Microscopy and Energy Dispersive X-ray spectroscopy show minimal diffusion of W into the underlying Hf0.8Zr0.2O2 after the crystallization anneal. This is in contrast to significant Ti and N diffusion observed in ferroelectric HfxZr1-xO2 commonly capped with TiN.

Electrical switching of the magnetic vortex circulation in artificial multiferroic structure of Co/Cu/PMN-PT(011)

Co films and micron sized disks were grown on top of piezoelectric PMN-PT(011) and Cu/PMN-PT(001) substrates and investigated by the Magneto-Optic Kerr Effect and Photoemission Electron Microscopy. By applying an electric field in the surface normal direction, we find that the strain of the ferroelectric PMN-PT(011) substrate induces an in-plane uniaxial magnetic anisotropy in the Co overlayer. Under specific conditions, the Co magnetic vortex could be switched between clockwise and counter-clockwise circulations. The variations of the Co vortex switching were attributed to the variations of the ferroelectric domains under the Co disks. We speculate that the switching of the magnetic vortex circulation is a dynamical process which may involve pulses of appropriate magnitude and duration of the uniaxial magnetic anisotropy delivered to the magnetic vortex.

Stabilizing a magnetic vortex/antivortex array in single crystalline Fe/Ag(001) microstructures

While a magnetic antivortex state can be created in ring structures, much effort has been devoted to stabilizing a magnetic antivortex as the ground state in a single island. Among many proposals, less attention has been paid to the role of magnetocrystalline anisotropy because most magnetic microstructures are made of polycrystalline materials. By patterning epitaxial Fe/Ag(001) films along different in-plane directions, we show that the Fe magnetocrystalline anisotropy plays a very important role in stabilizing different types of vortex/antivortex states. In particular, we find that an Fe island in the shape of an elongated hexagon favors vortex array formation when the long edge is parallel to the Fe easy magnetization axis, and favors the vortex-antivortex array formation when the long edge is parallel to the Fe hard magnetization axis.

Element-specific study of epitaxial NiO/Ag/CoO/Fe films grown on vicinal Ag(001) using photoemission electron microscopy

NiO/Ag/CoO/Fe single crystalline films are grown epitaxially on a vicinal Ag(001) substrate using molecular beam epitaxy and investigated by photoemission electron microscopy. We find that after zero-field cooling, the in-plane Fe magnetization switches from parallel to perpendicular direction of the atomic steps of the vicinal surface at thinner CoO thickness but remains in its original direction parallel to the steps at thicker CoO thickness. CoO and NiO domain imaging result shows that both CoO/Fe and NiO/CoO spins are perpendicularly coupled, suggesting that the Fe magnetization switching may be associated with the rotatable-frozen spin transition of the CoO film.

Tailoring the magnetic anisotropy of Py/Ni bilayer films using well aligned atomic steps on Cu(001)

Tailoring the spin orientation at the atomic scale has been a key task in spintronics technology. While controlling the out-of-plane to in-plane spin orientation has been achieved by a precise control of the perpendicular magnetic anisotropy at atomic layer thickness level, a design and control of the in-plane magnetic anisotropy has not yet been well developed. On well aligned atomic steps of a 6° vicinal Cu(001) surface with steps parallel to the [110] axis, we grow Py/Ni overlayer films epitaxially to permit a systematic exploration of the step-induced in-plane magnetic anisotropy as a function of both the Py and the Ni film thicknesses. We found that the atomic steps from the vicinal Cu(001) induce an in-plane uniaxial magnetic anisotropy that favors both Py and Ni magnetizations perpendicular to the steps, opposite to the behavior of Co on vicinal Cu(001). In addition, thickness-dependent study shows that the Ni films exhibit different magnetic anisotropy below and above ~6 ML Ni thickness.

Imprinting antivortex states from ferromagnetic Fe into antiferromagnetic NiO in epitaxial NiO/Fe/Ag(001) microstructures

Magnetic vortex and antivortex are the two basic topological states in magnetic systems. While the ferromagnetic (FM) vortex state can be formed spontaneously and be imprinted into an antiferromagnetic (AFM) layer in AFM/FM disks, the antivortex state has never been realized in AFM films. By fabricating single crystalline NiO/Fe/Ag(001) microstructures, we show that the magnetic antivortex state can be created in the Fe microstructures and imprinted into the AFM NiO layer.

Ferroelectricity in HfO 2 thin films as a function of Zr doping

We have studied the effect of Zr doping, from 0% to 100%, on the ferroelectric properties of HfO<inf>2</inf>. Amorphous Hf<inf>x</inf>Zr<inf>1−x</inf>O<inf>2</inf> on TiN and Si substrates is deposited using atomic layer deposition (ALD) and then annealed in a rapid thermal processing (RTP) tool while capped by 20 nm of sputtered TiN. Based on our experiments, Zr doping of up to 50% results in ferroelectricity in polycrystalline Hf<inf>x</inf>Zr<inf>1−x</inf>O<inf>2</inf>, whereas Zr doping of 70% and above shows antiferroelectricity. Our results show how the properties of ferroelectric HfO<inf>2</inf> can be engineered through changing doping and annealing conditions, thereby demonstrating the flexibility of ferroelectric HfO<inf>2</inf> for integration in future memory and logic devices.