A. Tate

An InGaAs/InP HBT differential transimpedance amplifier with 47 GHz bandwidth

In this paper, we describe an InGaAs/InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-ohms.

Submicron InP D-HBT single-stage distributed amplifier with 17 dB gain and over 110 GHz bandwidth

High-performance and compact distributed amplifiers were realized in a 0.5 mum emitter double-heterojunction InGaAs/InP HBT (D-HBT) technology with a current gain cutoff frequency (fT) and a maximum oscillation frequency (fmax) of 337 and 345 GHz, respectively. A gain of 17 dB with flatness within 1.5 dB was obtained from 45 MHz up to 110 GHz, the highest available measurement frequency. The measured input and output reflection of the amplifier are better than - 10 dB up to respectively 100 and 110 GHz. The resulting gain bandwidth product (GBW) is more than 750 GHz which is the highest reported so far for any single-stage amplifiers to our knowledge

Integrated DFB-DBR laser modulator grown by selective area metalorganic vapor phase epitaxy growth technique

Abstract A device quality of selective epitaxy growth of InGaAsP/InP multiple quantum well (MQW) structure using low-pressure metalorganic vapor phase epitaxy (MOVPE) technique is described. The technique is applied to a monolithically integrated electroabsorption modulator with distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers. Superior device characteristics such as efficient modulation, low threshold current and high efficiency operation of the integrated devices are obtained.

Manufacturable monolithically integrated InP dual-port coherent receiver for 100G PDM-QPSK applications

We developed a single-chip InP coherent receiver for detection of PDM-QPSK signals, which meets specifications for 100G between 1530 and 1570 nm. Integration includes a mode converter for efficient coupling from an SMF array.

Novel integration technique for silicon/III-V hybrid laser

Integrated semiconductor lasers on silicon are one of the most crucial devices to enable low-cost silicon photonic integrated circuits for high-bandwidth optic communications and interconnects. While optical amplifiers and lasers are typically realized in III-V waveguide structures, it is beneficial to have an integration approach which allows flexible and efficient coupling of light between III-V gain media and silicon waveguides. In this paper, we propose and demonstrate a novel fabrication technique and associated transition structure to realize integrated lasers without the constraints of other critical processing parameters such as the starting silicon layer thicknesses. This technique employs epitaxial growth of silicon in a pre-defined trench with taper structures. We fabricate and demonstrate a long-cavity hybrid laser with a narrow linewidth of 130 kHz and an output power of 1.5 mW using the proposed technique.

High-power submicron InP D-HBT push-push oscillators operating up to 215 GHz

High-performance and compact push-push oscillators operating up to 215 GHz were realized in a 0.5 /spl mu/m emitter double-heterojunction InGaAs/InP HBT (D-HBT) technology with maximum oscillation frequency f/sub max/ of 220 GHz and Vbceo>5V. Two different push-push topologies, each based on a differential Collpitt oscillators topology, were investigated. Taking the push-push output from the virtual ground at the base-resonator resulted in -8 dBm output power at 184 GHz while about -15...-10 dBm was obtained at 215 GHz by reducing the electrical length of the base resonator. A high-power second harmonic signal of more then 0 dBm was obtained at 184 GHz by directly combining the differential output signal at the collector nodes of the Colpitts oscillator. These oscillators are to our knowledge the highest frequency three-terminal device based sources reported in literature.

Self-heating of submicrometer InP-InGaAs DHBTs

We studied the thermal properties of submicron InP-InGaAs-InP double heterojunction bipolar transistors (DHBTs) with emitter dimensions of A = 0.25 /spl times/ 4 /spl mu/m/sup 2/. From the temperature dependence of V/sub bc/, we measured a thermal resistance of R/sub th/ = 3.3 /spl deg/C/mW for DHBTs with ion-implanted n+-InP subcollector at room temperature, compared to a high R/sub th/ = 7.5 /spl deg/C/mW from DHBTs with conventional grown InGaAs subcollector. Two-dimensional device simulations confirm the measured results.

High-performance and high-uniformity InP/InGaAs/InP DHBT technology for high-speed optical communication systems

Recently, InP/InGaAs/InP double-heterostructure bipolar transistors (DHBT) have attracted a lot of attention in the realization of high-speed (>40 Gb/s) optical communication systems (G. Raghaven et al., IEEE Spectrum, Oct. 2000; Y. Baeyens et al, IEEE GaAs IC Symp. Tech. Dig., pp. 125-128, 2001; Y.K. Chen et al., IEDM Tech. Dig., 2001, and OFC Tech. Dig., 2002). Much progress has been made to improve the high-speed device performance and f/sub T/ values as high as 340 GHz have been reported (S. Lee et al, IEEE GaAs IC Symp. Tech. Dig., pp. 185-187, 2001; A. Fujihara et al., IEDM Tech. Dig., 2001; M. Ida et al., ibid., 2001.). However to our knowledge there have been few reports on the reproducibility, yield and robustness of these types of devices. For successful implementation of these devices in high speed ICs, in addition to high f/sub T/ and f/sub max/, a useful DHBT technology also needs to achieve low turn-on voltage V/sub ce,sat/, low knee voltage V/sub k/, high breakdown voltages BVCEO, BVCBO, and on-state breakdown voltage. Furthermore, excellent device yield, high circuit-performance and uniformity are required. Optimization of all these parameters is critical for any given technology to be practically useful. In this paper, we report on a high-yield, high performance InP/InGaAs DHBT process with excellent uniformity and reproducibility.

High speed integrated InP photonic digital-to-analog converter

We demonstrate an InP-based photonic integrated circuit for high-speed digital-to-analog (DAC) conversion. We obtained a single-tone spurious-free dynamic range (SFDR) of 32 dB with 4 control bits at 12.5 Gsample/s

InP Single-Ended Transimpedance Amplifier with 92-GHz Transimpedance Bandwidth

A single-ended InP transimpedance amplifier (TIA) for next generation high-bandwidth optical fiber communication systems is presented. The TIA exhibits 48 dB-Omega transimpedance and has a 3-dB bandwidth of 92 GHz. The input-referred current noise is 20 pA/radicHz and the transimpedance group delay is below 10 ps over the entire measured frequency range.