Vincent Houtsma

InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave transceivers

The combination of device speed (f/sub T/, f/sub max/>150 GHz) and breakdown voltage (V/sup bcco/ of about 10 V), makes the double heterojunction InP-based HBT (D-HBT), a very attractive technology to implement the most demanding analog functions of 40 Gb/s transceivers. This is illustrated by the performance of a number of InP D-HBT circuits including millimeter-wave low phase-noise VCOs up to 146 GHz, low jitter 40 Gb/s limiting amplifiers, a 40 Gb/s driver amplifier with 4.5 V differential output swing and distributed pre-amplifiers with up to 1.4 THz gain-bandwidth.

Monolithic InP Dual-Polarization and Dual-Quadrature Coherent Receiver

We realized a monolithic dual-polarization dual-quadrature coherent receiver with balanced detection on InP using a single epitaxial step. It monolithically integrates the polarization splitters, 90° hybrids, and balanced photodiodes in 4.1 mm2 . We demonstrate reception of 112-Gb/s polarization-division-multiplexed quadrature phase-shift keying with 17.3-dB optical signal-to-noise ratio at 10-3 bit-error rate.

An InGaAs/InP HBT differential transimpedance amplifier with 47 GHz bandwidth

In this paper, we describe an InGaAs/InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-ohms.

Submicron InP D-HBT single-stage distributed amplifier with 17 dB gain and over 110 GHz bandwidth

High-performance and compact distributed amplifiers were realized in a 0.5 mum emitter double-heterojunction InGaAs/InP HBT (D-HBT) technology with a current gain cutoff frequency (fT) and a maximum oscillation frequency (fmax) of 337 and 345 GHz, respectively. A gain of 17 dB with flatness within 1.5 dB was obtained from 45 MHz up to 110 GHz, the highest available measurement frequency. The measured input and output reflection of the amplifier are better than - 10 dB up to respectively 100 and 110 GHz. The resulting gain bandwidth product (GBW) is more than 750 GHz which is the highest reported so far for any single-stage amplifiers to our knowledge

Manufacturable monolithically integrated InP dual-port coherent receiver for 100G PDM-QPSK applications

We developed a single-chip InP coherent receiver for detection of PDM-QPSK signals, which meets specifications for 100G between 1530 and 1570 nm. Integration includes a mode converter for efficient coupling from an SMF array.

40-Gb/s TDM-PON over 42 km with 64-way power split using a binary direct detection receiver

We demonstrate a 40-Gbps TDM-PON over a 42-km, 64-split fiber plant using optical duobinary modulation. Experimental results show that our architecture supports 31 dB of power budget for a differential reach of 26 km at 1550 nm without DSP.

Demonstration of symmetrical 25 Gbps TDM-PON with 31.5 dB optical power budget using only 10 Gbps optical components

First demonstration of symmetrical 25-Gbps TDM-PON with 31.5-dB class N2 power-budget over 0-20 km at 1556-nm using only 10-Gbps optical components. EDFAs are used as booster and preamplifier at the OLT. Low-cost dispersion compensating schemes are applied to increase reach.

Demonstration of 40-Gb/s TDM-PON Over 42-km With 31 dB Optical Power Budget Using an APD-Based Receiver

We demonstrated a 40-Gb/s TDM-PON over a 42-km, 64-split fiber plant using optical duobinary modulation. In the ONU, a 25 Gb/s APD-based receiver was used for a cost-effective and low-power-consumption upgrade of TDM-PON. Experimental results show that our system supports 31 dB of power budget for a differential reach of 26 km at 1550 nm without DSP. Results of simulations to investigate optimization of the transmission performance are also presented.

Symmetrical 25-Gb/s TDM-PON With 31.5-dB Optical Power Budget Using Only Off-the-Shelf 10-Gb/s Optical Components

Increasing the serial bitrate beyond 10 Gb/s in time division multiplexed passive optical network (TDM-PON) is difficult. The reduced chromatic dispersion tolerance and the reduced signal-to-noise ratios at higher rates make it much more challenging to achieve the needed optical power budget, especially in a cost-effective way. To combat these challenges, we investigated and demonstrated a 25-Gb/s TDM-PON, with optical amplification at the optical line termination (OLT), based on PAM-4 modulation in the downstream and Duobinary modulation in the upstream. Described in this paper is a first demonstration of a symmetrical 25-Gb/s TDM-PON with 31.5-dB class N2 power budget over 0-20 km at 1556 nm using only cost-effective off-the-shelf 10-Gb/s optical components at the ONU and OLT side. We used small form factor erbium doped fiber amplifiers as booster and preamplifier at the OLT. We also applied low-cost dispersion compensating schemes to increase chromatic dispersion tolerance, a simple predistortion scheme based on optimization of electroabsorption modulated laser bias voltage and a simple fiber dispersion supported transmission scheme. We obtained a power budget of 31.5 dB with 0-20 km of standard single mode fiber, which we doubled to 0-40 km using dispersion compensating fiber at 1556 nm (BER = 10 -3).

High-power submicron InP D-HBT push-push oscillators operating up to 215 GHz

High-performance and compact push-push oscillators operating up to 215 GHz were realized in a 0.5 /spl mu/m emitter double-heterojunction InGaAs/InP HBT (D-HBT) technology with maximum oscillation frequency f/sub max/ of 220 GHz and Vbceo>5V. Two different push-push topologies, each based on a differential Collpitt oscillators topology, were investigated. Taking the push-push output from the virtual ground at the base-resonator resulted in -8 dBm output power at 184 GHz while about -15...-10 dBm was obtained at 215 GHz by reducing the electrical length of the base resonator. A high-power second harmonic signal of more then 0 dBm was obtained at 184 GHz by directly combining the differential output signal at the collector nodes of the Colpitts oscillator. These oscillators are to our knowledge the highest frequency three-terminal device based sources reported in literature.